硅膜 的英文怎麼說

中文拼音 [guīmó]
硅膜 英文
silicon film硅膜集成電路 silicon film ic
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  1. Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target

    本文研究用脈沖激光燒蝕石墨靶方法在單晶硅、 k9玻璃等襯底上生長超硬非晶碳膜。
  2. Workplace air. x - ray determination of the conventional alveolate fraction of crystalline silica. sampling by membrane filter

    工作場所空氣. x射線測定結晶二氧化硅的常規蜂窩狀部分.用薄膜過濾器取樣
  3. The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void

    Fpds端部八面體空洞的消失分為兩個階段： （一）覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子，尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入，而逐漸變薄直至最終消失。 （二）無氧化膜的空洞，在高溫下發出一個個空位，同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部，使空洞逐漸變淺直至最後消失。
  4. The obtained polysilane - polyacrylate gradient films showed no macro - interface with the silicone content reducing gradually from the top surface to the bottom one. dma thermograms indicated that polysilane - polyacrylate gradient films contained two glass temperatures with their bands drifting from and their range extending much from each component. the good properties of waterproof, calorifics, and ultraviolet - absorption were also determined by dsc, uv and water contact angle measurements

    結果表明：有機硅聚合物-聚丙烯酸酯梯度膜有一個較寬的玻璃化轉變溫區，玻璃化轉變范圍相對組分材料的玻璃化轉變范圍發生了擴展：有機硅聚合物-聚甲基丙烯酸酯梯度膜具有較好的熱學性能；硅含量的提高有利於改善膜層的憎水性能和紫外吸收性能。
  5. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  6. On the base of these theory calculations, we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2. the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration. the majority of improvement in comes from the emitter surface passivation

    接著採用sio2作為鈍化膜，從實驗上比較了在不同表面濃度下單晶硅太陽電池的鈍化效果，結果表明在高表面濃度下其開路電壓比低表面濃度下的開路電壓低，這開路電壓的提高主要來源於降低了前表面復合。
  7. Preparation and performance of pdms membranes for pervaporation desulfurization

    有機硅膜的制備及其滲透汽化脫硫的研究
  8. Preparation of silicone polymer membrane for separation of solvents from lube oil

    分離潤滑油中脫蠟溶劑的有機硅膜的制備
  9. Fractal phenomenon during fabricating ultrthin silicon membrane using etching - stop

    硅腐蝕停止技術制備超薄硅膜中的分形現象
  10. Short communication electro - red - luminescence from silicon oxide films embedded nm carbon particles and nm silicon particles

    鑲嵌納米碳粒和硅粒氧化硅膜的電致紅光發射研究
  11. The nanoporous silicon membrane is thermally, chemically, mechanically stable and retrievable and can he reused

    納米多孔硅膜具有優異的耐熱性和化學穩定性，且可回收利用。
  12. In this paper, the research of the dielectric isolation of over - 20 m - film soi is concentrated on the structure, technology and experiment

    論文對硅膜厚度大於20 m的soi介質隔離問題從結構、工藝和實驗三個方面進行了深入研究。
  13. The nanoporous silicon membrane can be used as drug carrier, immuniosolating biocapsules, nanoporous silicon micromirror and biosensors in medical field

    在醫學上的納米多孔硅膜可作為藥物載體、免疫隔離生物膠囊、納米硅微鏡和納米多孔硅生物傳感器。
  14. Fabricating the nanoporous silicon membrane with nanotechnology and bio - mems technology, the thickness of membrane, pore size and distribution, geometry shape and porosity can precisely controlled

    摘要採用納米技術和生物微電子機械繫統技術制備納米多孔硅膜，可準確控制膜的厚度、幾何形狀、孔大小、孔分佈和孔隙率。
  15. Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design

    根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。
  16. The paper is mainly focused on two fields. one is the formation of any thick porous silicon ( ps ) layers, which is content with 1c process. the other is the low - loss performance of passive elements fabricated on ps / oxidized porous silicon ( ops ) inter - layers under microwave operation

    本論文主要的研究內容分為兩個方面：其一是厚度可控的與ic工藝兼容的多孔硅膜的形成技術研究；其二是研究在多孔硅氧化多孔硅介質膜上制備無源器件的微波低損耗特性之可行性。
  17. The technologies i explored consist of photolithography technology, lift - off lithography process, technology of growing silicon dioxide films using sol - gel coating technique, and fabrication of na + - k + ion - exchanged glass waveguide. in this thesis, the experiment principles were investigated and the experimental results were given and discussed

    本論文中具體研究的工藝內容有：光刻的工藝參數研究；剝離法光刻工藝的研究；用溶膠凝膠法制備二氧化硅膜； na ~ + - k ~ +離子交換玻璃波導的製作。
  18. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  19. Note 4 : 0. 1 grade precision can be realized only if it is employed the membrane material of super stable diffusion silicon

    注4 : 0 . 1級精度要選用超穩定型擴散硅膜片材料a2才能實現。
  20. Note 5 : 0. 1 grade precision can be realized only if it should be employed the membrane material of super steady diffusion silicon

    注5 : 0 . 1級精度要選用超穩定型擴散硅膜片材料a2才能實現。
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