硅模型 的英文怎麼說
中文拼音 [guīmóxíng]
硅模型
英文
exaflex injection type-
Calculations of the density of alloys based on bernal - type models of the alloys metal component agreed fairly well with the experimentally determined values from measurements on alloys consisting of a noble metal together with a metalloid, such as alloys of palladium and silicon, or alloys consisting of iron, phosphorus, and carbon, although small discrepancies remained
對于合金密度的計算，以伯納爾建立的金屬模型為基礎的計算，很大程度上等同於實驗中測量的結果，測量是針對于貴重金屬和非金屬的合金，比如說，鈀和硅的合金，或者由鐵、磷、和碳組成的合金，盡管還存在一些小的差異。The experimental results show that these models can express precisely the isotherm hydration heat emission curve of portland cement and the autogenous shrinkage process of concrete prepared with portland cement
實測數據檢驗結果表明，這2個模型可以用於模擬硅酸鹽水泥的等溫水化放熱曲線，以及用硅酸鹽水泥配製的混凝土的自收縮發展過程。Base on the mathematic model of load - deflection relationship of the rectangular membrane, micro balloon actuator ' s theory curve of pressure - deflection has been calculated and plotted. after the simplified geometric model of microactuator was set up, by utilizing ansys mooney - rivlin hyperelastic model, nonlinear structural distortion of silicone rubber can be solved
通過建立氣泡薄膜的幾何簡化模型，針對硅酮橡膠的材料非線性特點，選用了適合橡膠類材料的mooney - rivlin超彈性模型，運用ansys軟體對這一非線性結構變形進行了求解。The temperature distribution on the high temperature side of an electric tunnel furnace is analysed and simulated on the basis of the principle of thermal radiation by the way of thb ( thermal heat balance ). the heated silicon carbon sticks are decomposed into innumerable tiny heating faces, which exchange the heat with the heated materials. a numerical model based on the radiation intensity law is constructed to calculate the energy absorbed by the heated materials and simulated by a computer. the results showed that the even distribution of temperature can be obtained by optimizing the arrangement of the silicon carbon sticks according to the calculation results to make the structure design more reasonable. these calculation results have been used in the practical designs and the expected objectives achieved
利用熱輻射原理，採用熱平衡法對電熱隧道窯的高溫恆溫區溫場進行了分析和模擬.計算中將發熱棒分解為無數微元發熱面與燒結體進行熱交換，依據輻射強度定律，建立了燒結體接收能量的數學模型，並用計算機進行了模擬計算.結果表明，依據模擬結果來優化硅碳棒的排布，可使結構設計更加合理，進而可以獲得分佈均勻的恆溫區溫場.計算結果已在窯爐設計中應用，實踐效果良好In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models
對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。Through direct pullout test, we examine the effect of the water to cement ratio, contend of steel fiber and silica fume on the bond behavior ; compare the bond behavior of two types of cfrp bars with difference surface treatment ( r1 bars and g1 bars ), and reprocess the one of inferior bond strength ; investigate the bond stress distribution along the bond length of cfrp bars, and assess the adequacy of some exist analytical models of bond - slip behavior to reproduce the experimental bond behavior
本文主要通過直接拉拔試驗，考察水膠比、鋼纖維摻量、硅灰摻量以及cfrp筋的表面處理類型等材料參數對粘結性能的影響，並對粘結效果較差的cfrp筋研究了表面處理方法，以提高cfrp筋與rpc的粘結性能;通過在cfrp筋表面粘貼應變片，測定了粘結應力沿cfrp筋埋長的分佈情況，並對現有的粘結滑移本構模型與試驗結果的擬合效果進行了比較。In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur
經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon, for instance quantum confinement effect model, polysilanes model, siloxen and its derivant, surfacial states model and quantum confinement - light center model etc. in addition, study status of ps at present is addressed and applied problems in some fields are analyzed in this section
多年來，人們對多孔硅發光機理一直進行著堅持不懈的探討和研究，提出了許多種解釋多孔硅層（ psl ）發光的模型，典型的有下列幾種：量子限制模型、硅-氫鍵或多硅烷（ polysilanes ）的發光、硅氧烯及其衍生物的發光、表面態模型和量子限制-發光中心模型。A breakdown model of thin drift region ldmos with a step doping profile
器件多晶硅柵量子效應的解析模型Several methods commonly used in preparing porous silicon have been represented. photoluminescence and electroluminescence ( el ) properties of porous silicon in literature are summarized. qualitative description is given for the prevalent mechanisms proposed to explain the bright pl and el
在比較了制備多孔硅的幾種常用方法的基礎上，概括了多孔硅的光致發光（ pl ）和電致發光（ el ）特性，對目前比較流行的發光模型給出了定性的論述，展望了多孔硅的應用前景。Then the key process parameters of laser bonding, including laser power, scanning velocity, and initial temperature, are obtained with the help of scanning experiments
運用該模型計算了不同的工藝參數條件下硅玻璃的溫度場分佈，並由此得出鍵合線寬。Ln this new model, each er atom replaces a si dimer on the top layet, and every two adjacent er atoms form a pairlike smicture, with a surface vacancy being illtroduced among two adjacent er dimers
該模型中，每個鉺原子替代了一對硅二聚物，且每兩個相鄰的鉺原子形成配對的二聚物結構。同時每兩個相鄰的鉺二聚物間存在著表面空位。Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application
熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性A nueral network model for predicting the silicon content of the hot metal at no. 3 blast furnace in tangshan iron and steel co
唐鋼二煉鐵廠3號高爐鐵水硅含量神經網路預報模型Through the research of crosslinking of matrix resin, heating treatment of composite and mixing of different polymer, we draw some conclusions : 1 、 percolation theory can explain the phenomenon of the jump of resistance when the content of cb reach a critical volume ; 2 、 based on ohm conduct theory, abounded to the percolation the wbibull statistical theory and other theory, an adapted theory was obtained to explain the jump of resistance and the other phenomenon ; 3 、 the ntc phenomenon was eliminated by crosslinking the matrix of conductive composite, at the same time the stability of composite was improved
通過對基體樹脂的交聯、復合材料的熱處理、聚合物共混物的研究得出了如下的結論： 1 、滲濾理論能夠很好的解釋導電粒子含量達到某一值時電導率劇增的問題； 2 、在歐姆導電模型的基礎上，綜合應用了weibull統計理論模型，結合原來的體積膨脹等理論，成功的解釋了ptc復合材料在基體材料熔點附近的跳變問題、 ntc現象以及熱循環穩定性等問題； 3 、有機ptc導電復合材料經硅烷交聯以後能夠消除ntc現象，改善了導電復合材料的穩定性能。Based on the model, a theoretical equation for designing the thermo - insulator and a design solution of the crucible assembling system has been suggested. whereby, the designing problem in the heating system of crucible components is solved, and the graphic crucible component system in practical application is designed and manufactured. 2
通過對碳化硅生長設備中石墨坩堝系統的徑向組合傳熱問題的分析討論，建立了系統熱分析的理論模型，提出了絕熱層設計的理論依據，解決了坩堝組件熱系統的設計問題並設計製作了實際應用的石墨坩堝組件系統。Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design
根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。( 3 ) box model results indicate that the net flux of suface water, flowing into the south china sea, is about 8. 364x 106t / s and the net flux of water, which is under suface water, flows out of the south china sea at about 8. 229x 106t / s on annual average. the quantity of din, reactive phosphate or reactice silicate, which sinked into deep water in the form of particle matter, was about 78, 71 and 80 percent of total quantity of din, reactive phosphate and reactive silicate, which flowed into suface water in any ways. but in these particle matters, ahout2. 9 percent of particle nitrogen, 2. 0 percent of particle phosphor and 8. 2 percent of particle silicon sinked into sediment
（ 3 ）據「箱式模型」估算年度平均南海表層水通量約為8 . 364 10 ~ 6t s的凈輸出，表層之下水體約有有8 . 229 10 ~ 6t s的凈輸入；同時到達表層溶解態無機氮、活性磷酸鹽和活性硅酸鹽總量中約有78 、 71和80隨顆粒物質下沉到深海；其中未被分解而進入海底沉積物的顆粒態氮、磷和硅僅占由表層沉降深海顆粒態氮、磷和硅的2 . 9 、 2 . 0和8 . 2 。In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet
本文通過求解自洽薛定諤方程，確定了應變硅mosfet反型層的子能帶結構，在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率，綜合考慮各子能帶上的載流子的濃度分佈，建立了應變硅mosfet載流子遷移率的解析模型。分享友人