直拉 的英文怎麼說

中文拼音 [zhí]
直拉 英文
straight pull
  • : Ⅰ形容詞1 (成直線的; 硬挺的) straight; stiff 2 (跟地面垂直的; 從上到下的; 從前到后的) erect; v...
  • : 拉構詞成分。
  1. He pulled out his frill as far as his navel.

    他把他的皺邊一直拉到肚臍上。
  2. Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices

    液封直拉法砷化鎵單晶及切割片
  3. Drawing smooth pearly silk stockings on her legs and up her thighs to the garters gave natalie a very queer feeling.

    娜塔麗在把平滑的,珠母似的絲襪上她的雙腿,一直拉到大腿上的吊襪帶的時候,一種難以名狀的感覺湧上心頭。
  4. Do i have to lug those suitcases all the way to the station ?

    難道非要我把那些手提箱一直拉到車站去嗎?
  5. Especially fatigued because of the wandering propensity which had seized him in the morning, he now half dragged his wet feet, shuffling the soles upon the sidewalk. an old, thin coat was turned up about his red ears - his cracked derby hat was pulled down until it turned them outward

    一件單薄的舊上衣直拉到他凍得發紅的耳朵邊,破爛的圓頂禮帽得低低的,把耳朵都給壓翻了過來。
  6. She cried exultantly, as they stood up, catching her mother s hands and standing erect, facing her in the twilight, conscious of a strangely sweet equality between them

    兩人站了起來,露絲站得筆住媽媽的雙手,在微光裏面對著她,意識到跟她之間的一種甜蜜的平等關系,歡喜得哭了起來。
  7. Standard test method for flatwise tensile strength of sandwich constructions

    夾層結構平直拉伸強度的標準試驗方法
  8. The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing, at reasonable cost, large diameter semi - insulating gaas has a use in the production of gaas integrated circuits, and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal

    目前,液封直拉技術生長gaas單晶獲得了廣泛關注,因為它能夠以合理的成本生產大徑的半絕緣單晶。半絕緣材料是生產集成電路等微電子器件的良好材料,而這種應用就要求整個晶片具有很高的均勻性。
  9. Plastics based sandwich structures. perpendicular tensile test

    塑料基夾層結構.垂直拉力試驗
  10. Some facilities and processed are adopted during this modification, such as continuous taper control mould, leaf - spring guide vibrator, withdrawal se straightening machine and automatic torch cutter

    改造中採用了連續錐度結晶器、板簧導向振動裝置、連續矯直拉矯機、自動火焰切割機等設備與技術措施。
  11. The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )

    普通直拉硅氧沉澱在低溫750形核,重摻as硅單晶形核溫度較高,在750 - 900之間。
  12. Yg832 elctronic multifunctional stretcher used for testing indexes of woven fabric, knitted fabric and non - woven fabric. these indexes include breakage, tear, peel, extension, elasticity and various hose stretch, etc

    Yg832型電子多功能伸儀,用於針織物、機織物(含非機織物)的斷裂、撕破、剝落、伸長率、彈性回復率及各類襪品的橫直拉等指標的測定。
  13. The advance of research on oxygen precipitates in ncz silicon

    摻氮直拉單晶硅中氧沉澱的研究進展
  14. Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100. in nitrogen atmosphere, more defects were induced in fast neutron irradiated czsi than in argon atmosphere

    不同氣氛下快中子輻照直拉硅中缺陷形成的差異很大, 1100的高溫退火中,與氬氣氛相比,氮氣氛退火樣品中出現了更多缺陷。
  15. In this paper, the author demonstrated the basic principle, development history and characters of high - press liquid - enveloped czochralski method ( leg ), and its application in producing the gap semi - conductors, at the same time of introducing the general situation of them

    本文論述了高壓液封直拉法的基本原理、發展歷史、特點,該法在半導體材料行業的應用及應用中的影響因素,化合物半導體材料磷化鎵的概況、高壓液封直拉法在制備該材料時的應用。
  16. Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits, and it has become one of major materials in information industry

    液封直拉法生產的半絕緣砷化鎵單晶( lecsi - gaas )被廣泛用於微波器件和高頻集成電路的襯底材料,成為當代信息產業的重要材料之一。
  17. Looking at me, the sheet up to her eyes, spanish, smelling herself, when i was fixing the links in my cuffs

    當我扣著袖口上的鏈扣的時候,她把被單一直拉到眼睛底下望著我,一派西班牙風韻,並聞著自己的體臭。
  18. Abstract : this paper analysed the kinematic properties of ball joint hi nged on the piston rod and steering drag link of a separated assistant steering m echanism, and the equations of the path and mathematical model of pressure angle were established

    文摘:分析了分置式轉向助力機構的液壓缸活塞桿與轉向直拉桿相鉸接的球頭銷的運動特性,建立了其軌跡方程及壓力角的數學模型。
  19. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示,對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝,應用於重摻硼樣品時沒有潔凈區形成,所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片,硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍:直拉重摻硼硅單晶中氧沉澱的研究促進效果;大量空位的引入,有利於釋放氧沉澱生長過程的內應力,適當增加重摻硼樣品氧沉澱密度,減少其尺寸,並伴有層錯生成。
  20. Oxidation - induced stacking faults in cz silicon

    直拉硅中氧化誘生層錯研究進展
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