磁控濺射 的英文怎麼說
中文拼音 [cíkòngjiànshè]
磁控濺射
英文
magnetron sputtering-
Excellent results have been obtained by using dc magnetron sputtering technology. a solar absorptance of 0. 94 - 0. 96 with an emittance of 0. 04 - 0. 06 at 100 has been achieved
磁控濺射技術的準確結果顯示這種真空管在100時能夠達到吸收率： 0 . 94 - 0 . 96Copper has been deposited on surface of the al mmcs as interlayer by magnetron sputtering, tlp bonding of al mmcs with these interlays, the joints shear strength of tlp bonding using deposited film was as much as the joint shear strength of tlp bonding using cu foil. removing the oxidation on the surface before deposition, copper was coated by magnetron sputtering as tlp bonding interlayer
待連接表面通過磁控濺射法沉積銅膜作為中間層進行瞬間液相連接，得到的接頭強度與銅箔中間層進行瞬間液相連接得到的接頭強度相當，而使用磁控濺射法去除待連接表面氧化膜后沉積銅膜作為中間層進行瞬間液相連接的接頭強度提高7 . 6左右。Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。Research of unbalanced magnetron sputtering system
非平衡磁控濺射系統的研究Magnetron sputtering target source and sputtering procedure
磁控濺射靶源設計及濺射工藝研究Compound medium wave - guide film on columned li - ferrites was made by magnetron sputtering system
用磁控濺射的方法在圓柱鋰鐵氧體表面鍍覆了復合介質波導薄膜。The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering
確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature
第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。High quality nickel films have been successfully plated on cenosphere particles by dc magnetron sputtering at mom temperature
摘要本文論述了在空心微珠表面磁控濺射鍍金屬薄膜的方法。We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem
論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。The evacuated tube is similar to a conventional dewar flask and consists of two borosilicate glass tubes, a glass with high chemical and thermal shock resistance. the outer side of the inner tube is coated with a sputtered solar selective surface
真空玻璃管和傳統意義上的真空玻璃細頸瓶是相似的，它由兩層高強度耐沖擊性的高硼硅玻璃組成，內管外壁是磁控濺射選擇性吸收塗層。The zircondri filin wtut rirconia wa prepared and the removing technology of the zirconia on the zirconium sdrices was obtalned. the methods of chemistry and magnetron sputtring plating were used in order to platc a palladium film, which is characteristic of self catalysis for hydrogen and the sole h - permselectivity on the clean rirconium sdrices prepared by the methods of electrochemitw and ( or ) high temperatur vacuum hydrgenization, which was firstly studied. the plating tedrilogy was obained and the surface modified zirconium membran was prepared
在利用電化學法和真空高溫除氧加氫法去除了鋯表面氧化膜的基礎上，分別採用化學法、磁控濺射法兩種鍍膜技術在其表面上鍍上了一層對氫具有自催化分解、唯一選擇滲透性的金屬鈀膜，首次獲得了鋯基材膜表面上鍍鈀的制備工藝，成功制備了鋯表面改性選擇滲氫膜。All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate
本文用射頻反應磁控濺射制備了高度c軸擇優取向的zno薄膜，採用原子力顯微鏡（ afm ） 、 x射線（ xrd ） 、 hall測試儀、紫外?可見分光光度計和x光電子能譜等分析測試手段，研究了樣品的表面形貌、晶體結構、光學和電學性能等。Our factory specializes in manufacturing cabinet vacuum coaters, magnetic control sputter coaters and vacuum exhaust equipments, industrial boiler, all kinds of valves, coaters and press packer specially used in the industry of quartz crystal
我廠是國內專業生產箱式真空鍍膜機、磁控濺射鍍膜機、真空排氣設備、石英晶體行業專用被銀機和壓封機、工業爐及各種真空閥門設計製造的專業廠家。General specification for magnetic sputtering equipment
磁控濺射設備通用技術條件To discuss the technological project of setting up many ethernets
磁控濺射真空制膜技術Dielectric loss of amorphous alumina films grown by reactive rf magnetron sputtering
磁控濺射法制備氧化鋁薄膜及其介電損耗In this paper, several thin films samples of vanadium oxide were got by high - frequency magnetron sputter with pure metal vanadium as sputter source
本文以高純金屬釩作為靶材，採用磁控濺射工藝制備氧化釩薄膜。The deposition of a titanium - containing diamond like carbon ( ti - dlc ) film was performed with the unbalanced magnetron sputtering process. chromium molybdenum steel aisi 4118 in a quenched and tempered condition was used as substrate
本文採用非平衡磁控濺射方法在調質處理后的aisi4118鉻鉬鋼表面沉積了含ti類金剛石（ ti - dlc ）膜。In the process of sputtering, it is important to characterize the thickness and residual stress of plct films. in experiment. through the technology of x - ray
基於掠入射x射線衍射（ gixrd ）的殘余應力測量表明，射頻磁控濺射plct薄膜中為壓應力。分享友人