真空相變 的英文怎麼說
中文拼音 [zhēnkōngxiāngbiàn]
真空相變
英文
phase transition of vacuum-
With the rapid development of the semiconductor technology, large of the vacuum electronic device has replaced by the semiconductor element from the middle period of the last century. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and wide frequency band and high power field, especially in the exceed - high power field. the complexion won ’ t be changed for a long period
自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被半導體器件取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。From the middle - later period of the last century, with the rapid development of the semiconductor technology, large of the vacuum electronic device was replaced by the semiconductor element. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and high power field. this complexion won ’ t be changed for a long period
自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被其取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。Vacuum phase - transition and the energy mechanism of quasars
真空相變與類星體的能源機制They conclude that such dramatic technological innovations as the spinning jenny, the sewing machine, the typewriter, and the vacuum cleaner have not resulted in equally dramatic social changes in women ' s economic position or in the prevailing evaluation of women ' s work
他們得出結論，這些戲劇性的技術創新，比如紡織機、縫紉機、打字機、以及真空吸塵器，並沒有產生相同的戲劇性的社會變化，在婦女的經濟地位方面，或者在普遍的對婦女工作的評價方面。To get in vivo evidences that apoplast calmodulin con 1d regulate plant growth and development process, a chimeric secretion form of calmodulin binding peptide, which contains a signal peptide, a calmodulin binding domain and a c - myc epitope was constructed. the chimeric gene was introduced into arabidopsis. it was expected that the overexpression of this chimeric protein could be secreted into cell wall and bound to apoplast calmodulin, which could reduce the apoplast calmoduin concentration to make an apoplast camodulin " antisense " plant. by observing the potential phenotype change of apoplast calmodulin " antisense " plant, the in vivo function of apoplast calmodulin on plant growth and developmental process could be speculated
但這些多是採用生理學手段和藥理學方法而得出的體外（ invitro ）實驗結果，為了取得質外體cam在植物生長發育過程中發揮重要作用的invivo實驗證據，根據動物中的一些研究方法，本實驗設計並構建了帶有信號肽、 cam結合肽（ can小肽） 、 epitope （ c - myc ）融合基因的載體，並將融合基因通過真空滲入法轉入擬南芥，預期過表達的融合蛋白將會被分泌到細胞外並與質外體cam相結合，這樣就會抑制質外體cam的功能，從而可以構建質外體cam的「反義」植株，通過觀察質外體cam 「反義植株」的表型改變，就可以推斷質外體cam在植物生長發育過程中的功能。Adopt advanced technic of f4 whole cold - press to moulding and heat melt to process to make, let the lining no slot to link withal cheek by jowl connect with exterior metalpipes wall, in the state of allowwing to work keep to distort in - phase, thereby to enhance using - life of lining in the working status of opposite high temperature high vacuum, stop the ecumenic pad fluorin pipes using in condition of cold and heat alternate and minus tension to come into being the matter of padding fluorin floor shrivel to jam the flowway and plastic rip, its perfect choice use to transport medium of strong corrosive strong oxidation by modern chemical - industry corporation
採用氟塑料f4整體冷壓成型及熱熔加工等先進技術製造，使內襯層無縫搭接且與外層金屬管壁緊密粘接，在允許工作狀態下能夠保持同步變形，從而提高了襯里層在相對高溫高真空度的工況下的使用壽命，杜絕了一般襯氟管在冷熱交替，及負壓的條件下使用易產生襯塑層鼓癟阻塞流道及塑料拉裂的問題，是現代化工企業在輸送強腐蝕強氧化介質理想的選擇。Such control can be realized in case where a atom interact with photonic band gap matericals when the atom is placed in photonic crystals whose density of modes is dramatically different from that of free space vacuum. it was known that control could be achieved by varying the frequency ( which leads to the changes of the relative position of the upper levels from the forbidden gap ) or by varying the photonic density of modes ( dos ) or by varying the intial atomic state
由於光子晶體具有不同於真空中的光子態密度，原子和光子帶隙材料便發生相互作用，這樣便可以控制原子的自發輻射。改變原子上能級與光子禁帶邊緣的相對位置、材料中的光子態密度或原子初態都可以控制原子的自發輻射。At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。Based on the results of testing site, some problems of vacuum preloading was analyzed by plane strain finite element method. the relative stable seepage velocity field can be produced with the pumping time. the depth of negative pore - water pressure transferring increases with the pvds length
最後，對真空聯合堆載預壓的施工工藝進行了研究，提出了在真空聯合堆載預壓的中期，出水量已相對較少，可適當減少開泵量，並可採用停抽結合的變真空能量法，在不影響加固效果的前提下，可以大大節省用電量。In this paper, we begin with actual products designs and then combine the real conditions. on condition that technique conditions requirements were satisfied, by adopting electromagnetic field numerical analysis and experimental research, the electric field distribution inter - phase and to ground of 12kv metalclad withdraw switchgear vacuum circuit breaker is described accurately. the electric field distribution and movement in different conditions are also confirmed
本文從實際產品設計入手，結合現實情況，在滿足技術條件要求的基礎上，通過採用電磁場的數值模擬分析及實驗研究，準確地描述了12kv配電系統中置櫃真空斷路器相間及對地全場域電場分佈情況，確定了中置櫃在不同情況下的電場分佈、變化情況，通過理論的計算和分析，對產品的絕緣進行了校核與驗證，通過多種方法的比較，進而得到合理的布置結構和達到最佳的絕緣配合，為實際產品的開發和設計提供了理論依據。The results show that each target is superior to traditional heating system : the heat efficiency is higher by 20 %, the operating cost is lower by 50 %, the system starts quicker, the isothermal characteristic is better
結果表明：真空相變供熱系統熱效率比傳統供熱裝置高20 % ，運行費用節省50 % ，啟動快，等溫性好，各項性能指標均優于傳統供熱系統。Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities
通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
（ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。Abstract : with the theory of vacuum phase - transition and the special theory of relativity, and adding two simple hypotheses that are not contradictory to the theories now available, the paper deduces a kind of energy fomula that gives a probable interpretation of some quasars " energy mechanism that far exeeds the energy of nuclear
文摘:利用真空相變理論和狹義相對論，加上兩個與現有理論不相矛盾的簡單假設，導出了一種能量計算式，對某些類星體遠比核能強大的能源機制提出了一種可能的解釋Based on analyzing sintering and infiltration processes, the effect of infiltration temperature on microstructure and properties of the material was studied when the ratio of w - cr, the porosity of green compact and the sintering process of w - cr skeleton were fixed. the differences of microstructure and properties of the composites with different composition were investigated by same sintering and infiltration processes. the composites were prepared in h2, n2, ar and vacuum conditions respectively
基於對wcr cu復合材料的燒結和熔滲過程的分析，研究了cr - w配比、壓坯緊實率、骨架燒結工藝相同的情況下，不同熔滲溫度對材料的組織形貌和性能的影響；研究了燒結-熔滲工藝相同的情況下，不同配比對材料組織和性能的影響；研究了h _ 2 、 n _ 2 、 ar和真空四種燒結氣氛下材料組織和性能的變化。In fluent, the flow field of the tube wall, center, top, middle and bottom of the evacuated solar collector tube can be observed, the temperature - time curve and radial temperature gradient can be obtained, the heat loss of different part can be directly captured. 3. all kinds of effect factors of the flow field and temperature field have been analyzed
通過fluent計算，清楚地觀察到太陽能真空集熱管壁面和中心部分，頂部、中部和底部在各種工況下的流場分佈均不相同；得出了各種工況下的溫度-時間變化曲線，沿軸線方向的溫度梯度；同時還計算了各部分熱損的傳熱流量； 3The type of the specific vaccum tap switch which i study is bpkal50 - 10 / 35 - 9c. this tap switch is suitable for 6 - 10kv - voltage degree which maximum current rating is 150a and maximum usable frequency is 50hz
課題具體研製的真空開關型號為bpk 150 ? 10 / 35 ? 9c 。它適用於電壓等級為6 ? 10kv ，最大額定通過電流為150a ，額定頻率為50hz ，三相任意連接的乾式電力變壓器。The quantum teleportation of continuous variables with two - mode squeezed vacuum states is reviewed. its importance and advantages relative to the quantum teleportation of discrete variables are discussed
介紹了通過雙模壓縮真空態實現連續變量量子隱形傳態的方法，並探討了這一工作的重要意義及其相對于分離變量量子隱形傳態的優越性An experimental research has been taken on heat efficiency, startup behavior, isothermal characteristics of a vacuum phase change heating system using a new kind of compound working medium
摘要利用新型復合工質對真空相變供熱系統進行了熱效率、啟動特性、等溫特性的實驗研究。In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。分享友人