硅石模數 的英文怎麼說

中文拼音 [guīdànshǔ]
硅石模數 英文
silica modulus
  • : 名詞[化學] silicon (14號元素符號 si)
  • : 石量詞(容量單位, 十斗為一石) dan, a unit of dry measure for grain (= l00 sheng)
  • : 模名詞1. (模子) mould; pattern; matrix 2. (姓氏) a surname
  • : 數副詞(屢次) frequently; repeatedly
  • 模數 : [物理學] modulus; module; modulo; mod
  1. We have many industry automize instruments such as temperature transmitter ( integrate temperature transmitter module ( double temperature transmitter module ), integrate temperature transmitter, track isolation temperature transmitter, hanging temperature transmitter, pressure transmitter ( expanding silicon pressure transmitter, sapphire pressure transmitter, spraying ( metal slim film ) pressure transmitter, strain pressure transmitter, ceramic resistor, capacitance pressure transmitter, 1151 and 3151 series pressure transmitter, fluid location transmitter module ( specializing for fluid location meter ), collocated electricity meter ( sigle round, double round ), signal isolation ( single round, double round ), transducer ( temperature, pressure ), display head ( showing 100 % scale, lcd fluid crystal, led digital display ), numerical instrument and so on

    產品有溫度變送器(一體化溫度變送器塊(雙支溫變塊) 、一體化溫度變送器、導軌式隔離溫度變送器、壁掛式溫度變送器、架裝式溫度變送器) 、壓力變送器(擴散壓力變送器、藍寶壓力變送器、濺射式(金屬薄膜)壓力變送器、應變式壓力變送器、陶瓷電阻、電容壓力變送器、 1151 、 3151系列壓力變送器) 、液位變送器塊(專為液位計廠配套) 、配電器(單迴路、雙迴路) 、信號隔離器(單迴路、雙迴路) 、傳感器(溫度、壓力) 、配變送器的顯示表頭( 100刻度顯示、 lcd液晶顯示、 led碼顯示) 、字儀表等工業自動化儀器儀表。
  2. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參的精確控制,以控制沉積過程,減少金剛膜生長過程中的缺陷,並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子體溫度場綜合型、復合介質基片材料的復合溫度場型及復合介質材料溫度場攝動型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離體化學氣相沉積金剛的成核與生長研究,系統地研究了在( 100 )單晶基片上mpcvd沉積金剛膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參對金剛薄膜質量的影響,分別用raman光譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射光譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛膜的最佳的實驗工藝參
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