硅整流二極體 的英文怎麼說
中文拼音 [guīzhěngliúèrjítǐ]
硅整流二極體
英文
silicon rectifier diode- 硅 : 名詞[化學] silicon （14號元素符號 si）
- 整 : Ⅰ形容詞1 （全部在內; 完整） whole; all; complete 2 （整齊） neat; tidy; orderly Ⅱ動詞1 （整理; 整...
- 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
- 二 : Ⅰ數詞（一加一后所得） two Ⅱ形容詞（兩樣） different
- 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
- 體 : 體構詞成分。
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Detail specification for silicon avalanche rectifier diode
硅雪崩整流器二極體詳細規范Detail specification for silicon avalanche rectifier diodes
硅雪崩整流器二極體詳細規范Semiconductor discrete device. detail specification for silicon rectifier diode for type 2cz101
半導體分立器件. 2cz101型硅開關整流二極體詳細規范Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz73
半導體分立器件. 2cz73型硅開關整流二極體詳細規范Semiconductor discrete devices. detail specification for type 2cz10 silicon switching rectifier diode
半導體分立器件. 2cz10型硅開關整流二極體詳細規范Semiconductor discrete device. detail specification for silicon switch - rectifier diode for type 2cz75
半導體分立器件. 2cz75型硅開關整流二極體詳細規范Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz74
半導體分立器件. 2cz74型硅開關整流二極體詳細規范Blank detail specification : thyristor diodes, transient overvoltage suppressor ; german version en 150014 : 1996
空白詳細規范:二極體可控硅整流器過電壓限制器Semiconductor discrete device. detail specification for type 2cz30 silicon rectifier diode
半導體分立器件. 2cz30型硅整流二極體詳細規范Semiconductor discrete device. detail specification for type 2cz59 silicon rectifier diode
半導體分立器件. 2cz59型硅整流二極體詳細規范Semiconductor discrete device. detail specification for type 2cz58 silicon rectifier diode
半導體分立器件. 2cz58型硅整流二極體詳細規范Semiconductor discrete device. detail specification for type 2cz117 silicon rectifier diode
半導體分立器件. 2cz117型硅整流二極體詳細規范Detail specification for electronic components. ambient - rated silicon rectifier diode for type 2cz103
電子元器件詳細規范. 2cz103型環境額定硅整流二極體Detail specification for electronic components. ambient - rated silicon rectifier diode for type 2cz116
電子元器件詳細規范. 2cz116型環境額定硅整流二極體Detail specification for electronic components. ambient - rated silicon rectifier diode for type 2cz117
電子元器件詳細規范. 2cz117型環境額定硅整流二極體Semiconductor discrete device. detail specification for silicon rectifier diodes for types 2cz5550 through 2cz5554
半導體分立器件. 2cz5550 5554型硅整流二極體.詳細規范Technical specification of silicon avalanche rectification for motor vehicles
機動車用硅雪崩整流二極體技術條件Detail specifications for silicon stud mounted, power rectifier diodes
安裝于硅螺桿上的大功率整流器二極體詳細規范Different from fabricating sbd with bulk semiconductor, thin semiconductor films were utilized as the active layer in order to minimize the series resistance. si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ). the sbd with rectifying performance was developed, using si epilayer as the active layer
利用我們自行研製的超高真空化學氣相沉積（ uhv - cvd ）技術外延了亞微米級的si薄膜，成功的製作了具有整流特性的高頻薄硅肖特基二極體的原型器件。分享友人