空穴注入 的英文怎麼說

中文拼音 [kōngxuézhùrù]
空穴注入 英文
hole injection
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  2. High surface hole concentration p - type gan using mg implantation

    應用mg離子注入獲得高表面空穴載流子濃度p -型gan
  3. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  4. Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole

    熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。
  5. Using the typical moled structure glass / dbr / ito / htl / eml （ etl ） / al ， the el spectrum narrowing, intensity enhancement in the normal direction as well as emission intensity redistribution in space are observed. by the introduction of single layer silver film instead of the dbr / ito multilayer, a ( / 2 - length cavity is obtained. using this kind of microcavity, three - color single mode pl from a single material alq and three - color single mode el from double layers pvk / alq are achieved for the first time

    通過以金屬銀替代多層結構的dbr / ito ，既作為反射鏡，又作為el器件中的空穴注入電極，設計出腔長只有（ / 2的超短微腔，採用同一種寬譜帶材料alq作為光發射層，首次報道了三基色單模光致發光和pvk / alq雙層結構的三基色單模電致發光。
  6. 3 the carrier transportation and transition in led active layer had been analyzed. the larger number of quantum wells are in active layer, the lower carrier density will be, and the better confinement of carrier is

    ） y方向上的有效質量減小，而輕空穴則具有負的有效質量，這對器件電注入和光輻射復合是有利的。
  7. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  8. Secondly, we demonstrated the possibility of improving electron and hole injection and balance to poly ( phenelene vinylene ) derivatives by replacing oxadiazole segments

    利用空穴傳輸特性ppv鏈段上添加電子傳輸型基團的方法改善了兩種載流子注入和傳輸的平衡。
  9. Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition. the p - type gan was achieved with high hole concentration 8. 2810

    應用mg離子注入mocvd法生長摻雜mg的gan中，在經過800 ， 1h的退火后，獲得高空穴載流子濃度8 . 2810
  10. Conformed by van der pauw hall measurement after annealing at 800 for 1h. this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration

    的p -型gan 。首次報道了實驗上通過mg離子注入到mg生長摻雜的gan中並獲得高的表面空穴載流子濃度。
  11. Lif acting as the electron inject layer can increase the luminous efficiency and decrease the operating voltage ; cupc acting as the hole inject layer can improve the device ' s stability, but at the same time, it will cause the reduction of brightness and efficiency

    Lif作為電子注入層，能夠明顯提高器件的發光效率，降低器件的工作電壓； cupc作為空穴注入層能夠使器件穩定性提高，但也導致了亮度和效率的下降。
  12. This paper has five chapters : the first chapter : describing the evolution of the organic / polymeric electroluminescent device, analyzing its advantages and disadvantages when acting as flat display, introducing the oled structure, luminous mechanics and the methods of increasing the luminous efficiency, etc. the second chapter : discussing the effects on the performance of oled if the lif acts as an electron inject layer and / or cupc acts as a hole inject layer

    本文共分五章：第一章：詳細敘述了有機聚合物電致發光器件的研究進展，分析了其作為平板顯示的優缺點，介紹了oled結構、發光原理和提高其效率的途徑等。第二章：討論了lif作為電子注入層， cupc作為空穴注入層對器件性能的影響。
  13. When a mutually doped transitional layer is introduced, no matter it is added to the interspace of electron transport layer and hole transport layer or to the interspace of the hole transport layer and hole inject layer, it can reduce the defects of the interface and result in the increase of brightness and the decrease of the operating voltage obviously

    我們在器件中引入了互摻過渡層結構，發現不管在電子傳輸層和空穴傳輸層之間，還是在空穴傳輸層和空穴注入層之間採用這樣的摻雜結構，都能夠有效減少有機層間的界面缺陷態，明顯提高了器件的亮度，降低了器件的工作電壓。
  14. Appling p - n graded heterojunction instead of abrupt one is studied deeply in theory, and the conclusion is that it will enhance the current injection ratio, decrease the built - in voltage, improve the quality of the crystal and it will not affect the confinement to the hole

    在理論上提出在hb - led器件的dh結構中使用p - n結的漸變異質結替代現行的p - n突變異質結。分析採用異質結漸變方式將增加hb - led的電流注入比，減小內建電勢，改善晶體質量，並且不影響p - n結對空穴的限制。
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