穿晶效應 的英文怎麼說
中文拼音 [chuānjīngxiàoyīng]
穿晶效應
英文
grain effect- 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
- 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
- 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
- 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
- 效應 : [物理學] effect; action; influence
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The beam - test of china pin diodes at the cern sps accelerator produced satisfactory results. in addition, we studied the pin punch - through effect, and obtained the pin punch - through data with 18cm long pb wo4 crystal at the electron beam energies higher than 20gev for the first time, and these data gave valuable information to alice / phos
在cern的sps加速器上的束流測試，得到比較滿意的結果；並對穿透效應做了實驗研究，首次獲得100gev粒子和20gev以上電子束的18厘米長pbwo4晶體探測器pin硅光管穿透效應實驗數據，為alice phos提供了有價值的參考資料。The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.
論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
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