穩定性退火 的英文怎麼說

中文拼音 [wěndìngxìngtuìhuǒ]
穩定性退火 英文
stabilizing annealing
  • 穩 : 形容詞1 （穩定; 穩當） steady; stable; firm 2 （穩重） steady; staid; sedate 3 （穩妥） sure; rel...
  • 定 : Ⅰ形容詞1 （平靜; 穩定） calm; stable 2 （已經確定的; 不改變的） fixed; settled; established Ⅱ動詞...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 穩定性 : antiwhip
  • 穩定 : 1 （使穩定） stabilize; steady 2 （穩固安定） stable; steady 3 （物質的性能不易改變的作用） stabi...
  • 退火 : [冶金學] anneal; annealing; back-out
  1. When the atomic ratio of nb is one, the structure is homogeneous and almost composed of the single sm2fe17 phase. it ' s nearly the same structure as that after annealing. so it can reduce the production cost and increase the stability of magnetic properties

    當nb的原子比為1時的鑄態組織基本為均勻的接近單相的sm _ 2fe _ （ 17 ）組織，已接近於退火后的組織，從而可以避免冗長的均勻化退火化過程而直接用於製造永磁體，極大的降低了生產成本，並能有效的提高磁性能的穩定性。
  2. Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1

    結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。
  3. However, te - rich phases and point defects with high concentration were found locally. not only the vapor - solid equilibrium but also the vapor - liquid - solid equilibrium should be considered for the annealing of the crystals with te - rich phases. by analyzing the phase diagrams of cd - te and p - t plot of cd1 - xznxte ( x = 0. 04 ), it was concluded that for the purpose of rem

    本文通過仔細分析cd . te二元相圖和cd卜龍znxte （ x = 0 . 04 ）的p一t相圖，認為為了去除富te相，獲得穩定的電學性能，退火時晶片溫度應小於115ok ，氣氛環境的總壓力應小於pcs （對cdte ， pc洶
  4. Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material

    研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。
  5. The results demonstrate that the upper limit of permafrost in this area had declined from 1970s to the middle phase of 1990, and permafrost has appeared degenerate tendecy, but since middle 1990s, permafrost have a stable state ; ground temperature of roadbed near the earth surface is higher than that of the natural ground, thawing time of roadbed near the earth surface is longer than that of the natural ground, the heat income within the permafrost is greater than the heat release from the permafrost during anannual period, the heat accumulation within the permafrost is temporarily appeared as temperature rising, but with the heat accumulation within permafrost growing up year by year, permafrost temperature will become higher gradually, and strong thawing of permafrost could be happened in the region

    結果表明：風火山地區從20世紀70年代到90年代中期凍土上限下降，凍土出現退化現象，從90年代至今凍土趨于穩定；路基近地表地溫明顯高於對應天然地表下的地溫，路基近地表經歷的融化期長于對應天然地表，進入多年凍土區的熱收支也呈現出吸熱明顯大於放熱的周期性變化，進入多年凍土的熱積累暫時以增高地溫耗熱為主，但隨著凍土吸熱量的逐年積累、凍土溫度的不斷升高，本區凍土可能發生強烈融化。
  6. 5. after high temperature annealing the hardness of the composites did not reduced obviously until 973k, this temperature greatly exceeds that of pure copper ( after cold machining, the temperature is 423k )

    本文制備的材料經高溫退火后的硬度明顯降低溫度點為973k ，大大超過了純銅（冷加工態）的423k ，而且熱穩定性能較好。
  7. S. the composite prepared has excellent heat stability and high - temperature property. during the course of high temperature annealing, the hardness of the composite does not reduce obviously until 973k, while the temperature of pure copper ( after cold machining ) is 423k in the same conditions

    制備的cr _ 2o _ 3 cu復合材料具有良好的熱穩定性及高溫性能，在高溫退火處理過程中，硬度顯著降低點的溫度為973k ，大大高於純銅的硬度降低點。
  8. First, based on comprehension analysis of the present study status on optimizing method to displacement back analysis in underground engineering home and abroad, intelligent optimizing method, which fits the features of underground engineering, has been developed by introducing annealing algorithm and genetic algorithm and improving them. second, according to practical features of nonlinear displacement for underground engineering, the mechanical model on back analysis to initial ground stress and mechanical parameters of surrounding rock mass in underground engineering is established, which is based on the measuring results of displacement of convergence in underground holes. while, by introducing finite element method and combining improved annealing algorithm and improved genetic - annealing algorithm, the theory and method of elastic - plastic displacement back analysis to surrounding rock in underground engineering has been founded

    首先，本文在綜合分析國內外地下工程優化位移反分析方法研究現狀的基礎上，引進模擬退火與遺傳演算法，並對其進行改進，建立了適合於地下工程問題特點的智能優化演算法;其次，根據地下工程非線性特點，基於地下工程洞周收斂位移量測結果，建立了用於地下工程初始地應力與圍巖力學參數反演分析的力學模型，並引進有限元分析手段，結合改進模擬退火演算法與改進遺傳-模擬退火演算法，分別建立了基於這兩種智能優化演算法的地下工程圍巖彈塑性位移反分析理論與方法，並開發了相應的分析計算程序，為地下工程圍巖穩定性與開挖順序優化分析奠定了基礎;然後，在上述基礎上，根據地下工程開挖施工順序優化設計的特點，建立了基於圍巖塑性區面積的地下工程開挖施工順序優化分析模型，基於改進模擬退火演算法與改進遺傳-模擬退火演算法建立了地下工程開挖施工順序優化分析方法，並開發了相應的分析計算程序;最後，將上述分析計算程序用於工程實例分析，探討了其應用方法，證明了該文研究成果的合理性和可靠性。
  9. Through analyzing thin film ’ s photoelectric properties affected by different technology conditions via lbl and chemical anneal methods, we expect to achieve reasonable technology conditions to combine a - si : h ’ s excellent photoelectric properties with microcrystal silicon ’ s high stabilities and to produce a - si : h thin film with a high photosensitivity and low light - induced degradation

    通過分析layer - by - layer方法、化學退火法不同的制備工藝條件對薄膜光電特性的影響，得到合理化的制備工藝條件，以期將非晶硅優良光電特性與微晶硅的高穩定性相結合，從而制備高光敏性和低光致衰退性的非晶硅薄膜。
  10. And experimental study on thermostability of mgb

    制備過程中退火效應和熱穩定性的實驗研究
  11. The annealing effects of mgb2 and experimental study on thermostability of mgb2

    Mgb2制備過程中退火效應和熱穩定性的實驗研究
  12. The effects of annealing on superconducting transition and the thermostability of mgb

    超導體制備過程中的退火效應和熱穩定性的實驗研究。
  13. Diffusion / oxidation furnace is a kind of very important equipment which is used in semiconductor process production line. it is applied in the manufacture process of the discrete semiconductor devices and integrated circuit which have diffusion, oxidation, annealing and alloying processing. it is also used in special temperature treatment of other material and is an auto - equipment which has the command of long time working, high precision and high stability

    擴散/氧化爐是半導體工藝生產線上非常重要的一種工藝設備，用於分立半導體器件、集成電路製造過程中各種擴散、氧化、退火及合金工藝，也適用於對其他材料的特殊溫度處理，是一種要求能長時間連續工作、高精度、高穩定性的自動控制設備。
  14. Ni ohmic contacts fabricated by traditional evaporation and thermal annealing on temperature of about 1000 have lower contacts resistances. the testing result on 400 does n ' t show it can keep thermal stability

    按常規方法鍍鎳（ ni ）並經1000左右高溫退火得到的歐姆接觸具有更低的室溫比接觸電阻，但400高溫歐姆特性測試表明其熱穩定性不夠好。
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