硅傳感器 的英文怎麼說

中文拼音 [guīzhuàngǎnqì]
硅傳感器 英文
silicon sensor
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 傳 : 傳名詞1 （解釋經文的著作） commentaries on classics 2 （傳記） biography 3 （敘述歷史故事的作品）...
  • 感 : Ⅰ動詞1 （覺得） feel; sense 2 （懷有謝意） be grateful; be obliged; appreciate 3 （感動） move; t...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  1. Study of silicon for quick analysis of bf iron

    高爐鐵水快速定硅傳感器的研究
  2. The accuracy of the mfc was 3. 8 % fs, and the rotor flow meter ' s was 2 % fs. 2. the measurement of pressure was carried out by using semiconductor silicon piezometer

    （ 2 ）壓強的測量採用半導體硅壓阻式壓強傳感器，通過測量mpt進氣管路的靜壓，結合理論分析計算得到mpt諧振腔的總壓。
  3. The silicon force sensor using bulk silicon process has lots of advantages such as batch producible, low cost, high precision, small driving force, high reliability, low power consuming, small dimension, light weight and quick response, etc. therefore, a scheme is proposed in this paper

    由於微機械工藝採用的技術多是半導體工業的硅表面工藝和體硅加工工藝，因此這種傳感器可以大批量製造，且具有低成本、高精度、低驅動、高可靠性、低功耗、佔用空間小、重量輕和響應速度快等優點。
  4. The sensor adopted micro melts technology and introduce aviation application science and technology ; using high temperature glass the micro processing silicon voltage dependent resistance strain gauge to melt on the stainless steel diaphragm

    傳感器採用的微熔技術，引進航空應用科技，利用高溫玻璃將微加工硅壓敏電阻應變片熔化在不銹鋼膜片上。
  5. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  6. The experimental results showed that the substrate of pyroelectric sensor could significantly affect the detectivity. the porous silicon dioxide and pet plastic film substrate could effectively decrease the thermal conduction and the thermal fluctuation noise of the pyroelectric element, increase the voltage responsivity and the detectivity obviously

    結果表明，多孔氧化硅和pet塑料可有效降低熱釋電元件的對外熱傳導，明顯提高傳感器的電壓響應率和降低熱釋電元件的熱噪聲。
  7. In this paper, basic pneumatic - measuring theory and air circuit system working principle are introduced. the pneumatic - electric transducer employs a mpx5500dp silicon pressure sensor which converts air pressure signal into voltage signal, and displays on the electron column after the signal conditional circuit ’ s processing

    本課題從分析氣動測量的基礎理論入手，研究氣路系統的工作原理，用mpx5500dp擴散硅壓力傳感器將氣體壓力信號轉換為電壓信號，進而研製成功一種氣電轉換器。
  8. This paper aims at investigating and realizing an asic cell of high performance instrumentation amplifier based on the standard cmos process, which is employed in the readout circuits of microsilicon sensor as a part of soc

    本文的主要目的是研究並採用標準cmos工藝實現一種高性能的儀表放大器專用集成電路模塊，該模塊專用於電容式微硅傳感器的一種soc模式讀出電路中。
  9. In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology

    為使二維振動傳感器在兩主軸方向的靈敏度大致相同，敏感元件採用高度對稱的四梁結構，其中每個軸向上均採用帶折疊梁的雙側叉指電容結構，採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件，具有高靈敏度、寬量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算，並利用有限元法進行了模擬分析，根據模擬結果得出了優化參數;在確定敏感結構的基礎上，研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析，利用差動測量技術得到由振動引起的微小電容變化量，經c - v介面電路進行相位調制處理，然後通過解調輸出與加速度成正比的電壓信號。
  10. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  11. In accordance with practice a differentiation is made between variants and performance classes of favourably priced designs with flat sensor housings and pvc connection cables up to high capacity sensors with special wiring silicon, teflon

    根據實踐經驗，差異是由變量和表現等級造成的-比如價格合理的設計，扁平的傳感器外形和pvc連接電纜到有特殊電線硅特氟隆的大容量的傳感器。
  12. The nanoporous silicon membrane can be used as drug carrier, immuniosolating biocapsules, nanoporous silicon micromirror and biosensors in medical field

    在醫學上的納米多孔硅膜可作為藥物載體、免疫隔離生物膠囊、納米硅微鏡和納米多孔硅生物傳感器。
  13. It can optimize the process of piezoresistive sensor calibration and compensation, then, a total error factor within 0. 2 % of the sensor s repeatability errors is obtained

    通過該晶元的補償，可以使硅壓阻式傳感器的重復性誤差小於0 . 2 % 。
  14. A design of using lpcvd silicon - rich silicon nitride of low residual stress as the resonant beam is proposed based on technology of sacrificial porous silicon and a new type peninsula structure is also proposed for high pressure sensitivity

    提出了基於多孔硅犧牲層技術的利用lpcvd生長的低應力厚的富硅氮化硅作為諧振梁的壓力傳感器結構設計。為了提高靈敏度，還提出了一種半島結構。
  15. This paper introduces a miniature electric field sensor ( efs ) using dual piezoelectric ceramics bars as driving structure

    摘要一種新型的，以壓電陶瓷條為馭動、硅為屏蔽和感應電極的微型電場傳感器。
  16. Silicon bandgap temperature sensor

    硅帶溫度傳感器
  17. His team ' s sensors are engineered at the nanoscale ? the size of molecules ? and are cheap because they ' re etched out of flakes of silicon, the stuff of computer chips and beaches

    這種傳感器的尺寸在毫微級分子大小而且很便宜，因為它們都是用硅元素薄片（計算機晶元和沙灘的組成成分）作出來的。
  18. The expression can be used in calculation for relationships of the input voltage, output voltage and device geometry parameter

    用漸近解的分析方法對所求到的解進行簡化，導出了硅橫向壓阻效應四端壓力傳感器的輸出電壓表達式。
  19. Silicon sensors are the tendency of the development of sensors. with the development of technology, mems ( micro - electro - mechanical systems ) have became more and more attractive

    微硅傳感器是傳感器的發展趨勢，隨著技術的發展，將微硅傳感器和測試電路集成在一塊晶元上構成mems （微機電系統）更是受到了廣泛的關注。
  20. Microsilicon sensors are the tendency of the development of sensors. with the development of cmos technology, micro - electro - mechanical systems ( mems ) have become more and more attractive

    微硅傳感器是傳感器的發展趨勢，隨著技術的發展，將微硅傳感器和測試電路集成在一塊晶元上構成微機電系統更是受到廣泛的關注。
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