砷化鎵單晶 的英文怎麼說
中文拼音 [shēnhuàjiādānjīng]
砷化鎵單晶
英文
arsenide gallium monocrystal-
Boat - grown gallium arsenide single crystals and as - cut slices
水平法砷化鎵單晶及切割片Gallium arsenide single crystal - determination of dislocation density
砷化鎵單晶位錯密度的測量方法Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化鎵單晶及切割片Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits, and it has become one of major materials in information industry
液封直拉法生產的半絕緣砷化鎵單晶（ lecsi - gaas ）被廣泛用於微波器件和高頻集成電路的襯底材料，成為當代信息產業的重要材料之一。By means of chemical etching, microscope observation, eelectron probe x - ray micro - analyzer ( epma ), the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated, the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通過ab腐蝕、 koh腐蝕，金相顯微鏡觀察，透射電鏡能譜分析，電子探針x射線微區分析，研究了液封直拉法生長的非摻半絕緣砷化鎵（ lec ， si - gaas ）單晶中碳的微區分佈。Test method for microzone homogeneity of semi - insulating monocrystal gallium arsenide
半絕緣砷化鎵單晶微區均勻性測試方法Quantitative determination of ab microscopic defect density in gallium arsenide single crystal
砷化鎵單晶ab微缺險密度定量檢驗方法Test method for carbon concentration of semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
半絕緣砷化鎵單晶中碳濃度的紅外吸收測試方法Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
非摻雜半絕緣砷化鎵單晶深能級el2濃度紅外吸收測試方法Our research work lays a good foundation on development of gaas semiconductor and has great significance to the development of semiconductor detector in our country
我們的研究工作為開發砷化鎵單晶體的應用奠定了良好的基礎，對國內半導體探測器技術的發展具有重大意義。分享友人