砷化鎵 的英文怎麼說

中文拼音 [shēnhuàjiā]
砷化鎵 英文
gaas laser diode
  • 砷 : 名詞[化學] （非金屬元素） arsenic （as）
  • 鎵 : 名詞[化學] gallium （31號元素, 符號 ga）
  1. Test method for ga as ratio of surface of gallium arsenide

    砷化鎵表面鎵砷比的測試方法
  2. Boat - grown gallium arsenide single crystals and as - cut slices

    水平法砷化鎵單晶及切割片
  3. Test method for thermal stability testing of gallium arsenide wafers

    砷化鎵晶片熱穩定性的試驗方法
  4. Gallium arsenide single crystal - determination of dislocation density

    砷化鎵單晶位錯密度的測量方法
  5. Gallium arsenide injection laser

    砷化鎵注入雷射
  6. Gaas solution for cable tv network upgrade

    為電纜電視網路系統改造提供的砷化鎵方案二
  7. Aluminium gallium arsenide, algaas

    砷化鎵鋁
  8. Measuring thickness of epitaxial layers of gallium arsenide by infrared interference

    砷化鎵外延層厚度紅外干涉測量方法
  9. Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices

    液封直拉法砷化鎵單晶及切割片
  10. Gaas varactor diode

    砷化鎵可變電抗二極體
  11. Semiconductor discrete device. detail specification for gaas varactor diodes for 2ec600 series

    半導體分立器件. 2ec600系列砷化鎵變容二極體詳細規范
  12. Test method for sub - surface damege of gallium arsenide polished wafer by x - ray double crystal diffraction

    砷化鎵拋光片亞損傷層的x射線雙晶衍射試驗方法
  13. Gallium aresenide injection laser

    砷化鎵注入式激光器
  14. Gallium arseide detector

    砷化鎵探測器
  15. Uses 4 gaas power double amplifier module. plug - in level adjustment and slope adjustment for each way are on the back panel, comvenient to use

    4個高電平素出採用4個砷化鎵功率倍增放大模塊輸出，每路獨立的電平調整插件式和斜率調整插件式在機箱背板上，使用方便。
  16. Protection of gaas fea module from surge voltage

    砷化鎵場效應放大模塊的浪涌電壓防護
  17. Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide

    如果成功，工程師就能在成本低廉的矽晶片上同時製作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，製作成本高昂的半導體雷射。
  18. Based on the energy band characteristics of ordinary negative electron affinity emitter gaas, the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented, and the special negative electron affinity emitter gaas was designed

    摘要根據通常負電子親和勢二次電子發射材料砷化鎵的能級特點，提出延長負電子親和勢二次電子發射材料砷化鎵的逸出深度的理論設計，設計出了特殊的負電子親和勢二次電子發射材料砷化鎵。
  19. Gaas injection laser

    砷化鎵注入式激光器
  20. After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened

    為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。
分享友人
分享到 Line

分享到臉書