硅生的 的英文怎麼說

中文拼音 [guīshēngde]
硅生的 英文
silicolous
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 的 : 4次方是 The fourth power of 2 is direction
  1. Biogenic silica ( bsi ) is produced in the euphotic zone of the ocean by siliceous plankton such as diatoms or radiolarians

    生物硅（ bsi ）的積累反映了生產力的長期和空間變化，它同時和全球c循環有著密不可分的關系。
  2. Abstract : by examining the technical processes of the cold - press dies on silicon - steel plates by metalloscope, the causes of cracks in the cold - press dies are analyzed, from which technical measures that are used to avoid cracking are derived

    文摘:通過對硅鋼片冷沖模各加工工藝的檢查和金相顯微觀察，分析了冷沖模產生裂紋的原因，並提出了防止裂紋產生的工藝措施。
  3. The asr was designed to be surgically implanted under the retina and to produce visual signals similar to those produced by the photoreceptor layer

    人造硅視網膜是通過外科手術植入視網膜的下面，產生的可視信號與光感受層產生的可視信號相似。
  4. Synthesis of poly methyl trifluoropropyl siloxane and its crosslinking characteristics

    氟硅生膠的合成及交聯特性
  5. Ore minerals in the colorado-type deposits are of uraninite and coffinite, with associated vanadium and copper minerals.

    科羅拉多型礦床中的鈾礦物為晶質鈾礦和水硅鈾礦，與之共生的還有釩，銅礦物。
  6. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。
  7. The variation of nutrients in the survey area is mainly controlled by the combination of changjiang dilute water, taiwain warm current and the activity of plankton as well, and the control mechanism of nutrients also shows a seasonal variation in the survey area

    42 . 52 . 6于促進硅藻的生長，較低則相對有利於甲藻生長:同時加磷對小型浮遊動物的生長也有一定的從促進作用。
  8. It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance

    在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。
  9. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  10. Wollastonite is also used as : protective slag in casting ; sillicon - steel ; electrode coating ; lagging material ; ceramic moulds and bonding agent for abrasives a filling agent in paper making, the trace mineral in the production of white cement and special electric ceramics

    硅灰石還是模鑄硅鋼的保護渣，電焊條的塗料，陶瓷鑄模，生產研磨材料和靡輪黏合劑，造紙的充填劑，生產白水泥，製造特殊電氣陶瓷等不可多得的礦物原料。
  11. Based on the model, a theoretical equation for designing the thermo - insulator and a design solution of the crucible assembling system has been suggested. whereby, the designing problem in the heating system of crucible components is solved, and the graphic crucible component system in practical application is designed and manufactured. 2

    通過對碳化硅生長設備中石墨坩堝系統的徑向組合傳熱問題的分析討論，建立了系統熱分析的理論模型，提出了絕熱層設計的理論依據，解決了坩堝組件熱系統的設計問題並設計製作了實際應用的石墨坩堝組件系統。
  12. The surface modification with silicon coupling reagent to ultrafine silicon dioxide, which roots in waste production in fiber manufacturing, was investigated in this paper

    摘要以通信光纖生產中產生的超細二氧化硅顆粒廢料為原料，經水純化處理后，用硅烷類偶聯劑對其表面進行化學改性。
  13. The nanoporous silicon membrane can be used as drug carrier, immuniosolating biocapsules, nanoporous silicon micromirror and biosensors in medical field

    在醫學上的納米多孔硅膜可作為藥物載體、免疫隔離生物膠囊、納米硅微鏡和納米多孔硅生物傳感器。
  14. Because the concentration of zirconium in uranium has large ranges, from 1. 50xlo ' 6 - 3. 8g / gu, not only how to decrease the remainder of uranium to eliminate its determinate effect but also how to acquire higher recovery of zirconium is considered, so the method of silica gel, the method of tbp levextrel resin chromatography, the method of tta chromatography and the method of tta extraction are compared. then tta extraction is chosen to acquire the ideal separation purpose. compared with icp - ms and icp - aes, xrf has characters of high repeatability, stability, low cost, high concentration elements analysis, the ability to determinate solid sample and having comprehensive practicability, but xrf has lower sensitivity, so how to increase the concentration of the sample to acquire better precision is a difficult problem, the optimum of operating condition : the integral time of spectral lines is 60s, the integral time of background lines is 20s, the voltage of xrf is 50kv, the electric current is 50ma

    由於鈾中鋯的含量范圍很廣，從1 . 50 10 ~ （ - 6 ） 3 . 8g / gu ，在分離和測量時，既要考慮盡量地減少鈾的殘留量以消除鈾對鋯測量產生的影響，又要獲得鋯的理想的回收率，因此本文在分離方法的選擇上比較了硅膠吸附分離法， cl - tbp萃取色層法， tta萃取色層法和tta萃取分離法的優缺點，認為tta萃取分離法可以達到理想的分離效果。
  15. Longitudinal crack formed when screw steel rebar is cold - bended was analyzed. the result indicates that ununiformly distributed silicate inclusions contributed to the longitudinal crack. protective measurements were also provided

    摘要對螺紋鋼筋由冷彎產生的縱向裂紋進行了分析，結果表明，硅酸鹽夾雜物分佈不均勻是造成螺紋鋼筋冷彎縱向裂紋的主要原因，並提出了相應的預防措施。
  16. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  17. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  18. Standard specification for corrosion - resistant high - silicon iron castings

    耐腐蝕的高硅生鐵鑄件的標準規范
  19. Abstract : the main shortages in mnsi surface and the reasons are analysed, the measures to improve mnsi surface quality and to reduce the loss by the surface defect are put forword

    文摘:分析了錳硅合金表面質量的主要缺陷及其產生的主要原因，提出了改善錳硅合金表面質量，減少因表面質量缺陷而造成損失的措施。
  20. A driving signal with a dc bias voltage and ac voltage is usually necessary for sensing very small capacitance. the reliable operation conditions of the capacitive sensor for foreign acceleration had been researched with the assumption of the parallel comb plates. but the comb plates are actually not parallel for the reason of the drie process

    前人在研究外界加速度信號對傳感器的作用時，假定驅動信號產生的靜電力作用在平行梳齒電容極板上，但是，在用drie工藝對硅進行刻蝕時會產生側蝕效應，從而得到的梳齒電容有一定的傾斜角度。
分享友人
分享到 Line

分享到臉書