細晶體 的英文怎麼說

中文拼音 [jīng]
細晶體 英文
crystallite
  • : 形容詞1 (條狀物橫剖面小) thin; slender 2 (顆粒小) in small particles; fine 3 (音量小) thin ...
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Now, in a study that took more than five years to complete, rockefeller university researchers, in collaboration with a team of bacteriologists at the university of wisconsin, madison, have become the first to solve the structure of a protein complex that protects these cells from singlet oxygen

    現在,洛克菲勒大學的研究人員與威斯康星大學的菌學家一同協作,歷經5年多時間的研究,首次獲得了一種能夠保護胞免受單態氧損傷的蛋白復合結構。
  2. Thin - walled cells of callow stirpe ' s cortex contain saliferous vacuoles, and pulp cells contain crystals

    幼莖皮層薄壁胞中含有含鹽液泡泡,髓胞中含有
  3. Less perfect forms, known as " boat " and " carbonado " are clusters of tiny crystals

    稍次些的則由小的群組成,稱為「圓粒鉆石」和「黑鉆石」 。
  4. Less perfect forms, known as " boart " and " carbonado ", are clusters of tiny crystals

    稍次些的則由小的群組成,稱為「圓粒鉆石」和「黑鉆石」 。
  5. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dk enclosure, 6. 0 to 25 mhz frequency range - fundamental thickness - shear mode, at - cut, for operation over wide temperature ranges non - temperature controlled - full assessment level

    振蕩器用冷焊密封石英振子詳規范. dp外殼6 . 0至25mhz頻率范圍.寬溫范圍
  6. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 17 to 75 mhz frequency range - third overtone thickness - shear mode, at - cut, for operation over narrow temperature ranges temperature controlled - full assessment level

    振蕩器用冷焊密封石英振子詳規范. dn dq和dp外殼17至75mhz頻率范圍.窄溫范圍
  7. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 50 to 125 mhz frequency range - fifth overtone thickness - shear mode, at - cut, for operation over wide temperature ranges non - temperature controlled - full assessment level

    振蕩器用冷焊密封石英振子詳規范. dn dq和dp外殼50至125mhz頻率規范.寬溫范圍
  8. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 50 to 125 mhz frequency range - fifth overtone thickness - shear mode, at - cut, for operation over narrow temperature ranges temperature controlled - full assessment level

    經質量評定的振蕩器用冷焊封石英振子詳規范. dn dq和dp外殼, 50至125mhz頻率規范.窄溫范圍
  9. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, 47 u 2, dq and dp enclosures, 17 to 75 mhz frequency range - third overtone thickness - shear mode, at - cut, for operation over wide temperature ranges non - temperature controlled - full assessment level

    振蕩器用冷焊密封石英振子詳規范. dn 47u 2 dq和dp外殼17至75mhz頻率范圍.寬溫范圍
  10. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 0. 8 to 20 mhz and 3. 0 to 30 mhz frequency ranges - fundamental thickness - shear mode, at - cut, for operation over narrow temperature ranges temperature controlled - full assessment level

    振蕩器用冷焊密封石英振子詳規范. dn dq和dp外殼0 . 8至20mhz和3 . 0到30mhz頻率范圍.窄溫范圍
  11. The fine focusing or accommodation of the human eye is a function performed by the crystalline lens.

    人眼的精聚焦或調節的功能是由水執行的。
  12. It is the ideal equipment to transport or adjust non - glutinosity solid powder, small grain and crystalloid material

    特別適用於無粘度的固粉料,小顆粒料,料的輸送與調節。
  13. Skin cells just in front of them differentiate to form lenses.

    它們前面的皮膚胞就分化而形成
  14. Environmental scanning electron microscopy ( esem ) observation of f2 mycelium cultured in liquid medium with 100mg / l of cadmium showed that there were crystalline precipitations attached to the surface of f2. transmission electron microscopy ( tem ) and energy - dispersive analysis microscope ( edam ) examination revealed that there were many granules with high content of cadmium around the cell wall

    F2在100mg l鎘濃度下培養后,經環境掃描電鏡( esem )觀察顯示,菌表面有較大狀沉澱物;透射電鏡( tem )和能譜分析( edam )表明,胞壁周圍形成大量小的高鎘含量沉澱物。
  15. There are many adaptive changes in the two research subjects ( artemisia. songarica schrenk. and seriphidium. santolinum ( schrenk ) polijak. ) in morphology and anatomy, such as with the increase of the daily age, the root - shoots ratio increased ; the root became stronger ; the ratio of leaf volume and leaf area increased ; the volume of epidermic cell decreased ; the cut - icle and phellem layer on the surface of root thickened. stoma caved in leaf ; epidermal hair of leaf and stem well - developed, palisde tissue developed well, the cell gap decreased ; the spongy tissue disappeared ; leaf is kinds of isolateralthat is the typical xeromorphic structure ; crystal cell and fibric cell increased ; conducting tissue and mechanical tissue developed well ; bundle sheath appeared

    實驗研究的兩種菊科( compositae )植物(準噶爾沙蒿( artemisiasongaricaschrenk )和沙漠絹蒿( seriphidiumsantolinum ( schrenk ) poljak . ) ) ,形態解剖方面的變化表現為:隨日齡增加,根長/株高比值日益增大;根系逐漸發達;積與葉面積比逐漸增大;表皮積變小;角質層增厚;根外部出現加厚的木栓層;氣孔下陷;葉、莖部的表皮毛密布,柵欄組織日益發達;而胞間隙日漸變小;海綿組織逐漸消失;葉面結構常為典型旱生結構? ?等葉面;胞及纖維胞數目增多;輸導組織、機械組織日漸發達;具有維管束鞘等等。
  16. The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.

    再略為詳地討論液相外延生長過程,因為生長是實現集成光路使用的必不可少的一個環節。
  17. In that sort of half reverie which permits one to participate in an event and yet remain quite aloof, the little detail which was lacking began obscurely but insistently to coagulate, to assume a freakish, crystalline form, like the frost which gathers on the windowpane

    這種迷迷糊糊的幻想狀態既允許一個人置身於一個事件之中又叫他保持冷漠,在這種狀態中那尚未可知的小小節開始模糊而又執著地凝聚,形成怪異的,像窗子上結的霜,那些霜樣的顯得這么怪誕,這么徹底無拘無束,這么奇形怪狀,然而它們的命運卻要由最最嚴酷的自然法則操縱,而我心中產生的感情亦是一樣。
  18. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導分立器件gp gt和gct級3cg110型pnp硅小功率管.詳規范
  19. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導分立器件gp gt和gct級3dg130型npn硅高頻小功率管.詳規范
  20. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導分立器件gp gt和gct級3dg182型npn硅小功率高反壓管.詳規范
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