直立單晶 的英文怎麼說

中文拼音 [zhílìdānjīng]
直立單晶 英文
czochralshicrystal
  • 直 : Ⅰ形容詞1 （成直線的; 硬挺的） straight; stiff 2 （跟地面垂直的; 從上到下的; 從前到后的） erect; v...
  • 立 : 動1 （站） stand; remain in an erect position 2 （使豎立; 使物件的上端向上） erect; stand; set up...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 直立 : up-right; stato-直立莖 [植物學] erect stem
  1. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  2. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  3. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  4. In the relatively high dislocation density areas, dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure. here the profile of c concentration in the dimension of a cellular structure is " u " - shaped. the cell diameter increases as the dislocation density decreases, dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure

    發現晶片中位錯密度和分佈嚴重影響碳的微區分佈，高密度位錯區，位錯形成較小的胞狀結構，胞內無孤立位錯，碳在單個胞內呈u型分佈；較低密度位錯區，胞狀結構直徑較大，胞內存在孤立位錯，碳在單個胞內呈w型分佈。
  5. With the demand for high quality of electric energy is increasing ， as the most immediate part to the consumer ， distribution network ’ s efficient and reliable operation is very important as the result ， new distribution automation equipment with high performance is inevitable prime machine system ， as data collection and processing subsystem of dms ， provides communication of kinds of information between control center and rtus it ’ s reliability ， real ? time abilitv and stability affect the scada system directly to solve the disadvantage of the existing system ， whose channels are dependent ， a new proj ect of single board system is brought forward and its hardware and software are designed with high performance chip of communication ， independence of channels is realized basic function of system is realized ， and faster reposition and expansibility of the single chip is fully applied

    配電自動化通信前置機作為dms主站系統的數據採集與處理子系統，提供監控中心與遠方rtu之間各種可能信息的交換功能，其可靠性，實時性和穩定性直接影響scada系統的運行質量。本課題針對現有前置機各通信通道之間不相互獨立、穩定性低的固有問題，提出一種新式單板前置機系統，並對其進行了軟硬體設計，選用高性能專用通信處理晶元，實現各通道獨立，並在實現前置機基本功能的基礎上，充分發揮單片機相對于工控機的快速復位功能以及更好的可擴展性，實現了一個可靠、穩定、靈活的前置機系統。
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