直接帶隙 的英文怎麼說
中文拼音 [zhíjiēdàixì]
直接帶隙
英文
direct band gap-
With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on
Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters
Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。Gan has d1rect, wide bandgap und is one of the ii1ost promising lnateria1. 1t ' s good e1ectrica1, opt ica1 characteristi cs and excel1ent lllecllaniczl1 properties make it one of the most ideal choices for short wave photoe1ectron devices, such as u1 travio1et photodetectors
Gan是最有前景的直接躍遷寬帶隙半導體材料之一，它具有優良的光電性質和優異的機械性能，被認為是制備短波長光電子器件的最佳材料之一。Tin sulfide ( sns ) has an optical band gap of 1. 3ev, which is close to the optimal band gap 1. 5ev
Sns的光學直接帶隙為1 . 3ev ，接近於太陽能電池材料的最佳禁帶寬度1 . 5ev 。Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x
採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。C60, a new type of semiconductor material, has many superior properties, such as wide forbidden band, direct band gap, rapid responding time, high optical damage threshold value and wide responding frequency band etc. these capabilities indicate that c60 film will be used widely in computer, integrate optical instrument and storage device etc. however, the preparation and the purification of c60 material affect the large - scale application at all times
C _ （ 60 ）薄膜作為新的半導體材料具備許多優越特性，如禁帶寬度大、直接帶隙、快速響應時間、高的光學損傷閥值、較寬的響應頻帶等，這些性能預示了c _ （ 60 ）薄膜在計算機、集成光學器件、光存儲器等方面具有廣闊的應用前景，但c _ （ 60 ）材料的制備與提純還一直是阻礙該新材料投入大規模實際應用的主要因素。Direct - gap semiconductor
直接帶隙半導體Zinc oxide ( zno ) is an important wide - band ( 3. 37ev ) semiconductor with low dielectric constant
Zno是一種重要的寬禁帶（常溫下為3 . 37ev ）低介電常數的直接帶隙半導體材料。Zinc oxide, zno, a wide direct - gap semiconductor, attracts as much attention as gan in photoelectric research field
Zno ，作為一種直接帶隙寬禁帶半導體材料，是繼gan之後光電研究領域又一熱門的研究課題。With a broaden and likely direct band gap, porous silicon has a different band structure to that of the bulk silicon. thus the porous silicon can emit at room temperature
多孔硅改變了體硅的能帶結構，使禁帶展寬，並由間接帶隙向直接帶隙轉變，實現了室溫發光。Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature
寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。1ev, which is close to the optimum value of the solar radiation. and it has high energy conversion. it is an important material used in the solar energy cells as absorption layer
Sns無毒、環保，其光學直接帶隙和間接帶隙分別為1 . 2 1 . 5ev和1 . 0 1 . 1ev ，與太陽輻射中的可見光有很好的光譜匹配，非常適合用作太陽能電池中的光吸收層，是一種很有潛力的太陽能電池材料。In all of the optoelectronic materials, cds was paid more attention for the excellent properties, which has commercial and potential applications in light - emitting diodes, solar cells, and other optoelectronic devices
在眾多半導體納米材料中， cds納米粒子以其優良的性能引起了許多科學家的極大關注。 cds是典型的-族直接帶隙半導體化合物，室溫下其禁帶寬度為2 . 42ev 。Under the guidance of new principles and methods of modern sedimentology, detrital petrography, reservoir geology, diagenesis, this thesis has carried out detailed study on paleogene formation correlation, sedimentary environment, characteristics of sedimentary facies and diagenesis of the eastern kuche depression, tarim basin, dina area being taken as the main target of the study. based on the core, geology logging, log and seismic data from 9 typical wells, combined with the data of the adjoining area, the dominant sedimentary types of the study area have been recognized and illustrated, such as fan - delta, lacus and normal delta. in terms of the analysis on the sedimentary facies of typical and connecting wells in different areas and facies belt, together with the paleogene tectonic evolution characteristics of foreland basin, the distribution and evolution of the sedimentary facies of the study area have been clearly discovered both vertically and laterally
通過對該區9口井的巖芯、錄井、測井、地震資料及鄰區資料的分析，識別並闡述了庫車坳陷東部下第三系的幾種主要的沉積相類型，如扇三角洲相、湖泊相和正常三角洲相；通過對不同地區、不同相帶典型井及連井的沉積相分析，結合前陸盆地在下第三系的構造演化特點，弄清了迪那地區下第三系沉積相的縱橫相發育展布和演化規律，並建立了沉積相模式；同時，初步開展了成巖作用、儲層孔隙演化和儲層發育模式的研究工作，科學合理地解釋了現今迪那地區下第三系儲產層主要發育在粉砂巖中的特殊現象，首次建立了下第三系儲層的發育演化模式，為庫車坳陷東部地區進一步尋找下第三系大儲量、高產油氣藏和有利的勘探區塊提供科學的、可靠的和最直接的地質依據。Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。The uv - vis - nir spectroscopy and tauc method are used to calculate the optical gap of dlc films. the result that hydrogen content is 10 ~ 25al % is deduced by the data of the optical gap and fully constrained network ( fcn ) model. thus, a new method, by which the hydrogen content of the dlc films can be determined, was obtained by the auther
由於薄膜中氫的含量與結合狀態直接決定其結構與特性，本文利用uv ? vis ? nir光譜及tauc方法計算得到dlc薄膜的光學帶隙，並根據光學帶隙數據及完全抑制網路（ fcn ）模型獲得了樣品氫含量為10 25這一結果，從而提出了一種簡單確定dlc薄膜中氫含量的新方法。Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。The results show that the differences between the two composites are very large. although the micrograph of the ni nano - wire and the co nano - wire are nearly the same, as the metal composition increased, the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ), however, the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ). meanwhile, the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively
或no組份比的增加， ni / aao吸收邊的紅移量僅約13nln ，而co / aao的吸收邊紅移量卻超過了80lun ，分析發現ni / aao復合體系具有間接帶隙半導體的光學特徵，而co從ao復合結構則具有直接帶隙半導體的光學特徵; 5 .實驗研究了a創aao納米有序陣列復合結構的光吸收特性，在其光吸收譜上出現了較強的ag表面等離子體振蕩吸收峰，隨ag沉積量的減少，吸收峰位發生紅移，且逐漸展寬分享友人