硅鋁層 的英文怎麼說

中文拼音 [guīlǚcéng]
硅鋁層 英文
sal
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 鋁 : 名詞[化學] aluminium （13號元素, 符號al）
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  1. The intense eluviation and weathering of soil with groundwater and run - off result in the enhancing of capacity of transference of some elements, such as si, al, fe, mn. the chemical reactions of the colloid particles in the soil water make those crannies or holes filled by some epigenetic clay minerals and quartz. then a great deal of white reticulate clay comes into being in the quaternary laterite of the dongting basin

    地下水和地表水強烈的淋溶作用使土壤中硅鋁鐵錳等元素的遷移能力增強，土壤膠體粒子之間的化學反應，使得這些孔隙空間在後期逐漸被次生黏土礦物和石英所充填，最終，在洞庭盆地第四系紅土地層中形成大量的蠕蟲狀和根狀白色網紋。
  2. The microstructure of as - deposit hypereutectic ai - si - cu - mg alloy is composed of particulate - shaped si particle and equiaxed grain a - al and few interstices

    多層噴射沉積高硅鋁合金的顯微組織由- al基體，初晶硅及孔隙組成。
  3. They do not have an illuvial horizon enriched with either silicate clay or with an amorphous mixture of aluminum and organic carbon

    沒有富含硅酸鹽粘土或鋁有機碳非晶質混合物的淀積層。
  4. Continuous hot - dip aluminium silicon - coated cold - reduced carbon steel sheet of commercial and drawing qualities

    商業和拉伸質量用連續熱浸鋁硅鍍層碳素鋼薄板材
  5. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  6. Investigation of adsorption behavior of layered silicate montmorillonite

    層狀鋁硅酸鹽材料蒙脫土的吸附行為研究
  7. It adopts the intermediate frequency power ; it not only can plate single films or multilayer membrane, such as titanium nitrides, titanium carbide, zirconium nitrides, chromium nitride, titanium, nickel, chromium and copper etc. but also can plate the ito, al2o3, sio2, tio2 and zro etc. furthermore, it can plate multilayer membrane after being equipped with multi - targets with top grade quality and fast speed, as well as advantages of other plating methods ; therefore it is one super - hard membrane equipment with excellent performance

    採用先進的中頻電源，濺射速度快，不但可以鍍制氮化鈦碳化鈦氮化鋯氮化鉻及鈦鎳鉻銅金銀等等單一膜層或復合膜層，而且可以鍍制銦錫合金ito氧化鋁al2o3二氧化硅sio2氧化鈦tio2氧化鋯zro等等膜層，另外其配置多靶可以鍍制多層膜，不但鍍制膜層細膩而且鍍制速度非常快，兼有其他鍍法的優點，所以是一種性能非常優良的鍍制超硬膜設備。
  8. Continual hot - dip aluminium zinc silicon alloy coated steel strips and sheets

    連續熱浸鍍鋁鋅硅合金鍍層鋼帶和鋼板
  9. In this paper, finite element software ansys is used to simulate the thermal conductivity and pressureless infiltration technique is used to produce aluminum infiltrated silicon carbide composite with high volume fraction of sic. the influence of interfacial thickness and temperature on thermal conductivity and cte have been investigated and analysed

    本文採用有限元軟體ansys對鋁滲碳化硅復合材料的有效熱導率進行了數值模擬，用無壓浸滲法制備了高體積分數的鋁滲碳化硅復合材料，研究了界面層厚度和溫度等對鋁滲碳化硅復合材料的熱導率和熱膨脹系數的影響，並進行了分析。
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