粗晶種 的英文怎麼說
中文拼音 [cūjīngzhǒng]
粗晶種
英文
coarse seed-
It is indicated after laser remelting, the density of the nano material infiltrated coating is improved and grain size is decreased greatly. in above researches, it is found that the nano material is distributed among general material grains to form inter - granular structure of the coating
研究發現，在各種塗層中納米顆粒明顯填充在粗顆粒間，構成晶間型組織結構；初步測試還表明，在al _ 2o _ 3 + 13 wtIf hetian jade explains the tremolite of the thick brilliant form in the course of forming, because does not explain completely, often enclose the tremolite of the thick brilliant form on the surface of the jade, but the line is excessive for this kind of stone cover and jade
如和闐玉在形成過程中交代了粗晶狀的透閃石，由於交代不徹底，在玉的表面常附有粗晶狀的透閃石，這種石皮與玉只是線過度。The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。A coarse - grained granite, sometimes rich in rare elements such as uranium, tungsten, and tantalum
花崗偉晶巖一種有時富含鈾、鎢和鉭等稀有元素的粗紋理花崗巖The traits of the two kinds of lattice determine which method we use to study it. the site - block method is often for transitionally invariant lattice and decimation for fractals
這兩種晶格的特點也就決定了在重整化群計算時選取什麼樣的粗粒化方法，平移對稱晶格一般採用自旋?元塊法，分形晶格採用格點消元法。The product at this step is still rough, and thus needs operations including carving, robbing and polishing after inspecting color, shape, etc, so as to present the transparency, light refraction or the shadow of the crystal
拆模后的作品較為粗糙，檢查其色彩、形狀等項目后需要進行切割、研磨、拋光等十余項作業，已達到設計之初所要表現的各種表現形式，例如表現水晶的透徹、光線的折射，或是朦朧的隱約美等等。The cmp experiment was carried out systematically on litao3 wafer. the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition, pressure, rotating speed of the polishing plate, the type and size of abrasive, and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details
通過對鉭酸鋰晶片的化學機械拋光過程的實驗研究，通過測量鉭酸鋰晶片在不同拋光條件下的表面粗糙度和材料去除率，詳細分析了拋光墊材料和狀態、拋光壓力、拋光盤轉速、磨料種類及粒度、拋光液組成等幾個因素對拋光表面質量和材料去除率的影響規律。3 the experiment showed that there is no copper deposition in the film using p ( an - mma ) as polymer matrix. but the copper deposition and gradient distributing appears in the film when using p ( an - ita ) and p ( an - mma - as ) as polymer matrix. the size and number of crystal increases as the concentration of ita in copolymer increase and the film is prone to be ruptured
3實驗顯示p （ an - mma ）作為基體制備的pmgcf五金屬沉積，銅的沉積量為零； p （ an - mma - as ） ， p （ an - ita ）兩種共聚物為基體時均出現金屬銅的沉積，二者金屬沉積相均呈現一定程度的梯度分佈形態，但p （ an - ita ）為基體時得到的晶體比較粗大，且隨其中ita的含量的增多得到粗糙晶體的數目增大，所制的pmgcf脆而硬，受外力沖擊時容易斷裂。The results indicate that arc melting is a good method to produce nb - si system intermetallics due to its simpler technics, lower cost and compact products. however, powder metallurgy is found to be not suitable to produce the nb - si system intermetallics due to its coarse and loose products resulting from the poor molding property of nb and si mixed powders. optical floating zone technology, which is used to fabricate nb - si intermetallic composites for the first time, is also found to be a good way to produce nb - si system intermetallics because of its compact products and good property despite of its relatively high cost
結果表明，電弧熔煉方法制備得到的nb - si系金屬間化合物比較緻密，且制備工藝簡單，經濟實用，是一種合適的nb - si系金屬間化合物制備方法；由於nb 、 si元素粉末的成型性很差，用粉末冶金方法（熱壓燒結和冷等靜壓）制備的nb - si系金屬間化合物表面粗糙、緻密度低，且成本較高，不宜用於制備nb - si系金屬間化合物；首次用光學懸浮單晶生長技術制備的nb - si系金屬間化合物復合材料緻密度很高，盡管成本稍高，但由於性能最佳，也是一種合適的nb - si系金屬間化合物制備方法。In addition, the growth mechanism of c - axis was screw dislocation growth or rough interface growth, but that of a, b - axis was two - dimension nucleation growth. because in low supersaturation, the speed of helix dislocation growth and rough interface growth was higher than that of two - dimension nucleation growth
另外，由於羥基磷灰石晶體結構的特點， c面主要以螺旋位錯生長和粗糙面生長兩種機制為主，而a 、 b面則主要以光滑面的二維成核生長為主。A switch ic for analog signal processing is designed and implemented, which can fulfill the functions of sampling, weighting, controlling and summing of high frequency analog signals. the circuit consists of three parts : four channel analog switches, a voltage reference and the control circuitry. each analog switch is comprised of two high - transconductance n - mosfets with high w / l ratio, which realize the fine tuning and coarse tuning of the input signal respectively
本文研究並設計了一種可對高頻信號進行取樣、加權、控制、疊加的模擬信號處理丌關集成電路，它包括模擬開關、電壓基準源和移位寄存器三個功能模塊，通過兩個高寬長比的高跨導nmos晶體管實現權值的粗調和微調。分享友人