硅外延片 的英文怎麼說

中文拼音 [guīwàiyánpiān]
硅外延片 英文
silicon extending slice
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 外 : Ⅰ名詞1 （外面） outside; external side 2 （外國） foreign country 3 （以外） besides; beyond; in ...
  • 片 : 片構詞成分。
  1. Specification for silicon epitaxial wafer for microwave power transistor

    微波功率晶體管用硅外延片規范
  2. Silicon extending slice

    硅外延片
  3. The concrete work in this thesis : 1 ) fabrication of high response frequency sbd using thin si epi - layer

    本文的具體工作可歸納為： 1 ）薄硅外延片研製高頻肖特基二極體的原型器件。
  4. B ) sbd was made using the si epilayer as the active layer, qualified with a set of device technology

    B ）在薄硅外延片的生長基礎上，探索製作肖特基二極體的相關工藝，研製高頻sbd原型器件。
  5. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  6. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  7. 3. finally, we explore a serial of other fabrication technology of sbd of high frequency, including oxidation techniques, photoetching techniques and vacuum deposition. an original sbd of high frequency has been made

    最後，利用所生長的薄硅外延片，探索出其它一系列相關的高頻肖特基二極體的製作工藝，包括氧化工藝、光刻工藝、真空鍍膜工藝等，製作出了高頻肖特基二極體的原型器件。
  8. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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