結晶缺陷 的英文怎麼說

中文拼音 [jiējīngquēxiàn]
結晶缺陷 英文
crystalline imperfection
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. The methods that will be discussed are based on concepts derived from various fields, namely electron optics, the interaction of electrons with crystals, elasticity theory, crystal defect theory and crystallography

    我們要討論的途徑是以源自多種領域的觀念為基礎，也就是電子眼，電子和晶體之間的干擾，彈性理論，晶體缺陷理論和結晶學。
  2. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  3. Performance investigation of photonic crystal with flawed and nonperiodic structures

    缺陷和變周期結構光子晶體特性研究
  4. Xrd, sem, tem and hrtem were applied to analyze the phase composition and microstructure, as well as crystal defects in the rps tin coating

    利用xrd 、 sem 、 tem及hrtem等分析手段研究分析了塗層的結構、微觀組織，以及塗層內的晶體缺陷。
  5. The result showed that crystal defect of nano - cuo prepared by pressure - hydrothermal method is less, structure is more stable, the process of charge and discharge is more steady, and duration is longer

    結果表明，壓力-熱液法制備的納米氧化銅晶格缺陷少，結構穩定，充放電過程平穩，且持續時間長。
  6. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  7. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。
  8. The results show that enamel fish scales have been effectively restrained by this mill addition

    實驗結果表明，在搪瓷釉中磨加超細鎳酸鋰晶體有效地抑制了搪瓷材料魚鱗爆缺陷的產生。
  9. However, all of them had the same insuperable problem that the epitaxy of gan thin film had to be happened in high temperature no less than 1000 c. as a result, impurity as well as structure defect will be induced

    上述方法均面臨一個問題，那就是gan薄膜的生長要在約1000的溫度下進行，其結果是造成晶格結構缺陷的產生。
  10. Effect of structure and defect on photonic band gap of 2d photonic crystal

    二維光子晶體結構和缺陷對光子禁帶的影響
  11. The paper also analyzed the crystal defeat formed in the process of growth and put forward to the solution, furthermore, the mechanism of needle - like growth was discussed

    並對晶須生長過程中所形成的各種晶體缺陷進行了分析，提出了解決辦法。同時對羥基磷灰石晶須針狀生長的結晶學和界面動力學機理進行了探討。
  12. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  13. In order to eliminate the defects, especially te precipitates, cd1 - xznxte slices were annealed in cdzn vapor in the present researches. the variation of te - rich phases in morphology and sizes during the annealing and its effects on the optical and electrical properties of the crystals were examined in detail. the defect chemistry calculations were made

    本文的主要內容就是研究退火過程中cd _ （ 1 - x ） zn _ xte晶體內富te相的形態、大小的變化及其對晶體光、電性能的影響，並通過缺陷化學計算，結合實際的退火實驗，制定相應的退火工藝，改善晶體性能。
  14. Three parts are discussed, respective, ( 1 ) the nanostructure in the perfect of single crystal copper structure and perfect titanium structure. ( 2 ) the tensile deformation mechanism and stress analysis of the point defects effects. ( 3 ) the significance of effect as size reduced

    本論文所探討的內容可分為三部分，分別為： （ 1 ）針對完美單晶銅結構與完美鈦結構的拉伸變形研究（ 2 ）包含了空孔點缺陷的拉伸變形結構研究（ 3 ）針對尺寸縮小后所造成的表面效應影響作一探討。
  15. In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last, use high resolution tem and eds to observe and identify the nature of microdefects

    發現幾乎所有高位錯密度的si - gaas單晶的表層都具有網路狀胞狀結構或系屬結構，首次對該胞狀結構和系屬結構的形成機制進行了研究；直接觀察微缺陷，配合eds （能量色散譜）鑒定si - gaas中微缺陷的物理本質，同時分析其產生原因，討論與位錯的相互作用。
  16. Aim at the dtc ' s blemish mentioned above and the direction of dtc technique development, the dissertation put great emphasis on the work as follows, with an eye to exalt dtc system function : ( 1 ) a new speed - flux observer of an induction motor is proposed to enhance the accuracy of flux observing, which is an adaptive closed - loop flux observer and different from the traditions. a new adaptive speed - observation - way is deduced out according to the popov ' s stability theories ; ( 2 ) to improve the performance of dtc at low speed operation, we have to exalt the accuracy of the stator flux estimation and a new way of bp neural network based on extended pidbp algorithm is given to estimate and tune the stator resistance of an induction motor to increase the accuracy of the stator flux estimation ; ( 3 ) digital signal processor is adopted to realize digital control. an device of direct torque control system is designed for experiment using tms320lf2407 chip produced by ti company ; ( 4 ) bring up a distributed direct torque control system based on sercos bus, sercos stand for serial real time communication system agreement which is most in keeping with synchronous with moderate motor control ; ( 5 ) the basic design frame of the hardware and software of the whole control system is given here and some concrete problem in the experiments is described here in detail

    針對上面提到的直接轉矩控制的缺陷和未來直接轉矩控制技術發展方向，本論文重點做了以下幾個方面的工作，目的在於提高dtc系統的綜合性能： （ 1 ）提出一種新型的速度磁鏈觀測器，新型的速度磁鏈觀測器採用自適應閉環磁鏈觀測器代替傳統的積分器從而提高磁鏈觀測的精度，並且根據popov超穩定性理論推導出轉速的新型自適應收斂律； （ 2 ）改善系統的低速運行性能，主要從提高低速時對定子磁鏈的估計精度入手，提出了一種提高定子磁鏈觀測精度的新思路? ?利用基於bp網路增廣pidbp學習演算法來實時在線地修正定子電阻參數； （ 3 ）採用數字信號處理器dsp實現系統全數字化硬體控制，結合ti公司生產的tms320lf2407晶元，設計了直接轉矩控制系統的實驗裝置； （ 4 ）提出了基於sercos總線網路化分散式的直接轉矩控制系統， sercos （ serialrealtimecommunicationsystem ）是目前最適合同步和協調控制的串列實時通信協議； （ 5 ）基本勾勒出整個控制系統的硬體和軟體設計基本框架，詳細描述一些實驗中的具體的細節問題。
  17. Moreover, the investigation for the ma of cu - cr indicates that : with using of protective atmosphere, active carbon has a good effect on the oxidation control during milling ; the structure refining and increasing of interface and defect result in the formation of non - equilibrium phase

    此外，對cu - cr難互溶體系的ma研究表明：粉末的結構細化及界面、缺陷的產生導致了ma過程中亞穩相（氧化物非晶、過飽和固溶體）的轉變與形成；與保護性氣氛相比較，活性炭對ma過程中的氧化現象有良好的控製作用。
  18. By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism, the structure of the energy band and the crystal potential field

    本文充分利用半導體的能帶理論，從薄膜晶體結構、能帶結構和晶體勢場的角度，分析載流子的遷移、散射以及載流子的產生和晶體結構缺陷對載流子的捕獲。
  19. The variation of product layer diffusivity with these factors was explained by its dependence on the concentrations of defects in cao and caso4 crystals

    產物層擴散系數的變化可以其受氧化鈣及硫酸鈣結晶缺陷的濃度的影響來解釋。
  20. Discussion of roles of bonding, structure ( crystalline, defect, energy band, and microstructure ), and composition in influencing and controlling physical properties

    探討各物質合成、結構（結晶、缺陷、能量束和微結構）及成分對物理性質的掌握和影響。
分享友人
分享到 Line

分享到臉書