硅氫化 的英文怎麼說

中文拼音 [guīqīnghuà]
硅氫化 英文
hydrosilylation
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 氫 : 名詞[化學] （氣體元素） hydrogen （h）
  1. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  2. Fabrication of hydrogenated microcrystalline silicon thin films at low temperature by vhf - pecvd

    法氫化微晶硅薄膜的低溫制備
  3. Progresses in research on asymmetric hydrocyanation, asymmetric hydroformylation, asymmetric cross - coupling reaction and asymmetric hydrosilylation catalized by palladium - chiral phosphine - catalyst systems are reviewed with 36 references

    綜述了鈀手性膦配體催化劑在烯烴的不對稱氫氰化、不對稱羰基化、不對稱交叉偶聯、不對稱氫化硅氫化等方面的研究進展。參考文獻36篇。
  4. Light degradation stability of a - si : h films

    氫化非晶硅薄膜光衰退穩定性的影響因素
  5. In this experiment, we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft

    本實驗在沉積柵氧化層后立即用pecvd進行多晶硅的氫化處理。
  6. The results show that : the fillers of sio2 based investment consist of sio2, al2o3 and mgo, and the binder is nh4h2po4 for sio2 based investment, the bulk density and the compression strength decrease, the apparent porosity and the thermal expansion increase, when the specimens are heated to 900 ; the fillers of al2o3 based investment consist of al2o3 and mgo, and the binder is nh4h2po4 ; for al2o3 based investment, the bulk density decreases and the apparent porosity increases when the specimens are heated to 900 ; the fillers of mgo based investment consist of mgo and al2o3, and the binder is ca cement ; for mgo based investment, the compression strength decreases and the thermal expansion increases greatly when the specimens are heated to 900

    結果表明：氧化硅系包埋料的骨料是氧化硅、氧化鋁、氧化鎂，結合劑為磷酸二氫銨，其900鍛燒后顯氣孔率增加，體積密度下降，耐壓強度降低，熱膨脹增大；氧化鋁系包埋料的骨料是氧化鋁和氧化鎂，結合劑為磷酸二氫銨，其900燒后顯氣孔率增加，體積密度下降，熱膨脹變化不大；氧化鎂系包埋料的骨料是氧化鎂和氧化鋁，結合劑是鋁酸鈣水泥，其900燒后耐壓強度明顯降低，熱膨脹明顯增大。
  7. Using silicon dioxide, magnesia, aluminum hydroxide to react with sulfonic acids, color fixatives under standard proportioning, through curing and drawing into thread - like form, this product is made with mechanical twisting as per specific speed and number of strands after drying treatment, featruing a certain tensile strength

    本品用二氧化硅、氧化鎂、氫氧化鋁同磺酸、固色劑等按標準配比反應，經固化抽制線狀，再經乾燥處理后，並按規定速數和股數，經機械加捻而成，並有一定的抗拉強度。
  8. We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation. in general, hydrogenation is prepared after completing of tft, in this way, we need more radio frequency power and time, so the cost of hydrogenation will raise

    而通過氫化可以大大降低多晶硅薄膜晶粒邊界中的懸掛鍵和界面陷阱，從而顯著提高tft的場效應遷移率和開態電流，減少關態電流，提高tft的電學性能。
  9. Basic silicones for industrial use. determination of hydroxyl groups. methods by reduction with lithium - aluminium hydride

    工業用基礎硅塑料.羥基類的測定.氫化鋁鋰還原法
  10. Ammonia played a critical role in the vertical alignment of cnts, and the possible reason was that in 850 the atomic hydrogen decomposed from ammonia reacted with amorphous carbon to form volatile products to keep the metal surface clean, and mechanical leaning against neighboring tu bes established a morphology of vertical alignment

    當基體為單晶硅、催化劑鎳膜厚度為20nm 、氨氣氣氛、生長溫度為850時，得到了定向生長的納米碳管。其原因可能是850時氨氣分解的氫原子和無定形炭生成了易揮發物質，從而保持催化劑的活性使納米碳管依靠相鄰碳管之間的斥力定向生長。
  11. In this way, parameters are prone to control, and hydrogenation ion will not escape without high temperature. in the process of hydrogenation by pecvd

    並且在後面工藝中沒有高溫工藝，這樣就使得氫化后進入多晶硅的氫不會因為高溫而逸出。
  12. Asymmetric hydrosilation of acetophenone catalyzed by a chiral thiazolidine - rhodium complex

    配合物催化的苯乙酮不對稱硅氫化反應
  13. Advances in asymmetric hydrosilylation of prochiral carbonyl compounds catalyzed by chiral transition metal complexes

    手性金屬配合物催化的前手性羰基化合物的不對稱硅氫化反應研究進展
  14. Abstract : recent advances in asymmetric hydrosilylation of prochiral carbonyl compounds catalyzed by chiral transition metal complexes are reviewed in this paper with 47 references

    文摘:評述了近年來手性金屬配合物催化的前手性羰基化合物的不對稱硅氫化反應研究進展。
  15. Abstract : the kinds, structures and catalytic properties of polymer metal catalyst for hydrosilation were reviewed

    文摘:綜述了硅氫加成反應中高分子金屬催化劑的種類、結構及其催化性能。
  16. To hydrogenated amorphous silicon ( a - si : h ), however, it has much less defects than non - hydrogenated a - si, for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond. with these virtue, a - si : h accord with device quality. the films of a - si : h have widely used in solar cell, film transistor and flat display

    對于氫化非晶硅（ a - si : h ） ，由於氫通過無連接端的硅原子鍵合來消除缺陷，使得氫化非晶硅的缺陷密度比未氫化的非晶硅大大降低了，從而使氫化非晶硅符合器件級質量材料的要求。
  17. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
  18. Mwecr - cvd system with a new magnetic field and deposition of a - si h films

    和氫化非晶硅薄膜制備
  19. Analysis of water used in boiler and cooling system - determination of total silicon - photometric method by conversion with hydrofluoric acid for low silicon

    鍋爐用水和冷卻水分析方法全硅的測定低含量硅氫氟酸轉化法
  20. Since swe is found, it always prevents the a - si : h films from farther developing. based on ago theory model and our experiment results, we

    自從sw效應發現以來，這種亞穩特性一直制約氫化非晶硅薄膜在應用過程中地進一步發展。
分享友人
分享到 Line

分享到臉書