硅外延材料 的英文怎麼說

中文拼音 [guīwàiyáncáiliào]
硅外延材料 英文
siliconepitaxymaterial
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 外 : Ⅰ名詞1 （外面） outside; external side 2 （外國） foreign country 3 （以外） besides; beyond; in ...
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  • 料 : 名詞1 （材料; 原料） material; stuff 2 （喂牲口用的穀物） feed; fodder 3 （料器） glassware 4 （...
  • 材料 : 1. （原料） material 2. （資料） data; material 3. （適于做某種事的人才） makings; stuff
  1. Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers

    半導體工藝材料的檢驗.硅晶體外延層缺陷種類和缺陷密
  2. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  3. Testing of semi - conductive inorganic materials ; measuring the thickness of silicon epitaxial layer thickness by infrared interference method

    半導體無機材料的試驗.用紅外線干涉法測量硅外延生長
  4. As a result, the cutoff frequency of sbd is limited at a lower level. now, we can grow sub - micro film of silicon using uhv / cvd technology. then we make an original device sbd of high frequency

    現在，我們浙江大學硅材料國家重點實驗室利用uhv cvd技術，生長出亞微米厚的薄硅外延層，在此外延層上研製出高頻肖特基二極體原型器件。
  5. The motorcycle line : the line has gaoming co, ltd, yihao co. ltd, general electric corporation and jingjia group etc. which annually turn out 200 thousand motorcycle engines and over 300 thousand motor - bicycles and have the capacity to equip motorcycles with complete spare parts. it has various advanced production and testing equipment and the biggest spare parts market for cars and motorcycles which has become famous " motorcylce city " near and far in the middle jiangsu

    -快速崛起的硅太陽能集群：以大口徑太陽能級單晶硅生產企業江蘇順大半導體公司為基礎，按照「主攻多晶硅發展單晶硅打通產業鏈」的發展思路，通過引進國外同行知名企業加盟，擴大光電轉換材料的生產規模，延伸開發上下游產品，形成全國最大的光電轉換材料太陽能電池及太陽能燈具的生產基地。
  6. With the film thickness, which was determined using transmission electron microscopy ( tem ), and the known material number density ( since the film is epitaxial on silicon, the number density is the same as in silicon crystals ), this determines the ge concentration

    由通過隧道電鏡（ tem ）決定的膜厚和已知材料的密度（因為薄膜為硅上外延，密度與硅單晶相同） ，決定了鍺的濃度。
  7. After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal, and its thickness is uniform

    優化了外延條件，結合低溫鍵合與多孔硅的剝離技術，在國內首次用多孔硅外延層轉移技術成功地制備出了soi材料。分析表明， eltran - soi的頂層硅厚度均勻，單晶質量優良；界面清晰、陡直；電學特性優異。
  8. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
  9. Sige - on - insulator ( sigeoi ), which appears very recently, integrates both the advantages of soi and that of sige and thus attracts much attention for the potential applications in low voltage, low power consumption, high dense integrated circuits and optoelectronics, system on chip etc. but people are in the very beginning of the sige - oi material fabrication research. this work focuses on these three facets : 1. sige film preparation ; 2

    本論文結合以上背景，主要進行了以下幾個方面的研究：一、硅基上sige材料的異質外延生長技術，以及sige薄膜的表徵；二、 sige - oi的simox制備工藝研究；三、 sige - oi材料的smart - cut制備工藝研究，以及sige / si異質結結構中注入h離子的物理效應。
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