空間電荷中和 的英文怎麼說
中文拼音 [kōngjiāndiànhézhōnghé]
空間電荷中和
英文
space charge neutralization- 空 : 空Ⅰ形容詞(不包含什麼; 裏面沒有東西或沒有內容; 不切實際的) empty; hollow; void Ⅱ名詞1 (天空) s...
- 間 : 間Ⅰ名詞1 (中間) between; among 2 (一定的空間或時間里) with a definite time or space 3 (一間...
- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 荷 : 荷名詞(蓮) lotus
- 和 : 和動詞(在粉狀物中加液體攪拌或揉弄使有黏性) mix (powder) with water, etc. : 和點兒灰泥 prepare some plaster
- 空間 : space; enclosure; room; blank; interspace
-
The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied
介紹了數值計算方法,包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。Effects of the space charge forces and the beam halo in an avf cyclotron with intense beam currents
型?旋加速器中的空間電荷效應和束暈Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity
利用sndm ,從純電學的角度觀察了plct薄膜中的電疇動態反轉過程,由電疇橫向擴張的移動速度的降低,發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度,得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象,結果表明空間電荷是發生極化弛豫的主要原因。For the mesoscopic metal ring system in external magnetic field, supposing the system has a symmetry under translation in charge space, the quantum current and the quantum energy spectrum in mesoscopic metal ring are given by solving thire eigenvalue equations ; and the quantum fluctuations of the current and the energy have been calculated by the character of the minimum shift operator
摘要針對處于外磁場中的介觀金屬環系統,假設在電荷空間中具有變換的對稱性,通過求解本徵值方程給出系統的量子電流、能譜關系;利用最小平移算符的性質等,計算介觀金屬環中電流和能量的量子漲落。For one - dimensional mesoscopic metal rings system in external magnetic field, supposing the system has a symmetry under translation in charge space, the quantum current relation in mesoscopic metal rings is given by solving the eigenvalue equation of the current, the property of quantum current have been investigated and analysed
摘要針對處于外磁場中的一維介觀環系統,假設在電荷空間中具有變換的對稱性,通過求解電流算符的本徵值方程,給出系統中的量子電流關系,分析和研究一維介觀金屬環中量子電流的性質。Numerical simulation results indicate that, for low temperature dust particles, dust particles mainly exist in the area near the column center and their charge - number can be considered as a constant, while in the area where there are no dust particles, ion and electrons are in ambipolar diffusion ; for high temperature dust particles, both the distribution regions of dust particle and high ion density are expanded and dust charge - number is increasing with the distance from the center
計算結果表明:當塵埃粒子的溫度較低時,塵埃粒子主要集中在圓柱形放電器的中心很小的區域,塵埃粒子攜帶的電荷幾乎是一個常數,受塵埃粒子空間電荷的影響,離子在該區域的密度最高。在遠離中心區域,離子和電子呈現雙及擴散特點;當塵埃粒子的溫度較高時,塵埃粒子分佈的區域和高離子密度區域擴大,塵埃粒子離放電器中心越遠,攜帶的負電荷越多。The ramp - type sustain waveform is featured with the longer rise - time than the conventional waveform and it is a compromise to let gas discharge with lower cell voltage but still helps accumulate enough wall charges to sustain discharge sequence in cells
斜緩維持波形的特徵為其電壓上升時間較傳統波形增加了三倍左右,其有助於降低氣體放電時的空間電壓差和累積足量的壁電荷以維持腔體中氣體放電作用得以連續產生的效果。( 3 ) we explore photorefractive screening solitons and characters of beam transmission in sbn : 61 : cr crystals. the dependence of beam diameter at the crystal output face on applied field is presented. and influences of the limiting space charge field of the crystals on the experimental results are analyzed
( 3 )初步研究了兩塊不同摻cr濃度的sbn 61 cr晶體中的屏蔽型空間孤子效應,以及不同外加直流電場作用下光束在晶體中的傳輸,給出了晶體出射表面處光斑直徑隨外電場的變化曲線,並分析了晶體中空間電荷場的飽和效應對實驗結果的影響。2. to design an axial magnetic field. the cathode lies in 0. 4 - 0. 7 of peak value of the magnetic field and excursion channel in a uniform magnetic field to suppress space charge effects ; to design transition section between the gun and excursion channel in converse computation. 3
選擇電子槍陰極處于軸向聚焦磁場峰值的0 . 4 - 0 . 7倍處;漂移通道(互作用區)位於均勻軸向聚焦磁場中,以抑制電子束的空間電荷效應;使用反演算法設計電子槍和漂移通道之間的過渡區。In this paper, space charge distribution in dc composite insulator frp rod materials after negative dc high voltage application was measured by pea method and the results were analyzed and discussed
摘要使用pea法空間電荷測量系統測量了負直流高壓電場作用后復合絕緣子芯棒材料中空間電荷分佈,並進行了相關的分析和討論。Through the competition of ionization equilibrium of zno22 - and precipitation reaction, the nucleation and growth process of znse have been adjusted, and monodispersed znse semiconductor hollow microspheres are obtained. these microspheres were found to form through aggregation of small znse nanocrystals sizes of which could be finely tuned by temperature control. a novel gas - liquid interface aggregation mechanism was proposed and this idea might be generalized in other systems
以zno22 -陰離子提供鋅源,利用它在強堿性溶液中緩慢釋放出zn2 + ,並與se2 -之間的電荷排斥作用,成功地調節了反應動力學,獲得了尺寸和分散性都非常均勻的微米級znse空心球,並實現了空心球內部粒子尺寸的調控,提出了新穎的氣液界面團聚機理。After the discussion of the numerical simulation method based on the fdtd method and the pml technique, the motions of the charges and the electrical field lines were first employed to describe the radiation procedures of the pulse electromagnetic waves. then the causes of how the charges are accelerated and how the motion status of the charges are maintained were further studied from the angle of interaction of charge and field. after these analyses, it was pointed out that the pulse radiation is due to the suddenly occurred time - varying electrical field ( displacement current ) in the open space. this view was further evidenced by two examples : one is the partly resistance loaded antenna, the other is the partly curved antenna. the radiation procedures of the pulse electromagnetic waves of many different situations were simulated throughout this paper with the contours and waveforms of electric field given. these figures are very helpful to the understanding of the radiation mechanism of the pulse electromagnetic waves
在討論了基於時域有限差分法和完全匹配層技術的數值模擬方法之後,首先從運動電荷和電力線的角度直觀地描述了脈沖電磁波的輻射過程,然後進一步從場與電荷相互作用的角度分析了天線上電荷是如何被加速以及如何維持其運動狀態的,指出了開放空間中突然出現的時變電場(位移電流)是脈沖電磁波輻射的根本原因.文中還對局部電阻加載的天線和局部彎曲的天線進行了研究,以進一步說明上述觀點.對多種情況下的脈沖輻射過程進行了數值模擬,並給出了電場的等高線和空間波形圖,這些圖形對理解脈沖電磁波的輻射機理非常有益On - line monitoring of hvcb is the precondition of predicting maintenance, is the key element of reliable run, and is the important supplement to the traditional off - line preventive maintenance in fact, the faults are made by hvcb, no matter in number or in times, is over 60 % of total faults so it has determinative importance for improving the reliability of power supply and this can greatly decrease the capital waste used by - dating overhaul in this paper, the inspecting way of hvcb mechanism characteristic is discussed the concept of sub - circuit protector is presented, the scheme that we offered has been combined with sub - circuit integrality monitoring theory, to ensure that it has the two functions as a whole according the shut - off times at rated short circuit given by hvcb manufacturer, the electricity longevity loss can be calculated in each operation, and the remained longevity can be forecast too an indirect way for calculating main touch ' s temperature by using breaker shell temperature, air circumference temperature and breaker ' s heat resistance is improved in this paper, and main touch resistance can be calculated if providing the load current msp430, a new single chip microcomputer made by ti company, is engaged to develop the hardware system of the on - line monitoring device, and special problem brought by the lower supply voltage range of this chip is considered fully
高壓斷路器所造成的事故無論是在次數,還是在事故所造成的停電時間上都占據總量60以上。因此,及時了解斷路器的工作狀態對提高供電可靠性有決定性意義;並可以大大減少盲目定期檢修帶來的資金浪費。本文論述了斷路器機械特性參數監測方法;提出了二次迴路保護器的概念,並將跳、合閘線圈完整性監視和二次迴路保護結合起來,給出具有完整性監視功能的二次迴路保護器實現方案;根據斷路器生產廠家提供的斷路器額定短路電流分斷次數,計算每次分閘對應的觸頭電壽命損耗,預測觸頭電壽命;提出根據斷路器殼體溫度和斷路器周圍空氣溫度結合斷路器熱阻來計算斷路器主觸頭穩態溫升的方法,並根據此時的負荷電流間接計算主觸頭迴路的電阻;在硬體電路設計上,採用美國ti公司最新推出的一種功能強大的單片機msp430 ,並充分考慮該晶元的適用電壓范圍給設計帶來的特殊問題;在通信模塊的設計中,解決了不同工作電壓晶元之間的介面問題,並給出了直接聯接的接線方案。In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease
對sicjfet的電參數如電子濃度,遷移率,電阻率和空間電荷區密度在中子輻照下的變化進行了分析,提出了中子輻照下6h - sicjfet的器件模型,利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。By employing a 2. 5d particle - in - cell code, which involves the space - charge - effect and the nonlinear beam - wave interaction, the microwave development process in rtto is simulated
利用考慮了空間電荷效應和束波非線性相互作用的2 . 5維pic粒子模擬程序,我們模擬了rtto中微波的產生。One of effective ways of overcoming space charge effect is to fill plasma in high power wave apparatus, by the neutralization between plasma and space charge, the transfer current is going to be largely enhanced, thereby out - power is going to be largely increased. meantime, due to there are many fluctuating modes in plasma, so it is able to bring a new beam - wave interaction mechanism, by it people can invent some new type high power microwave apparatus
高功率微波裝置中的電流密度很大,空間電荷效應強烈,影響了功率的提高,克服空間電荷效應的有效方法是在高功率微波器件中填充等離子體,由於等離子體對空間電荷的中和作用,傳輸電流會大大提高,從而大幅度提高輸出功率,同時由於等離子體中存在多種波動模式,有可能帶來新的注波互作用機制,發展新型的高功率微波器件。The mode competition is much improved. it may operated with a large electron beam radius, that means decreasing the space charge effects compared with a smaller radius beam with the same current, hence the rbwo may operated with a low axial guide magnetic field. besides, the rbwo with a sinusoidal corrugated coaxial structure is very easy to manufacture
波紋內導體rbwo具有一些突出優點:同軸結構中內導體的存在使系統的截止頻率顯著升高,使得系統尺寸可比普通波紋波導慢波系統大;具有很大的抑制模式競爭的能力和很高的功率容量;可以採用大半徑電子注,在工作電流不變的情況下空間電荷效應大幅度降低,因而可以工作在低磁場狀態;此種慢波結構內導體上的波紋易於加工。Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶體結構,分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式;用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性;本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。The green ' s function of infinite and half - infinite space, the solutions of a cone under concentrated loads at its apex, and rotating circular and annular plate of magnetoelectroelastic medium are obtained by use of these solutions and given boundary conditions
在此基礎上,由平衡問題的一般解和邊界條件,得到了磁電彈性介質無限空間和半空間的green函數解、圓錐體頂端受集中荷載作用的解析解、旋轉圓盤和圓環的三維解析解。分享友人