真發射英文怎麼說

真發射 的英文翻譯

真發射 例句

1. With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed
   本文在深入研究 真 空微電子器件場致 發 射 理論的基礎上，根據圓錐形、楔形陰極 真 空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出 真 空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。
2. But just as in real life, it allows you to project nuclear force nearly anywhere on the map from a platform that the enemy has a real hard time tracking
   但是就像 真 實世界中的那樣，核潛艇可以讓你從一個敵人很難找到的平臺上向幾乎地圖上的任何地方 發 射 核彈。
3. Emission of visible light by living organisms such as the firefly and various fish, fungi, and bacteria
   生物 發 光生物體的可見光 發 射 ，如螢火蟲、彩色魚類、 真 菌類和細菌
4. To study the influence of the field - emission cathode materials for the vacuum environment of the field - emission devices, ambipolar electrode configuration was designed in this paper. cnts / ptfe and cnts / epoxy composite materials were used as field - emission cathode and the two electrode configurations were encapsuled into a static vacuum system respectively. by contrastive testing, the field - emission properties
   3 .為了研究場 發 射 陰極材料對場 發 射 真 空器件內部 真 空度影響的問題，設計二極電極結構，分別以碳納米管/聚四氟乙烯和碳納米管/環氧樹脂兩種復合材料作為場 發 射 陰極，進行了 真 空封裝，製成了靜態的 真 空系統。
5. The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )
   影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究 真 空表面閃絡過程有兩類理論：二次電子 發 射 崩潰（ seea ）和電子引 發 極化鬆弛（ etpr ） 。

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