納米晶硅 的英文怎麼說

中文拼音 [nàmǐjīngguī]
納米晶硅 英文
nanocrystalline silicon
  • 納 : Ⅰ動詞1 （收進來; 放進來） receive; admit 2 （接受） accept; take in 3 （享受） enjoy; take deligh...
  • 米 : Ⅰ名詞1. （稻米） rice 2. （泛指去殼或皮的可吃的種子） shelled or husked seed 3. （姓氏） a surname Ⅱ量詞（公制長度的主單位） metre
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 納米 : aalbert
  1. Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film

    薄膜中納米硅晶粒的擇優生長
  2. Environmental mineral fibre mainly points crude minerals like sepiolite and palygorskite species layer - chained magnesian silicate, which have excellent physical - chemical properties and are rare environmental mineral materials in the world nowadays because of the rigor of their form conditions. the single crystals of palygorskite are mostly acicular and fibrous, 30 - 80nm of crystal diameter, and are typical crude nano - rank materials

    環境礦物纖維主要指以海泡石、坡縷石類層鏈狀鎂質硅酸鹽為主的天然礦物，具有優良的物化性能，由於其形成條件苛刻，為世界性稀缺的環境礦物材料，其單晶多為針狀、纖維狀，晶體直徑為30 - 80nm ，屬典型的天然納米級材料。
  3. The nano - crystals of si are found embedded in the amorphous matrix in the unannealed sample. the crystallinity of the films is increased with raising deposit temperature

    研究發現，未經退火處理的薄膜是納米硅品粒鑲嵌于非晶介質中，並與氧化硅晶粒形成復合的特殊結構。
  4. As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications

    另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。
  5. The silica coated nanometer particles after containning in n2 for 2h within 600 c is the crystallization form. thus it can sufficiently work the nano effect. the surface of the composite particles has no crystal water and no absorbing water. the anti - oxidation ability increase after coating

    鐵納米復合粒子為結晶態，納米粒子在6000c ，氮氣保護下，納米粒子不重新結晶，殼層二氧化硅包裹在納米鐵表面阻斷了納米粒子之間的重新原子排列。
  6. Wang yongqian, liao xianbo, ma zhixun, et al. solid - phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing [ j ]. applied surface science, 1998 135 : 205

    薛清，郁偉中，黃遠明.利用快速退火法從非晶硅薄膜中生長納米硅晶粒[ j ] .物理實驗， 200222 （ 8 ） : 17
  7. Sichuan has completed the industrialization for a series of high - performance new materials and modified materials such as pps, high - end rare earth permanent magnet, lanthanum glass, high purity tellurium, fluoro rubber, organic silicon, high performance processing for general - purpose plastic, nano materials and wisker materials

    已完成聚苯硫醚、高檔稀土永磁材料、稀土鑭系玻璃、高純碲、氟橡膠、有機硅、通用型塑料高性能化、納米材料、晶須材料等一批高性能新材料和改性材料的產業化。
  8. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。
  9. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  10. Ammonia played a critical role in the vertical alignment of cnts, and the possible reason was that in 850 the atomic hydrogen decomposed from ammonia reacted with amorphous carbon to form volatile products to keep the metal surface clean, and mechanical leaning against neighboring tu bes established a morphology of vertical alignment

    當基體為單晶硅、催化劑鎳膜厚度為20nm 、氨氣氣氛、生長溫度為850時，得到了定向生長的納米碳管。其原因可能是850時氨氣分解的氫原子和無定形炭生成了易揮發物質，從而保持催化劑的活性使納米碳管依靠相鄰碳管之間的斥力定向生長。
  11. An array of non - aligned monocrystalline zinc oxide nanowires zno nws is fabricated on a silicon substrate by thermal evaporation

    使用熱蒸發的方法在硅基底上制備了非定向氧化鋅zno單晶納米線陣列。
  12. Through strength tests and xrd tests for cemented stone, the paper presents action mechanism of the nanometer materials in the cement hydration and hardening process : pozzolanic effect, filling effect, acceleration action for the cement hydration, and improving action for microstructure. from the four aspects, the modified mechanism of the nanometer silica fume and ordinary silica fume in cement paste are compared. the analysis results show that the particular properties of the nanometer silica fume include particle fineness, crystal structure and surface hydroxy, etc. a serial of laboratory tests are performed to study physical and mechanic properties of the clay with the addition of the nanometer silica fume

    結合水泥石強度試驗和xrd試驗，從火山灰效應、填充效應、水泥水化促進作用和微結構改善作用等方面探討了三種納米礦粉在水泥水化硬化過程中的作用機理；從這四個方面出發，對比分析了納米硅粉和普通硅粉作用機理的異同點，分析表明，納米硅粉的優異特性主要表現為顆粒細度、晶體結構、表面羥基等特性。
  13. Thus mechanical properties, heat resistance properties and solvent resistance properties of pu are greatly enhanced. crystal forms of composite materials, surfacial reactivity and adsorption assemble properties of zeolite are discussed in this paper by means of xrd, ftir and tg etc. the test results of xrd prove that mmt can be exfoliated into nanocomposites in pu / mmt, while zeolite keep its original crystal structure in pu / zeolite. the spectras of ftir prove that tdi can graft on the surface of the zeolite

    Xrd測試結果證實了有機蒙脫土在聚氨酷體系中能夠剝離成納米粒子，而聚氨醋/沸石分子篩復合材料中分子篩仍保持原來的晶型結構; ftir譜圖驗證了異氰酸酷（ tdi ）可太原理工大學碩士學位論文摘要與沸石分子篩表面的硅經基進行接枝反應形成穩定的化學鍵;而tg分析結果則進一步證實了分子篩的穿孔機理。
  14. ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels

    胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。
  15. This text attempts to regard silica as shell materials, regard nanometer iron and carbonyl iron particle as core materials to prepare a kind of new - type absorbent. the structur of the core - shell particles were characterized by ftir, tem, sem, xps, xrd etc. the properties of magnetism, heat, crystalization, ectromagnetic were characterized by vsm, tg - dta, network vectorial analysis instrument

    本文以二氧化硅為殼層材料，以納米鐵以及羰基鐵粒子為核層材料，制備一種新型的吸收劑粒子。用ftir ， tem ， sem ， xps ， xrd表徵了復合粒子的結構，利用vsm ， tg - dta ，網路矢量分析儀等分析了材料結構改變對材料磁性能，熱性能，結晶性能，電磁參數等性能進行了分析。
  16. We use the laser output ( 320 nm, 200 fs ) of optical parametric amplifier ( opa ) in < wp = 5 > an active passive mode - locked femtosecond ti - sapphire laser operating at a repetition rate of 1khz as a exciting resource to develop optically pumped stimulated emission of zno thin films. when rectangular stripe laser irradiates thin films, optical resonant cavity is naturally formed between two nanocrystallites along with the rectangular laser stripe and planar weveguide confines the light scattering

    利用飛秒激光器作為光泵浦激發光源，研究了氧化鋅薄膜的光泵浦受激發射，當條形光斑輻照薄膜樣品時，將沿著光斑條由氧化鋅納米晶面自然地形成光學諧振腔，由於平面介質波導結構限制光散射，所以成功地觀測到二氧化硅襯底上的納米氧化鋅（ zno ）薄膜的紫外受激發射。
  17. When deposit temperature is raised from 450 to 500, the size of nano - crystals is increased from l ~ 4nm to 5nm. a few 8162 nano - crystals are also found, which are derived from the amorphous oxide in the matrix. simultaneity, some special patterns appear while nano - crystals move and rearrange

    薄膜中的結晶程度隨沉積溫度的升高而提高，納米硅晶粒的尺寸由450時的1 4nm增大到5nm以上，氧化程度也隨之加深，非晶介質中的氧化物逐漸向氧化硅的晶態轉變，同時納米顆粒在晶粒遷移和重排過程中局部形成特殊形貌的團聚物。
  18. In this paper, molecular dynamics simulation is carried on the nanometric cutting of defect - free monocrystalline silicon. based on simulations, a reasonable explanation is given to the forming mechanism of chip and surface machined in the cutting process of monocrystalline silicon. moreover, the feasibility of brittle - ductile transition of monocrystalline silion is studied with the method of first principle stress

    對內部無缺陷的單晶硅的納米切削過程進行了分子動力學模擬.通過模擬結果，對單晶硅納米切削中的切屑形成過程和加工表面的形成過程做出了合理的解釋.並用第一原理應力計算方法對單晶硅納米切削過程中的脆塑轉變的可行性進行了研究
  19. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
  20. Research on nickel induced silicon nanocrystal growth

    鎳誘導納米晶硅薄膜的生長
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