真空放電法 的英文怎麼說

中文拼音 [zhēnkōngfàngdiànfǎ]
真空放電法 英文
vacuum discharge method
  • 真 : Ⅰ形容詞（真實） true; genuine; real Ⅱ副詞1 （的確; 實在） really; truly; indeed 2 （清楚確實） cl...
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  • 真空 : [物理學] vacuum; empty space; vacuo
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  1. In this work, un - doped and nano sic doped mgb2 / fe tapes and wires were fabricated by the powder in tube ( pit ) technique, and the short samples were synthesized through two different routes of the traditional vacuum sintering and the sparking plasma sintering ( sps ). the sintering parameters were optimized in both sintering methods

    本文採用粉末套管法（ powderintube ）原位（ in - situ ）制備了非摻雜和納米sic摻雜的mgb2 / fe超導線帶材，分別採用常規真空燒結和放電等離子燒結（ sps ）兩種方式合成mgb2超導相，優化了燒結工藝參數。
  2. In this paper, firstly, monolithic materials cosb3 and bi2te3 were prepared by sparkle plasma sintering ( sps ) respectively, and at the same time the microstructure of cosb3 and bi2te3 were studied by sem ; the seebeck coefficients and electrical conductivities of monolithic materials were measured by standard - four - probe method ( ulvac zem - 700 ) in a he atmosphere simultaneously, and their thermal conductivities were investigated by laser flash method ( tc - 7000 ) in vacuum. secondly, the junction temperature of graded bi2te3 / cosb3 thermoelectric materials was optimized based on the thermoelectric transport properties of monolithic materials, also when graded materials were used in the temperature difference ranging from 300k to 800k, the length ratio of monolithic materials cosb3 and bi2te3 were optimized in theory. thirdly, graded bi2te3 / cosb3 thermoelectric materials were prepared by two - step sps sintering, and the relationship between its average seebeck coefficients and temperature were calculated by theory mo del

    均質材料cosb _ 3和bi _ 2te _ 3的電導率和seebeck系數採用標準四端子法于he氣氛下在zem - 1上同時進行測量；熱導率採用激光微擾法（ tc - 7000 ）于真空狀態下進行測量；其次，在對均質材料cosb _ 3和bi _ 2te _ 3熱電傳輸特性研究的基礎上，對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的界面溫度進行了優化；為了使結構梯度bi _ 2te _ 3 cosb _ 3熱電材料在300k至800k的溫度范圍內具有最佳的熱電性能，本研究同時對梯度結構熱電材料當中均質材料cosb _ 3和bi _ 2te _ 3材料的長度進行了優化設計；第三，通過兩步放電等離子燒結的方法制備出了結構梯度bi _ 2te _ 3 cosb _ 3熱電材料；採用理論計算的方法研究了梯度結構熱電材料平均seebeck系數和溫度的關系；同時為了驗證設計的結果，本論文對結構梯度bi _ 2te _ 3 cosb _ 3熱電材料的開路輸出電壓和熱端溫度之間的關系及梯度材料在300k至800k的溫度范圍內使用時的功率輸出進行了相應的研究。
  3. The polytetrafluoroethylene ( ptfe ) is used as targets. fluorocarbon films are deposited onto polyimide ( pi ) and polypropyrene ( pp ) substrates, respectively. various discharge conditions ( voltage, vacuum and treating time ) are discussed

    本文利用射頻磁控濺射的方法，以聚四氟乙烯（ ptfe ）為靶材，在聚酰亞胺（ pi ）和聚丙烯（ pp ）基底上沉積氟碳膜，對不同工藝條件（放電功率、真空度、處理時間）進行了探討。
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