硅化物半導體 的英文怎麼說

中文拼音 [guīhuàwùbàndǎotǐ]
硅化物半導體 英文
silicidesemiconductor
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 物 : 名詞1 （東西） thing; matter; object 2 （指自己以外的人或與己相對的環境） other people; the outsi...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  1. Flexibility, processability, low cost, interesting optical - electric properties and so on make organic materials be a good substitute for inorganic ones. modification of inorganics by organics can change surface properties of inorganics, for example, frictional, optical, electrical, chemical and biocompatible properties. on the other hand, many interests have been shown to integration of functional organics in si - base devices because of their great promise in optoelectronic, micro - electronic and sensor applications

    通過對無機半導體材料進行有機改性，可以改變無機材料的表面化學性質，生物相容性質，光電性質等等，因此，有機無機復合材料在光電器件、生物傳感、微電子器件的應用領域有著很好的應用前景，尤其是在微電子工業中廣泛使用的硅材料與有機光電材料的復合更是備受關注。
  2. Plasma etching has been widely used in the etching process of si devices. now the study is focused on the microfabrication of compound semiconductor

    等離子體干法刻蝕在硅器件的微細加工中已經得到廣泛應用，目前研究的焦點集中在化合物半導體。
  3. After a brief introduction to the excitation of semiconductor luminescence diode, the light - emitting machenisms of various new luminescence materials, including - and - semiconductor compounds and ps, the structures of different luminescence diodes, and their properties were discussed, and the application of semiconductor luminescence diode in modern science was presented

    在簡介半導體發光二極體的輻射復合基礎上，詳細討論了包括?族、 ?族化合物半導體材料和多孔硅（ ps ）等新發光材料在內的各種發光材料的發光機理、發光二極體的結構與特性.並介紹了半導體發光二極體在近代科學中的應用
  4. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
  5. Besides the element semiconductors, such as si ( called the first generation semiconductor ), and the compound semiconductors, such as gaas, inp ( called the second generation semiconductor ), silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )

    碳化硅（ sic ）材料是繼第一代元素半導體（ si ）和第二代化合物半導體（ gaas 、 inp 、 gap等）材料之後的第三代寬帶隙半導體材料。
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