禁帶寬度 的英文怎麼說

中文拼音 [jīndàikuān]
禁帶寬度 英文
energy gap
  • : 禁動詞1. (禁受; 耐) bear; stand; endure 2. (忍住) contain [restrain] oneself
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  1. But the seebeck coefficient was reduced by pd - substituted because of the interdict band width was reduced

    Pd的取代也同時使zrnisn基化合物的禁帶寬度減小,降低了體系的seebeck系數。
  2. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ,激子束縛能為60mev ,具備了室溫下發射紫外光的必要條件,在紫外探測器、 led 、 ld等領域有著巨大的發展潛力; zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  3. Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively.

    例如,硅和鍺的禁帶寬度分別為11電子伏和065電子伏。
  4. Modulation on widening photonic forbidden band of one - dimensional photonic crystal by optical thickness

    光學厚對一維光子晶體禁帶寬度的調制
  5. Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively

    例如,硅和鍺的禁帶寬度分別為1 1電子伏和0 65電子伏。
  6. For n - doped tio _ ( 2 ), the forbidden band was divided into two ' s, and the cut - off wavelength and the application of solar energy was increased too

    對于n摻雜tio _ 2薄膜來說,禁帶寬度裂分為兩個「表觀」禁帶寬度,大大提高了截止波長,提高了對光源的利用率。
  7. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體( - al _ 2o _ 3 )不僅由於其色澤艷麗成為人們珍愛的名貴寶石,而且由於它具有的優異性能,被廣泛應用於電工、機械、激光器,光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體調諧激光材料,用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接半導體材料(禁帶寬度3 . 37ev ) ,現已發現具有室溫下受激發射特性,有可能實現室溫下半導體紫外發光。
  8. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ,以降低柵泄漏電流和改善可靠性,其中, hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導和價較大的偏置、以及與si的高的熱力學穩定性等特徵,被認為是最有希望的替代sio _ 2的柵介質材料之一。
  9. After some band structure analysis with the fast method, some interesting results are found for a 2d photonic crystal formed by a rectangular lattice of dielectric material gaas ( e = 11. 4 ) and air

    對一種長方晶格結構的光子晶體,通過反復調節介質柱的長、和晶格的長、,得到該結構最大絕對禁帶寬度= 0 。
  10. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的半導體材料一sic ,因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性,被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  11. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的隙材料,具有禁帶寬度大( 3 . 4ev ,遠大於si的1 . 12ev ,也大於sic的3 . 0ev ) ,電子漂移飽和速高,介電常數小,導熱性能好等特點,在光電子器件和電子器件領域有著廣泛的應用前景。
  12. Base on two - stage approach, we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films. the study proves that it is favorable to prepare bn thin films of high cubic phase content. depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively

    根據si片上bn薄膜的反射光譜r ( )和熔融石英片上bn薄膜的反射光譜r ( )和透射光譜t ( )各自獨立的計算了bn薄膜的光學隙,利用兩種方法分別計算立方相含量均約為55 %的bn薄膜的禁帶寬度為5 . 38ev和5 . 4ev ,其結果均和由經驗公式計算得到的結果非常接近。
  13. The band gap calculation of wide - gap ternary compound nitride semiconductors in group

    含氮三元混晶半導體禁帶寬度的計算
  14. The bandgap energy of ar gas c60 thin film is 2. 24 ev, and the bandgap energy of n2 gas film is 2. 09 ev. both are larger than that of vacuum c60 thin films ( 2. 02 ev )

    用直接躍遷吸收邊關系得出在氬氣和氮氣中制備的c60薄膜的禁帶寬度分別為2 . 24ev和2 . 09ev ,均比在真空下生長的c60薄膜禁帶寬度( 2 . 02ev )要大。
  15. Tin sulfide ( sns ) has an optical band gap of 1. 3ev, which is close to the optimal band gap 1. 5ev

    Sns的光學直接隙為1 . 3ev ,接近於太陽能電池材料的最佳禁帶寬度1 . 5ev 。
  16. Bulk silicon, with indirect band gap of 1. 12 ev, does n ' t emit visible light at room temperature

    本體硅為間接半導體,且禁帶寬度比較窄( 1 . 12ev ) ,在室溫下很難發可見光。
  17. In order to implement photo - catalysis in common condition, the band gap must be decrease. doping is a good measure

    為了實現自然條件下的光催化,需要降低tio _ 2禁帶寬度,摻雜則是一種較好的措施。
  18. In this paper the band - gaps of the different concentration ge - doped czsi were measured, and the band - gap numbers were gotten

    論文中對硅鍺單晶的光學禁帶寬度進行了測試,得出了摻鍺不同濃禁帶寬度值。
  19. The mechanism of the luminescence has been discussed. bulk silicon, with indirect band gap of 1. 12ev does n ' t emit light at room temperature

    本體硅為間接半導體,且禁帶寬度較窄,室溫下很難發光。
  20. When the - 3 - particle size was small, the aberration of crystal lattice appeared and the bandgap energy increased, which resulted in the blue shift of absorption in the spectrum

    本研究中小的二氧化鈦晶粒導致了tio _ 2的晶格畸變,進而增大了tio _ 2的禁帶寬度,表現在光吸收譜的藍移。
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