結晶粒粗大化 的英文怎麼說

中文拼音 [jiējīnglìcūdàhuà]
結晶粒粗大化 英文
coarsening
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 粒 : Ⅰ名 （小圓珠形或小碎塊形物） small particles; grain; granule; pellet Ⅱ量詞（用於粒狀物）
  • 粗 : Ⅰ形容詞1 （長條東西直徑大的） wide （in diameter）; thick 2 （長條東西兩長邊的距離寬的） wide （i...
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. Beryllium powders with the same particle size and various contents of beo were prepared by pre - sintering - acid washing processes initiatively and the influence of beo alone on o mys of beryllium was observed and some new results have been obtained - compared with the content of beo, the distribution of beo in beryllium has more critical influence on mys ; finely dispersed beo along the grain boundaries and in the matrix results in the dispersion strengthening of beryllium matrix and thereby the higher mys value ; on the contrary, the coarser beo particles clustering on the grain boundaries results in negative influence on o mys

    開創性地用預燒結? ?酸洗工藝制備了相同粒度、不同beo含量的鈹粉，從而開展了beo含量單獨對鈹材_ （ mys ）影響的研究，得出一些新的結果：與beo含量相比， beo在鈹中的分佈狀態對_ （ mys ）的影響更大。沿晶界、晶內彌散分佈的較細小beo對基體鈹有彌散強化作用，使_ （ mys ）即較高；如果beo較粗大地成簇狀聚集在晶界，反而對_ （ mys ）有不良的影響。
  2. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  3. The surface of ce02 - ti02 films were very smooth and difficulty to crystallization. the ceo2 - tio2 complex films were nanocrystalline microstructure or microcrystalline even if to heat the substrates or to anneal the films. the ceo2 and tio2 nanocrystalline were not easy congregate and bigger because of heterogeneity interface disturb and have many defect

    組成ceo _ 2 - tio _ 2混合薄膜顆粒粒徑在納米尺度范圍3 ? 50nm ，與純ceo _ 2 、 tio _ 2薄膜相比，具有更小的表面粗糙度和更難結晶，這是由於異質材料晶界的相互干擾，使同質顆粒之間難于聚集而結晶長大，薄膜處于納米晶或雛晶態，即使加熱基片或薄膜進行熱處理也無明顯變化。
  4. The transformation of the platelike ? - alfesi to spherical a - alfesi during homogenization is markedly accelerated by the addition of minor mn and cr in al - mg - si alloy, as well as the recrystalization of alloys during hot extrusion has been inhibited, and ? " strengthening phase improved to precipitate in the process of aging

    合金鑄錠均勻化處理過程中，形成含mn 、 cr的第二相al （ mnfe ） si和al （ mncrfe ） si等，這些顆粒加速長棒狀的b - alfesi相向尺度較小的粒狀的- alfesi相轉化，減少了粗大結晶相對合金性能的不利影響。
  5. ( 2 ) with the condition of table 4. 2, the average reflectance decreases and the low reflectance vale moves towards shortwave, the influence on the extinction coefficient ( k ) of the films is very little, refractive index has trend of decrease and the thickness of the films decrease when increasing the total gas pressure, and the refractive index fix on a constant value when the total pressure exceeds a certain value. the phase of tio2 change from rutile to anatase and the size of surface grain change from big to small

    （ 2 ）隨著總氣壓的增加薄膜的反射低谷向短波方向移動;總氣壓對消光系數k影響不大;隨著總氣壓的增加薄膜的折射率出現了下降的趨勢，但當總氣壓達到一定的量值時折射率的變化趨于穩定;薄膜的厚度隨總氣壓的增加而減少;隨著總氣壓的增加tio2的晶體結構由金紅石相向銳鈦礦相轉變，薄膜的表面的顆粒度大小由粗大變得微小細密。
  6. ( 3 ) with the condition of table 4. 3, with increasing of temperature the average reflectance value decreases and the minimum reflectance point moves towards red direction. furthermore, temperature has little effect on the extinction coefficient ( k ). however, the refractive index value decreases remarkably when the temperature reaches about 240, but it does not change much when the temperature is below 180 and the thickness of the films increase when increasing the temperature

    （ 3 ）隨著溫度的增加薄膜的平均反射率降低並且反射低谷向長波方向移動;溫度對消光系數k影響不大;當溫度低於180薄膜的折射率變化不大，當溫度達到240左右時薄膜的折射率明顯降低;薄膜的厚度隨溫度的增加而增加;隨著溫度的增加tio2的晶體結構由混晶變為單一的銳鈦礦相，薄膜的表面的顆粒由多變少，表面形貌由粗糙多孔變得細膩平滑。
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