磁膜組件 的英文怎麼說

中文拼音 [címózǔjiàn]
磁膜組件 英文
thin film magnetic module
  • 磁 : 名詞1. [物理學] （磁性; 能吸引鐵、鎳等的性質） magnetism 2. （瓷） porcelain; china
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 組 : Ⅰ名詞1 （由不多的人員組成的單位） group 2 （姓氏） a surname Ⅱ動詞（組織） organize; form Ⅲ量詞（...
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 組件 : assembler
  1. 3, the output linear resolution of the bridge is about to 0. 84 % and has a better property in comparison of some typical mr angular sensors. 4, the output sensitivity of the bridge is about 1. 0667mv / and better than ferrimag angular sensors

    4 ，該自旋閥晶元組成的橋路輸出的靈敏度達到了1 . 0667mv ，相對于強磁性薄膜為敏感元件的角度傳感器有了很大的提高。
  2. Air filtration portfolio, air filters, valve, oil mist machine, filter valve, oil mist separator, micro - mist separator, stability activated solenoid valve, pressure gauge, micro - valve and vacuum valves, links the release of the closure - pressure valves, and pipe connection, a one - way valve, t - shelves, shelves, brackets, diaphragm - type flow switches, blades type flow switches, further growth actuator, the valve lock, precision valve, pressure switches, mechanical pressure switches, pneumatic control ratio positioning devices, and electric - gas ratio positioning devices, and telecommunications - pressure converters, electro - pneumatic proportional valve, filter valve, shuttle valve, gas - electric relay and gas indicator, delay pneumatic valve and cylinder fcl, plumbing fcl, mufflers and exhaust cleaner, the excess flow valve with silencer, a one - way valve, rapid valve, rapid joints, rapid valve with fcl, rapid joint sub - cluster gas, micro joints, gas pipes, pipe from the devices, and helical coils, pipes, channels, scissors, multiple fastener, high - speed rotary joint, 10000 threaded joints, and insert the tube joints, rotary joints began, 68. 25 rapid joints and hoses, hose fittings and rapid non - electrostatic

    空氣過濾組合空氣過濾器減壓閥油霧器過濾減壓閥油霧分離器微霧分離器穩定啟動電磁閥壓力表微型減壓閥減壓氣閥三通釋放式截流閥壓力開關管接頭單向閥t型隔板隔板托架膜片型流量開關漿葉型流量開關增速繼動器鎖定閥精密減壓閥壓力開關機械式壓力開關氣控比例定位器電-氣比例定位器電訊號-氣壓轉換器電-氣比例閥過濾減壓閥梭動閥氣-電繼電器氣源指示器氣動延時閥氣缸限流器管道限流器消聲器排氣潔凈器限流閥帶消聲器單向止回閥快速排氣閥快速接頭快速排氣閥帶限流器快速接頭集束分氣微型接頭氣喉管喉管脫離器螺旋管排管管道剪刀多管扣件高速旋轉接頭萬用螺紋接頭插入式管接頭旋式緊鎖接頭難燃性快速接頭和軟管不帶靜電快速接頭和軟管
  3. The inductor, which is one of the most important magnetic components, is not only used in lc filter and choke but also in rf communication circuit. the thin film inductor can be integrated with semiconductor components, so far it has not been widely used in these fields, the reason is the limited of thin - film material and substrate, process technology and design technology. designing and fabricating thin film inductor is the key point of this paper

    而作為磁性元器件中最重要的電感，它不僅在lc濾波電路、扼流圈中必不可少，在現代射頻通信電路中也被廣泛使用，特別是能與硅器件一起集成的薄膜電感器，在國際上備受重視，而國內長期以來，由於受薄膜磁芯材料、繞組材料、基片材料，包括製作技術及最為關鍵的設計技術限制，尚未研發出能夠用於這一應用領域的高、中、低頻薄膜電感器。
  4. Combined with special wettability properties, a - c films may have greater potential applications. in present thesis, a series of a - c films were prepared by magnetron sputtering technique on substrates as si ( 100 ) and glass, and the deposited processes were controlled to adjust the morphology of the surfaces of a - c films. to further obtain the desired wettability, surface chemistry compound of the lotus - like surfaces were plasma modified by optimized processes

    本文採用磁控濺射系統在普通玻璃和單晶硅上獲得了具有不同表面形貌特徵的非晶碳薄膜，此外利用等離子體表面處理系統，通過改進工藝方法，優化工藝條件，對非晶碳薄膜表面化學組成進行調控，獲得了潤濕性能從超親水到超疏水范圍變化的表面。
  5. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
  6. During the inspection by afm and sem, we found that the surfaces morphology of samples was even and smooth, the surface roughness was small. the films were composed of some excellent columnar crystallites. the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching

    由以上對azo薄膜的組織結構和光電性質的研究，我們得到了用直流反應磁控濺射法制備azo薄膜的最佳工藝條件為:氧氬比0 . 3 / 27 ，襯底溫度200 ，工作壓強5pa ，靶基距7 . 5cm ，功率58w ，退火溫度400 。
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