硅平面結 的英文怎麼說
中文拼音 [guīpíngmiànjiē]
硅平面結
英文
silicon planar junction-
The novel vertical carrier - free linear cluster system phoebus for the economical deposition of amorphous and microcrystalline silicon light absorbers by pecvd ideally combines the strengths of proven vacuum production platforms to precisely focus on the needs of solar cell producers : process stability, productivity, yield, footprint, costs of ownership
新的立式無載體線團系統」菲波斯」 （ phoebus ） ，以pecvd方法經濟地鍍膜無定形的和微晶硅吸光體，理想地結合各種證明可靠的真空生產平臺的優點來精確的聚焦于滿足太陽能電池生產者的需求:工藝的穩定性，生產效率，合格產量率，佔地面積和擁有運營的總成本The temperature distribution on the high temperature side of an electric tunnel furnace is analysed and simulated on the basis of the principle of thermal radiation by the way of thb ( thermal heat balance ). the heated silicon carbon sticks are decomposed into innumerable tiny heating faces, which exchange the heat with the heated materials. a numerical model based on the radiation intensity law is constructed to calculate the energy absorbed by the heated materials and simulated by a computer. the results showed that the even distribution of temperature can be obtained by optimizing the arrangement of the silicon carbon sticks according to the calculation results to make the structure design more reasonable. these calculation results have been used in the practical designs and the expected objectives achieved
利用熱輻射原理，採用熱平衡法對電熱隧道窯的高溫恆溫區溫場進行了分析和模擬.計算中將發熱棒分解為無數微元發熱面與燒結體進行熱交換，依據輻射強度定律，建立了燒結體接收能量的數學模型，並用計算機進行了模擬計算.結果表明，依據模擬結果來優化硅碳棒的排布，可使結構設計更加合理，進而可以獲得分佈均勻的恆溫區溫場.計算結果已在窯爐設計中應用，實踐效果良好The results of testing show that the silicon ( 111 ) crystal plane is very smoothing by etching method
測試結果表明，利用腐蝕方法得到的硅的（ 111 ）晶面周期結構平整光滑。We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized
文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature
本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗The method has been used in experiments of shock activating si3ni4 powder materials, and the results are satisfactory
此設計用於化爆產生平面動載的氮化硅粉體沖擊波活化研究，取得了較為理想的測試結果。At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。Moreover, the two - step heat treatment method was utilized in the preparation of the films, the films prepared by the first coating with 550 ? heat - treatment and the second coating with of with 500 ? heat - treatment ( b type films ) were highly c - axis oriented with smooth, dense and uniform surface morphology
此外，結合高溫和低溫熱處理方法優點的兩步熱處理法得到的b型薄膜同時具有較好的c軸擇優取向性和更為平整均勻的表面形貌。另外，在硅基板上也制備出了良好的c軸擇優取向性的摻雜氧化鋅薄膜。We use the laser output ( 320 nm, 200 fs ) of optical parametric amplifier ( opa ) in < wp = 5 > an active passive mode - locked femtosecond ti - sapphire laser operating at a repetition rate of 1khz as a exciting resource to develop optically pumped stimulated emission of zno thin films. when rectangular stripe laser irradiates thin films, optical resonant cavity is naturally formed between two nanocrystallites along with the rectangular laser stripe and planar weveguide confines the light scattering
利用飛秒激光器作為光泵浦激發光源，研究了氧化鋅薄膜的光泵浦受激發射，當條形光斑輻照薄膜樣品時，將沿著光斑條由氧化鋅納米晶面自然地形成光學諧振腔，由於平面介質波導結構限制光散射，所以成功地觀測到二氧化硅襯底上的納米氧化鋅（ zno ）薄膜的紫外受激發射。In developing the planar lightwave circuits, the coupling loss between a waveguide with a high refractive index difference and a single mode fiber is considered. a novel spot - size converter based on a y - branch structure is proposed and numerical simulation results indicate that it can reduce the coupling loss effectively with low polarization dependent loss and good fabrication tolerance
在平面波導光器件研製中，提出了高折射率差二氧化硅波導與光纖的新型低損耗連接，與現有波導單側變窄的結構相比較，有效的降低了連接損耗，同時具有偏振相關損耗低，工藝容差性好的優點。And the value drop to the lowest at ph = 0. 8. as the increase of heat treatment temperature, the pore size distribution peak of sio2 microspheres is very narrow, meanwhile the specific surface area is the smallest before 160 c. the polymer template is removed at 350 c, so the pore structure of sio2 particles has a big change which involve the increase of specific surface area and the broaden of pore size distribution peak. with the continuous raise of temperature the sio2 network will shrink little, as a result the average pore size will decrease, but the specific surface area has no obvious change
結果發現：二氧化硅膠體顆粒均勻分佈於脲醛聚合物網路中，煅燒去除有機模板后微球表面變粗糙，而粒徑沒有明顯變化； ph值較小時，復合微球中聚合物含量較大，而ph值較大時，得到復合微球結構鬆散，因此熱處理后的二氧化硅微球孔容及平均孔徑都較大，而在ph = 0 . 8時，得到最小值；武漢理工大學碩士學位論文隨著熱處理溫度的變化，小於160時，空分佈較窄，而比表面積較小，在350時，由於有機模板的去除，微球孔結構發生突變，比表面積明顯增大，而孔徑分佈變寬，溫度繼續升高時，二氧化硅網路發生收縮，平均孔徑變小而比表面積由於有機炭化物的完全去除沒有太大變化;微球中的微孔在熱處理過程中處于平衡狀態，分佈沒有太大變化。A new similarity method in fem is presented for researching of the problems about the nonuniform and irregular region, such as micromachined microwave coplanar waveguide. by using this method, we calculate the characteristic impedances of mems waveguide and analyse the change with its different dimensions. with the use of a recurrence relation, this new method not only use much less computer ' s memory than the conventional fem, but also simplify the post - process
對低阻硅襯底上實現v型槽mems共平面波導進行了詳細深入的研究，提出並採用混合相似剖分有限元方法對不規則結構傳輸線的特性阻抗進行數值分析，在驗證了方法的正確性基礎上，進行了大量計算，並總結了常用50 、 120等阻抗傳輸線的結構參數。Based on silicon - piezoresistive method, the paper first gives the theory of array silicon piezoresistive pressure, acceleration sensor, and the design of its incorporated chip, microstructure and out - circuit. several key techniques of making array silicon piezoresistive pressure, acceleration sensor such as 1c technic, mems ( silicon - silicon direct bonding, anodic bonding, anisotropic etching ) is also studied. minuteness engine machining, anode bonding etc. in the paper there are three ways which are examine - form, curve simulanting, to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation, fusion technology etc. therefore, it providing referenced values of ways and directions for sensor system directing on
論文首先以硅壓阻效應原理為基礎，討論了陣列式硅壓力、加速度傳感器的設計原理，並對陣列式硅壓力、加速度傳感器中集成敏感晶元（壓力、加速度） 、總體結構和壓力陣列的信號處理電路進行了設計，在陣列式硅壓力、加速度傳感器的研製中，還研究了半導體平面工藝、大規模集成電路技術、微機械加工技術（硅硅鍵合、靜電封接、各向異性腐蝕）等關鍵技術的應用。分享友人