粗晶體 的英文怎麼說

中文拼音 [cūjīngtǐ]
粗晶體 英文
coarse crystal
  • 粗 : Ⅰ形容詞1 （長條東西直徑大的） wide （in diameter）; thick 2 （長條東西兩長邊的距離寬的） wide （i...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Beryllium powders with the same particle size and various contents of beo were prepared by pre - sintering - acid washing processes initiatively and the influence of beo alone on o mys of beryllium was observed and some new results have been obtained - compared with the content of beo, the distribution of beo in beryllium has more critical influence on mys ; finely dispersed beo along the grain boundaries and in the matrix results in the dispersion strengthening of beryllium matrix and thereby the higher mys value ; on the contrary, the coarser beo particles clustering on the grain boundaries results in negative influence on o mys

    開創性地用預燒結? ?酸洗工藝制備了相同粒度、不同beo含量的鈹粉，從而開展了beo含量單獨對鈹材_ （ mys ）影響的研究，得出一些新的結果：與beo含量相比， beo在鈹中的分佈狀態對_ （ mys ）的影響更大。沿晶界、晶內彌散分佈的較細小beo對基體鈹有彌散強化作用，使_ （ mys ）即較高；如果beo較粗大地成簇狀聚集在晶界，反而對_ （ mys ）有不良的影響。
  2. Effect of microalloy element on the grain coarsening behavior of q345 steel

    345鋼奧氏體晶粒粗化行為的影響
  3. Effect of ti content on coarsening temperature and austenite grain size of ah

    36粗化溫度和奧氏體晶粒大小的影響
  4. Gross crystalline imperfections like twinning are apparent to the unaided eye.

    粗的晶體不完整性，如孿生體可用肉眼看出。
  5. In this paper, porous nanocrystalline titanium dioxide films were used to modify the surface of quartz crystal microbalance ( qcm ), the response of qcm with high roughness layer hi liquid phase was discussed, and the difference between the theoretic value and frequency response measured was illustrated in detail

    本文採用tio _ 2納米粒多孔膜修飾壓電晶體傳感器，對高粗糙度壓電傳感器的響應進行了探討，闡明了在液相中壓電響應的實際值與理論值產生偏差的主要原因。
  6. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  7. Effect of percent reduction and alloying elements on the austenite grain coarsening temperature of 18crmnbhz steel

    鋼奧氏體晶粒粗化溫度的影響
  8. Influence of ti content on austenite grain size and grain coarsening temperature in medium - carbon boron steel

    鈦含量對中碳硼鋼奧氏體晶粒度及晶粒粗化溫度的影響
  9. The effect of reheating austenitizing temperature on grain coarsening, the dissolution of vanadium compound and hardness of 50mn2v steel

    鋼再加熱奧氏體化溫度對晶粒粗化釩化物溶解及硬度的影響
  10. The process parameters of preparing nanosized titanium dioxide powders were systematically studied by electrochemical synthesis experiments at room temperature. the rutile phase and anatase phase powders were obtained in the sizes of 9. 7nm and 9. 2nm respectively, and the complete crystal powders were formed after calcined at 400 for two hours. in the process of experiments it was observed that the low current density resulted in rutile phase powders, while the addition of little amount of ions of sulfate promoted the formation of anatase phase powders

    在本實驗條件下，小的電流密度有利於金紅石相的生成，而少量硫酸根離子的引入對生成銳鈦礦相粉體有利，調整電流密度大小和引入硫酸根離子的量，可以得金紅石型和銳鈦礦型的混合混體；研究無定型粉體，銳鈦礦相粉體以及金紅石型粉體隨溫度的粒徑變化情況時發現，粉體在400以前晶粒長大相對緩慢， 400以後晶粒粗化現象嚴重。
  11. In 6. 635, topics covered include : special relativity, electrodynamics of moving media, waves in dispersive media, microstrip integrated circuits, quantum optics, remote sensing, radiative transfer theory, scattering by rough surfaces, effective permittivities, random media, green ' s functions for planarly layered media, integral equations in electromagnetics, method of moments, time domain method of moments, em waves in periodic structures : photonic crystals and negative refraction

    本課程所覆蓋的論題包括：狹義相對論、運動媒質的電動力學、色散媒質中的波、微帶集成電路、量子光學、遙感、輻射傳輸理論、粗糙表面上的散射、有效介電系數、隨機媒質、平面層狀媒質的格林函數、電磁學中的積分方程、矩量法、時域矩量法、周期結構中的電磁波：光子晶體和負折射率。
  12. Influence of the anisotropy on surface roughness in diamond tuning of optical crystal materials

    光學晶體材料的各向異性對金剛石車削表面粗糙的影響
  13. The affiliation controls the depth by thesuction size and intricate carvings tube thick degree of fineness, comparatively does not have the irritating quality, after theoperation is not easy to have puzzle the wound attendance, also is noteasy to have the pigment to precipitate or the skin blushes thepuzzle, also when operation cannot have the crystal pellet to deflect, the residual question, the entire process is very clean, safe

    藉由吸力大小與微雕管粗細度來控制深度， ，較不具刺激性，操作后不易有傷口照顧之困擾，也不易有色素沉澱或皮膚發紅之困擾，且操作時不會有晶體顆粒飛散殘留的問題，整個過程很乾凈，安全。
  14. At the present time, the first choice driver of icf is the laser. the basic requirements to the kdp crystal optics of icf solid laser driver are : high accuracy face shape quality ( transmission wave front / 6 pv ), high laser damage threshold value ( 15j / cm2 ), good surface roughness ( 5nm )

    慣性約束聚變固體激光驅動器對kdp晶體光學零件的基本要求是:高精度的面形質量（透射波前/ 6pv ） 、高激光損傷閾值（ 15j / cm2 ） 、良好的表面粗糙度rms （ 5nm ） 。
  15. 3 the experiment showed that there is no copper deposition in the film using p ( an - mma ) as polymer matrix. but the copper deposition and gradient distributing appears in the film when using p ( an - ita ) and p ( an - mma - as ) as polymer matrix. the size and number of crystal increases as the concentration of ita in copolymer increase and the film is prone to be ruptured

    3實驗顯示p （ an - mma ）作為基體制備的pmgcf五金屬沉積，銅的沉積量為零； p （ an - mma - as ） ， p （ an - ita ）兩種共聚物為基體時均出現金屬銅的沉積，二者金屬沉積相均呈現一定程度的梯度分佈形態，但p （ an - ita ）為基體時得到的晶體比較粗大，且隨其中ita的含量的增多得到粗糙晶體的數目增大，所制的pmgcf脆而硬，受外力沖擊時容易斷裂。
  16. The attained rate respectivly was 0. 07 %, 0. 02 %, 0

    此粗提物在一定濃度時低溫下易於結晶，晶體為多邊形。
  17. In addition, the growth mechanism of c - axis was screw dislocation growth or rough interface growth, but that of a, b - axis was two - dimension nucleation growth. because in low supersaturation, the speed of helix dislocation growth and rough interface growth was higher than that of two - dimension nucleation growth

    另外，由於羥基磷灰石晶體結構的特點， c面主要以螺旋位錯生長和粗糙面生長兩種機制為主，而a 、 b面則主要以光滑面的二維成核生長為主。
  18. A switch ic for analog signal processing is designed and implemented, which can fulfill the functions of sampling, weighting, controlling and summing of high frequency analog signals. the circuit consists of three parts : four channel analog switches, a voltage reference and the control circuitry. each analog switch is comprised of two high - transconductance n - mosfets with high w / l ratio, which realize the fine tuning and coarse tuning of the input signal respectively

    本文研究並設計了一種可對高頻信號進行取樣、加權、控制、疊加的模擬信號處理丌關集成電路，它包括模擬開關、電壓基準源和移位寄存器三個功能模塊，通過兩個高寬長比的高跨導nmos晶體管實現權值的粗調和微調。
  19. ( 2 ) with the condition of table 4. 2, the average reflectance decreases and the low reflectance vale moves towards shortwave, the influence on the extinction coefficient ( k ) of the films is very little, refractive index has trend of decrease and the thickness of the films decrease when increasing the total gas pressure, and the refractive index fix on a constant value when the total pressure exceeds a certain value. the phase of tio2 change from rutile to anatase and the size of surface grain change from big to small

    （ 2 ）隨著總氣壓的增加薄膜的反射低谷向短波方向移動;總氣壓對消光系數k影響不大;隨著總氣壓的增加薄膜的折射率出現了下降的趨勢，但當總氣壓達到一定的量值時折射率的變化趨于穩定;薄膜的厚度隨總氣壓的增加而減少;隨著總氣壓的增加tio2的晶體結構由金紅石相向銳鈦礦相轉變，薄膜的表面的顆粒度大小由粗大變得微小細密。
  20. ( 3 ) with the condition of table 4. 3, with increasing of temperature the average reflectance value decreases and the minimum reflectance point moves towards red direction. furthermore, temperature has little effect on the extinction coefficient ( k ). however, the refractive index value decreases remarkably when the temperature reaches about 240, but it does not change much when the temperature is below 180 and the thickness of the films increase when increasing the temperature

    （ 3 ）隨著溫度的增加薄膜的平均反射率降低並且反射低谷向長波方向移動;溫度對消光系數k影響不大;當溫度低於180薄膜的折射率變化不大，當溫度達到240左右時薄膜的折射率明顯降低;薄膜的厚度隨溫度的增加而增加;隨著溫度的增加tio2的晶體結構由混晶變為單一的銳鈦礦相，薄膜的表面的顆粒由多變少，表面形貌由粗糙多孔變得細膩平滑。
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