粗晶面 的英文怎麼說

中文拼音 [cūjīngmiàn]
粗晶面 英文
facet fracture
  • 粗 : Ⅰ形容詞1 （長條東西直徑大的） wide （in diameter）; thick 2 （長條東西兩長邊的距離寬的） wide （i...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  1. When ph value < 0. 5, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity and bad surface quality of the deposits such as crassitude or darkling

    Ph 0 . 5時，沉積速度過快，晶核成長速度快，晶粒粒度較大，鍍層表面粗糙、發黑，表面質量差。
  2. This in turn causes a more profound modification of the etched surface, e. g., due to roughening or amorphization

    這將導致對于刻蝕表面的嚴重修正，譬如粗糙度和非晶化。
  3. When the thickness increases up to a critical value, about 30 nm, the spotty rheed pattern gradually changes to streaky pattern, and the rheed oscillation curve appears. the rheed pattern of the ultra thin lno film deposited in the relatively high oxygen pressure is streaky pattern. with pumping the oxygen pressure to the relatively low value, the streaky rheed pattern gradually changes to spotty one

    我們發現在較低的真空度下，即氧分壓處於2 10 - 4pa和3 10 - 3pa之間， lno晶格中的一個o2 -將會轉移兩個電子給兩個ni3 + ，並且移動到薄膜表面形成o2被泵抽走，從而導致鈣鈦礦結構的垮塌，其相應的rheed圖樣呈現出清晰而明亮的點，表明表面為較為粗糙的三維島狀結構。
  4. If hetian jade explains the tremolite of the thick brilliant form in the course of forming, because does not explain completely, often enclose the tremolite of the thick brilliant form on the surface of the jade, but the line is excessive for this kind of stone cover and jade

    如和闐玉在形成過程中交代了粗晶狀的透閃石，由於交代不徹底，在玉的表面常附有粗晶狀的透閃石，這種石皮與玉只是線過度。
  5. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  6. The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball

    結果表明：在相同的研磨條件下，具有長柱狀晶粒的氮化硅陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧化鋯和氧化鋁陶瓷球表面質量次之，碳化硅陶瓷球加工速率最高，圓度和表面粗糙度最難控制。
  7. The results are as follows : ( 1 ) bst thin film prepared by pulsed laser deposition is well crystallized. the average grain size is 100nm and the surface roughness is about 10nm. when the electric field intensity is 3v /, the tunability of the thin film is about 30 % and the loss tangent is about 20 % under room temperature

    研究結果如下： （ 1 ）採用脈沖激光沉積法制備的bst薄膜結晶良好，晶粒尺寸在100左右；表面粗糙度約為10 ；室溫下，當直流電場為3v /時介電系數變化率約為30 % ，介質損耗約為20 % 。
  8. The fractue experimental research of maraging 350 torsional rods

    大型連桿分模面混晶及粗晶魏氏組織
  9. Ito substrate with an smooth surface of 0. 2nm rms roughness measured by afm was obtained by the developed pre - cleaning processing procedure. mbe growth of znsxse1 - x thin films on ito coated glass substrates were carried out using zns and se sources. the xrd 9 / 29 spectra resulted from these films indicated that the as - grown polycrystalline znsxse1 - x thin films had a preferred orientation along the ( 111 ) planes

    採用分子束外延技術在ito導電玻璃上低溫沉積了zns _ xse _ （ 1 - x ）多晶薄膜，詳細研究了薄膜制備的工藝參數，在最佳沉積條件下，制備獲得了晶型為立方閃鋅礦，並具有（ 111 ）面高度定向生長結構的柱狀zns _ xse _ （ 1 - x ）多晶薄膜，其rms表面粗糙度最小可達1 . 2nm 。
  10. Firstly, the influence of reaction time between laser and material on the roughness is studied by changing the speed of laser beam. secondaly, the optimized parameters are found by adjusting laser power and defocus

    一方面，通過改變激光加工頭的運動速度，考察激光與晶元材料的相互作用時間對側壁表面粗糙度的影響;另一方面，調整激光的功率和離焦量，找出最優化參數。
  11. However, the die attach layer delaminated after 500 cycles and pcb cracked in the underfilled samples after long time cycling. c - sam is employed to investigate the delamination in the underfilled samples. highly concentrated stress - strain induced by the cte mismatch between the bga component and the pcb board, coarsened grain and two kinds of intermetallic compounds ( nisn / nisns ) which formed during reflow and thermal cycle and their impact on the reliability of solder joints are discussed in this paper

    充膠樣品粗化尤為嚴重； ? ni - sn金屬間化合物包括兩層：其中，靠近ni焊盤的那層比較平整，同時， eds結果分析表明其化學式近似為nisn ，而靠近焊料的那層呈板條狀，化學式近似為nisn _ 3 ，文獻表明其為亞穩相； ?充膠使得樣品最大應力范圍降了接近一個數量級並降低了dnp的作用，同時，器件失效模式變為晶元粘接層分層； ? c - sam結果表明本論文採用的充膠樣品，晶元粘接層分層起始於500周左右，而經過2700周循環的樣品，分層幾乎擴展到整個界面。
  12. Regular point images of lcd are projected to the measured surface. the images modulated by the surface are received by binocular vision sensor. a special image processing software is developed to deal with the lcd images

    系統利用液晶投射空間規則編碼點圖案到被測曲面，由雙目傳感器接收經曲面調制的測量圖像，經專用設計的圖像處理軟體，採用粗、細匹配技術精確獲得特徵匹配點，利用視覺技術得到三維數據點陣。
  13. In 6. 635, topics covered include : special relativity, electrodynamics of moving media, waves in dispersive media, microstrip integrated circuits, quantum optics, remote sensing, radiative transfer theory, scattering by rough surfaces, effective permittivities, random media, green ' s functions for planarly layered media, integral equations in electromagnetics, method of moments, time domain method of moments, em waves in periodic structures : photonic crystals and negative refraction

    本課程所覆蓋的論題包括：狹義相對論、運動媒質的電動力學、色散媒質中的波、微帶集成電路、量子光學、遙感、輻射傳輸理論、粗糙表面上的散射、有效介電系數、隨機媒質、平面層狀媒質的格林函數、電磁學中的積分方程、矩量法、時域矩量法、周期結構中的電磁波：光子晶體和負折射率。
  14. We figure the quality of the surface through three sides : surface roughness, the state of surface stress and surface component

    本文提出了從三個方面來表徵晶片的表面質量，即表面粗糙度，表面應力以及表面化學成分。
  15. Influence of the anisotropy on surface roughness in diamond tuning of optical crystal materials

    光學晶體材料的各向異性對金剛石車削表面粗糙的影響
  16. The surface of ce02 - ti02 films were very smooth and difficulty to crystallization. the ceo2 - tio2 complex films were nanocrystalline microstructure or microcrystalline even if to heat the substrates or to anneal the films. the ceo2 and tio2 nanocrystalline were not easy congregate and bigger because of heterogeneity interface disturb and have many defect

    組成ceo _ 2 - tio _ 2混合薄膜顆粒粒徑在納米尺度范圍3 ? 50nm ，與純ceo _ 2 、 tio _ 2薄膜相比，具有更小的表面粗糙度和更難結晶，這是由於異質材料晶界的相互干擾，使同質顆粒之間難于聚集而結晶長大，薄膜處于納米晶或雛晶態，即使加熱基片或薄膜進行熱處理也無明顯變化。
  17. Most of this area was shallow - lake, semi - deep lake and deep lake sedimentary environment, except that the area around the well ou44 was a set of steep - slope fan - delta and the dawan area was a set of small - scale fan - delta. there were fan - delta, turbidite - fan, shallow - lake, shore - marsh, semideep - lake and volcano - debris facies. in the area of the well ou39 and ou44, fan - deltas developed both in the middle and the top strata of the third member of the shahejie formation

    研究表明，粗面巖sio _ 2含量較高，流動性小，容易形成巨厚的巖鐘或巖錐，對成藏有利，同時其位於構造高部位，由於其大部在水面之上，冷卻時間長，易於從容結晶，同時還有大量裂縫作為儲集和滲濾的空間，使其成為良好的儲層。
  18. The cmp experiment was carried out systematically on litao3 wafer. the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition, pressure, rotating speed of the polishing plate, the type and size of abrasive, and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details

    通過對鉭酸鋰晶片的化學機械拋光過程的實驗研究，通過測量鉭酸鋰晶片在不同拋光條件下的表面粗糙度和材料去除率，詳細分析了拋光墊材料和狀態、拋光壓力、拋光盤轉速、磨料種類及粒度、拋光液組成等幾個因素對拋光表面質量和材料去除率的影響規律。
  19. In addition, the growth mechanism of c - axis was screw dislocation growth or rough interface growth, but that of a, b - axis was two - dimension nucleation growth. because in low supersaturation, the speed of helix dislocation growth and rough interface growth was higher than that of two - dimension nucleation growth

    另外，由於羥基磷灰石晶體結構的特點， c面主要以螺旋位錯生長和粗糙面生長兩種機制為主，而a 、 b面則主要以光滑面的二維成核生長為主。
  20. For the first time, an integrated waveguide turning mirror ( 1wtm ) in soi was put forward and realized. using anisotropic etching technology with koh solution, the mirror surface was very smooth with root square roughness only 5. 19nm, and the mirror was vertical to the wafer surface because of the crystalline relationship

    論文首次設計並製作了soi上集成波導式轉彎微鏡（ iwtm ） ，利用硅的koh各向異性腐蝕特性製作出的微鏡表面非常光亮，均方根粗糙僅為5 . 19nm ，並且由於鏡面是腐蝕出的晶面，其與晶片表面非常垂直。
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