穿隧電流 的英文怎麼說

中文拼音 [chuānsuìdiànliú]
穿隧電流 英文
tunneling current
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  • 隧 : Ⅰ名詞1. （隧道; 地道） tunnel; underground pass2. [書面語] （道路） road3. （郊外的地方） suburbsⅡ動詞[書面語] （旋轉） turn
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Tunneling process is important in the low to moderate current density range.

    在中等及中等以下電流密度下，隧道穿透過程是重要的。
  2. But there may be no practical way to make these insulating layers much thinner, because current flow by quantum tunneling makes them progressively worse insulators

    但不能讓絕緣層更薄了，因為量子穿隧電流會降低絕緣效果。
  3. Conventional resonant tunnel diodes allow currents to flow at a specific voltage, one at which the electrons have an energy that is resonant with the tunneling barrier

    傳統共振穿隧二極體在特定電位下可讓電流通過，此時電子的能量共振于（即等於）穿隧位障。
  4. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  5. So a conclusion can be got that the annealing in n2 raises the la2o2, stability. 3. the exact solution and wkb approximation are compared, the exact solution agrees with the wkb approximation in calculating the mono - layer sio2 tunneling current, but the wkb approximation is inappropriate for the dual layer oxide - lanthanum structure, while the exact algorithm can give a exact result

    比較了wkb和精確解法計算柵介質隧穿電流的方法，精確解法在解決單sio _ 2層和wkb準經典近似有相同的結果，但是wkb不適合計算la _ 2o _ 3 / sio _ 2雙層柵介層的隧穿電流，而精確解法能精確地計算雙層柵介質隧穿電流。
  6. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  7. Hot electron tunneling mechanism of current collapse in gan hfet

    溝道熱電子隧穿電流崩塌模型
  8. The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique

    利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。
  9. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  10. The tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and is allowed when their orientations are the same

    若兩側的鐵磁層磁性方向相反，穿隧電流就被擋住，反之則可通過。
  11. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  12. Current flows through the device by the process of quantum tunneling : a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator

    電子在元件中利用量子穿隧效應流動，少量的電子可穿過絕緣層的障礙到達另一邊。
  13. The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface. the influence of barrier height of transport layer on current density, recombination current and recombination efficiency of the devices is great

    結果表明：雙層器件的發光是載流子隧穿內界面后在兩有機層中的復合發光，輸運層的勢壘高度對載流子電流密度、復合電流密度以及器件的復合效率影響很大。
  14. An empirical direct tunneling current expression for ultra - thin oxide nmosfets

    器件的直接隧穿電流經驗公式
  15. Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data

    由超晶格中子能級之間的順序多阱共振隧穿引起的電場疇及電流自維持振蕩現象是其中的一個非常有意義的分支，該現象可用來製作電壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定偏壓下電流自維持振蕩產生的條件進行了深入的探討，並結合宏觀模型和微觀模型對超晶格在時變電壓作用下的電壓-電流特性以及固定偏壓作用下的電流特性進行了模擬計算。
  16. The study shows that coulomb scattering becomes more important at low transverse - electric field and both the density and the distribution of charged - centers play an important role in el ectron transport in sic inversion layers. the radiation response and electric characteristics of 6h - sic mos structure is studied with experiment for the first time

    在實驗上首次對6h sicmos結構的電特性及其輻照引起的電參數退化進行了研究，結果說明：在氧化層電場較高時是fowler nordheim隧穿電流決定著sicmos結構的漏電流。
  17. In order to resolve the questions, a new high k material is developed instead of the traditional sio2 gate dielectric material to reduce the tunneling current

    目前，正在利用介電常數較大的材料來代替傳統的sio _ 2作為柵介材料，來減少隧穿電流。
  18. The calculational result by exact solution shows that the substrate inject current is larger than gate inject current in the same condition. the influence of the thickness of sio2 and la2o3 on the tunneling current is given to compare much different thickness of sio2 and la2o3 tunneling current on the same equivalent oxide thickness ( eot ) condition

    在等效氧化層厚度相同的情況下，比較了幾種不同的sio _ 2層厚度和la _ 2o _ 3層厚度結構的隧穿電流的大小，給出了sio _ 2層厚度和la _ 2o _ 3層厚度對隧穿電流的影響。
  19. A competition mechanism throughout the tunnel etching of aluminum foils is established in this study, namely, the competition between the attack to passive surface by aggressive anions and the passivation caused by passivators ; dissolution competition between side wall of tunnels and overall surface of foils. to demonstrate the competition mechanisms, the etching conditions influencing the morphology of tunnels, surface modification of foils, redemption and regeneration of passive state were investigated

    本文在綜述了目前國內外鋁陽極箔發展和直流電侵蝕理論的基礎上，研究了鋁箔侵蝕過程中影響隧道孔形貌和比容的各種因素，揭示了貫穿于整個侵蝕過程的競爭規律，即蝕孔成核競爭? ?鋁箔表面的活化與鈍化競爭；溶解競爭? ?隧道孔孔壁的溶解與侵蝕箔表面的溶解競爭。
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