第二曲率半徑 的英文怎麼說

中文拼音 [èrbànjìng]
第二曲率半徑 英文
radius of second curvature
  • : Ⅰ助詞(用在整數的數詞前 表示次序) auxiliary word for ordinal numbers Ⅱ名詞1 [書面語] (科第) gr...
  • : Ⅰ數詞(一加一后所得) two Ⅱ形容詞(兩樣) different
  • : 曲名詞1 (一種韻文形式) qu a type of verse for singing which emerged in the southern song and ji...
  • : 率名詞(比值) rate; ratio; proportion
  • : Ⅰ數詞1 (二分之一) half 2 (在 中間的) in the middle; halfway 3 (比喻很少) very little; the l...
  • : Ⅰ名詞1 (狹窄的道路; 小路) footpath; path; track 2 (達到目的的方法) way; means 3 (直徑的簡稱...
  • 第二 : 1. (序數) second 2. (姓氏) a surname
  1. The position and size of the monochromator, focusing curvature radii and tilting angles of the germanium focusing monochromator under different different take - off angle, size and divergency of the second collimator and intensity loss due to the use of it were determined. the neutron flux at different wavelength, under different reflection and take - off angle of the monochromator and divergency of the first collimator, were given. the simulation on the aperture used for limiting beam size in front of the sample showed that, smaller the size of the aperture and further the distance from the aperture to the sample, greater the loss of the intensity and more serious the spread of the beam along vertical direction at the sample position which makes the practical sampling volume greater than expected

    用蒙特卡羅模擬方法對中子應力衍射譜儀的設計方案進行了優化研究,提出了一系列可供參考的數據:確定了單色器的位置、尺寸、垂直聚焦單色器在不同起飛角下的聚焦和傾角;討論了準直器的尺寸和發散,以及使用準直器造成的強度損失;給出了在不同單色器反射面、起飛角、中子波長和一準直器發散度的情況下樣品處的中子注量,以及多種組合情況下譜儀的解析度線;對限束方孔的尺寸、距離樣品遠近對強度損失和測量中的影響做了深入研究。
  2. All this has laid a strong foundation for selecting a subject of maskless afm nanolithography, i. e., field - induced oxidation of si semiconductor. in chapter two, a high - intensity current between a probe tip and a sample is discussed first. electrical intensity between them is simulated using matlab software after an electrical model is introduced, thus theoretically analyzing the effect of tip radii, tip - sample separation, radii at the sample, and biases on the morphology of field - induced oxidation

    章首先討論了掃描探針與樣品之間的高密度電流,得出了電流密度與偏置電壓和探針?樣品間距密切相關,其關系不能以簡單的線性或指數函數來表述的結論;然後引進了掃描探針場致加工的電場模型,利用matlab模擬探針與樣品之間的電場強度,分析了掃描探針加工條件包括探針針尖、探針-樣品間距、樣品平面以及偏置電壓等對場致氧化物幾何形態的影響。
  3. Chapter 2 : using a so - called variance matrix, we studied the propagation and the focusing characteristics of the paraxial light beams. the quantities characterizing the gross features for a paraxial optical beam, such as the beam width, the divergence, the curvature radius of the wavefront, the complex beam parameter q. and the beam quality factor, are related by using variance matrix

    章:闡述了常數折射介質中光束的傳輸和聚焦,建立了表徵傍軸光束總的特徵的量,如:束寬、衍射發散角、波前、復光束參數q與變換矩陣的關系,得到了光束質量因子和變換矩陣行列式的定量關系。
  4. Radius of second curvature

    第二曲率半徑
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