短溝 的英文怎麼說

中文拼音 [duǎngōu]
短溝 英文
snlci brevis
  • 短 : Ⅰ形容詞（空間、時間兩端之間的距離小） short; brief Ⅱ動詞（缺少; 欠） lack; owe Ⅲ名詞1 （缺點） we...
  • 溝 : 名詞1 （挖掘的水道或工事） channel; ditch; gutter; trench 2 （淺槽;似溝的窪處） groove; rut; furr...
  1. The products are widely applied to lander, branch lander and safety liners of large and medium - sized high furnaces with one - time iron capacity of over 100thousand tons. after rectifying, the iron capacity can be as much as over 300thousand tons

    同時具有抗氧化、耐熱震、烘烤時間短、施工方便等優點，廣泛應用於大中型高爐出鐵主溝、支溝和安全襯，一次性通鐵量十萬噸以上，經修補后通鐵量可達三十萬噸以上。
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  3. American plant with roundish heart - shaped or kidney - shaped leaves ; usually rooted in muddy bottoms of ponds and ditches

    一種美國水生植物，葉腎形或圓心形，佛焰苞具有短的柄或無柄；通常紮根在池塘和水溝的底部淤泥中。
  4. The third part studies the actual questions of our e - government, and thinks there are 5 aspects of problem in the area : the people ' s ideas is the key to the problem, which is the largest resistance to build the e - government ; the old administrative system ca n ' t adapt the e - government ; it ' s serious to the " digital gap " question ; the information professional is scarce in the government ; the related laws and rules, especially the open information systems are imperfect, in face of the five problems, i bring forward the six countermeasures : the government should strengthen to educate the government employee on the related knowledge ; strongly push on reinventing government ; the " e - government " should be strugglingly developed ; resolve the " digital gap " question ; establish and perfect the correlative laws and rules ; try hard to settle the question of net safety

    在論文的第三部分，我著重對我國電子政府目前的問題進行了提煉、分析，認為存在著五大方面，分別是：關鍵是人的思想觀念跟不上，成為電子政府建設的最大阻力；原有的行政體制不適應電子政府的發展； 「數學鴻溝（ digitalgap ） 」問題嚴重；信息人才短缺；相關法律法規不完善、信息公開的制度保證不足。針對這五個方面，我提出了六點解決對策，分別是：大力加強對公務員的培訓和教育；強力推進政府再造：電子政務要大力發展；解決數字鴻溝問題，加大「兩軟一硬」投入；建立健全相關的法律、法規；努力解決好網路安全問題。
  5. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  6. We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect

    在考慮了各種散射效應對遷移率的影響后，提出了短溝道most表面載流子遷移率的溫度模型。
  7. Her appearance belongs to the fire type, has sharp type of face, there are more black than white in the pupils of her eyes, both eyes are wide apart, the ears are lower than the eyebrows, her earlobes are thick and broad, protruding internal earbone, short nose, wing of the nose is frail and a little protruding, her mouth forms a line when it is closed, the sides of her mouth is slightly turn downwards, the thickness of the upper and lower lips is even, her cheekbones are not high, and the law grain is profound

    面相屬火，尖形臉，額頭高且突，下巴尖，眼珠黑多白少，兩眼間的距離開闊，眉陵骨凸，耳低於眉，耳珠厚和寬，內耳骨凸出，鼻短、鼻翼單薄和有點外仰，人中平滿欠缺凸下溝紋，嘴巴緊閉時成一線，嘴邊兩角微微向上彎，上下唇的厚度均勻，顴骨位置不高也不大但法令紋深長。
  8. Short grammar and glossary of grammatical terms : to aid effective communication additional features : model letters ; a list of phonetic symbols used for german words ; guide to german pronunciation ; german irregular verbs ; games to develop dictionary skills

    短期語法和詞匯，語法術語：以援助有效溝通額外功能：示範信件;名單注音符號用德語詞匯;指南德國發音;德語不規則動詞;游戲開發字典技能。
  9. The editorial office needs to establish scientific manuscript - handling system, reduce the cycle for manuscript evaluation, increase the elimination rate, and set up the communication mechanism between editors and authors, thereby effectirely solving the problems

    學報編輯部應通過建立科學的稿件處理制度、縮短審稿周期、增加稿件的淘汰率及建立編輯和作者的溝通機制等措施，來有效解決這一問題。
  10. Theres an old story of a ship traveling through the seas and seeing an obstacle in his way, another ship, he used his means of communications to request that they alter course. they used the light system, you know ? the flashing lights to communicate with the dashes and dots

    有一個古老的故事，海上有一艘船，船長看到前方有障礙物，是另一艘船於是他啟動溝通裝置，要求對方改變航道，他們當時使用燈光發訊號，一閃一閃的燈光，長短短長的發出訊號。
  11. We have great confidence in the power of our team. we give service to our clients by the power of our team. brand design is like a pro - ject on mental labour. we made overall layout since pre - project work. shahtoosh is not traditional advertising company, we have no pag - es of newspapers and magazine or billboards. we are not good at those. so, you should konw the nature of our business. we are good at brand design to the solution of practical problems for enterprise on ci. design is more than deal, you may take 10, 000 rmb to get a lo - go from one ' s advertising company, but you never get plans and thoughts of the solution on ci. shahtoosh can give theses to your com - pany

    在沙圖什的品牌設計團隊中，最重要的就是品牌設計部和品牌執行部，沙圖什沒有業務員，在企業形象的建立中，不是業務員的短期工作能解決問題的，所以沙圖什的業務來源全部依靠實際的口碑和網路口碑，然後由品牌視覺設計師直接和客戶溝通，這樣就減少了在溝通的傳達過程中的客戶信息流失，使設計師得到的信息更真實，減少客戶不必要的時間浪費。
  12. Good communication and coordination of business negotiations can help businesses cut costs, improve product quality and shorten delivery. increase their market competitiveness

    良好的溝通協調和商務談判能力，能夠幫助企業節約成本，提高產品質量，縮短交期，增強市場競爭力。
  13. So it is valuable to research the high temperature characteristic of microelectronics devices. this paper discussed the electrical characteristic of short channel most at very high temperature

    本文以短溝道most電學參數的溫度特性為研究對象，對高溫短溝道most的電學特性進行了深入的探討。
  14. This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted, which is for short channel mos field effect transistor specially. these works are presented in this paper. 1

    本論文選取目前業界佔主流地位的bsim3 （ berkeleyshort - channeligfetmodel ）為將要提取的模型，它是專門為短溝道mos場效應晶體管而開發的一種模型。
  15. We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current, gave a expressions for studying the temperature characteristic of source - drain current, and deduced a ztc point expression

    研究了溝長調制效應和漏致勢壘降低效應對漏源電流溫度特性的影響，給出了一個用於研究漏源電流溫度特性的電流公式；並推導了短溝道most的ztc點公式。
  16. We deduced a expressions for threshold voltage temperature coefficient of short channel most. and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature, but it increased sharply at high temperature

    推導了了一個短溝道most閾值電壓溫度系數表達式；發現短溝道most閾值電壓溫度系數在高於室溫的一個較寬的溫區內近似不變，但在溫度較高時迅速增大。
  17. The source drain extension ( sde ) structure and its reliability are thoroughly studied. first, it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance. it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices

    本文對深亞微米源漏擴展mos器件結構及其可靠性進行了深入研究，首先通過模擬驗證了源漏擴展（ sde ）結構對短溝道效應的抑制， sde區寄生電阻對器件性能的影響以及sde區摻雜濃度的提高對器件性能的改善，指出了器件尺寸進一步減小后，提高源漏擴展區摻雜濃度的必要性。
  18. The model of threshold voltage solves the problems of nonuniformly doped channel, short channel effect, implantation for adjusting threshold voltage, edge capacitance of gate, etc. not only the model can be used in ldmos, but it can perfectly describe the short channel effect of threshold voltage for all other mos devices

    其中，閾值電壓模型解決了溝道非均勻摻雜、短溝道效應，調閾值注入，柵邊緣電容等問題。該模型不僅適用於ldmos ，也可以很好地描述所有的mos器件閾值電壓的短溝道效應，嚴格證明了短溝道效應會引起閾值電壓的減小。
  19. Compared with the similar research results, the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e. g. 50mhz ), while in higher frequency they slightly deviate from 50, hence the energy reflection lower than 0. 1 ; ( 6 ) it completes the functions of sampling, weighting, controlling and summing of high frequency analog signals

    它的加權控制電路與已報道的相關電路相比具有如下特點：電路結構簡單；製造工藝與普通cmos工藝兼容：短溝道，高寬長比的nmos晶體管具有低的通導電阻，將其作為加權、輸出器件可降低由電路引起的插入損耗；改變加權信號，可實現權值在較大范圍內的連續變化；輸入、輸出阻抗在低頻（如50mhz ）下接近50 ，而在高頻下略有偏離50 ，但反射系數均低於0 . 1 ；實現了對高頻信號的取樣、加權、控制、疊加功能的迭加。
  20. This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet. its advantages are as fellow : no latch - up effect, better capability of resisting invalidation, much smaller parasitic capacitance, weaker hot - carrier effect and short - channel effects, and simpler technics, and so on

    通過與體硅bjmosfet比較，討論和分析了soibjmosfet的優點：無閂鎖效應、抗軟失效能力強、寄生電容大大降低、熱載流子效應減弱、減弱了短溝道效應、工藝簡單等。
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