結晶錯位 的英文怎麼說

中文拼音 [jiējīngcuòwèi]
結晶錯位 英文
crystallographic misorientation
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 錯 : Ⅰ形容詞1 （錯誤; 不正確） wrong; mistaken; erroneous 2 （用於否定: 壞; 差） bad; poor 3 （交叉; ...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. All main ways of metal strengthening including grain refining strengthening, dislocation strengthening, grain boundary and substructure strengthening, second phase strengthening, solid solution strengthening, as well as trip strengthening and so on, have totally found expression in the adi

    金屬強化的幾種主要方式：細晶強化，位錯強化，晶界與亞結構強化，第二相強化，固溶強化，細晶強化以及trip強化等都在等溫淬火球鐵中得到了體現。
  2. The lath martensite nanometer structure can play the role of fine - particle strengthening and dislocation strengthening as well as coordinate the distribution of dislocation. it is hopeful that the strength and toughness of material with this structure can be increased at the same time

    板條馬氏體組織納米化結構，可起到納米晶粒的細晶強化與位錯強化的聯合作用，並可協調位錯分佈，有望使具有這種組織的材料強度和韌性同時得以提高。
  3. Presents the microstructure evolution in aluminum a nd copper after deformation by cold rolling in the strain range of 10 to 50 % red uction using tem and points out three types of dislocation structures are typica l and two of them are common for both materials and these two common types are f ound in non - cube grains and can be distinguished by crystallographic orientatio n of dislocation boundaries in the grains and the third type of structure is obs erved in cube grains, and concludes that grain orientation is important in deter mining the structure type but some other metallurgical parameters also have a ro le to play

    採用tem對冷軋多晶銅與多晶鋁的形變顯微組織演變進行了對比研究.結果發現：多晶銅及多晶鋁形變顯微組織中均含有三類典型的位錯結構類型，其中的兩種結構特徵在兩種材料中是相似的，這兩種類型結構存在於非立方取向晶粒，可通過晶粒中位錯邊界的晶體學取向加以區別，另一類型結構存在於立方取向晶粒；晶粒的晶體學取向決定了其形變顯微組織類型，但其它冶金學因素對顯微組織也有影響
  4. In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last, use high resolution tem and eds to observe and identify the nature of microdefects

    發現幾乎所有高位錯密度的si - gaas單晶的表層都具有網路狀胞狀結構或系屬結構，首次對該胞狀結構和系屬結構的形成機制進行了研究；直接觀察微缺陷，配合eds （能量色散譜）鑒定si - gaas中微缺陷的物理本質，同時分析其產生原因，討論與位錯的相互作用。
  5. The alloys, which were cold - worked followed by recrystallization annealing, display cyclic softening in the range of low strain because the cyclic stress - strain curve lies below the monotonic stress - strain curve, and show cyclic hardening in the range of high strain because the cyclic stress - strain curve lies above the monotonic stress - strain curve

    在低應變范圍，冷加工后經再結晶退火處理的錯合金的循環應力一應變曲線位於單調拉伸曲線的下方，表現為循環軟化;在高應變范圍則位於單調拉伸曲線的上方，表現為循環硬化。
  6. Another is shear - model fracture which is thought that it is associated with dislocation motion ( shear + rotation ) of crystal at microlevel, fragmentation of solid at mesoscale level and large plastic strains at the macroscopic level

    剪切型斷裂在微觀上與晶粒內或晶粒間的滑移和位錯有關，細觀上與集中變形帶中的微剪切面集中有關，宏觀上則與結構內的集中剪切帶有關。
  7. In the relatively high dislocation density areas, dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure. here the profile of c concentration in the dimension of a cellular structure is " u " - shaped. the cell diameter increases as the dislocation density decreases, dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure

    發現晶片中位錯密度和分佈嚴重影響碳的微區分佈，高密度位錯區，位錯形成較小的胞狀結構，胞內無孤立位錯，碳在單個胞內呈u型分佈；較低密度位錯區，胞狀結構直徑較大，胞內存在孤立位錯，碳在單個胞內呈w型分佈。
  8. Under the careful retrospection and analysis on the previous and recent experiments about mechanical behavior of nanocrystalline metals performed by almost main investigators, the dislocation and atomic diffusion is believed to contribute hardly to the deformation of nanocrystalline alloy, and a model based on thermal activation process was applied to fit the experimental data of nanocrystalline ag

    結果表明，納米晶金屬ag的不僅具有比粗晶ag高2 - 6倍的拉伸和壓縮強度，而且在大范性形變階段顯示了極低的加工硬化和應變速率敏感性。結合位錯理路和非晶合金形變特徵，提出納米晶金屬ag的塑性變形主要由於晶界滑移貢獻。
  9. From an examination of the tensile behavior of cz ly12 alloys under different temperature and strain rate, two kinds of deformation and intergranular fracture behaviors were observed that were opposite to the characteristic strain rate range in fine - grained superplasticity. the mechanisms are described as follows. the high ductility achieved at high strain rate is generally attributed to the dominant role of gbs accommodating mechanisms, which is considered as dislocation creep within grains controlled by subgrains

    研究選用自然時效淬火態的ly12鋁合金，進行了一系列不同溫度和應變速率下的單軸拉伸試驗， 480下，觀察到與傳統細晶超塑性特徵區間相反的行為：較高應變速率下，動態再結晶使晶粒細化，促進了晶界滑移，亞晶界控制的晶內位錯蠕變是晶界滑移的主要協調機制。
  10. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  11. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  12. In addition, the growth mechanism of c - axis was screw dislocation growth or rough interface growth, but that of a, b - axis was two - dimension nucleation growth. because in low supersaturation, the speed of helix dislocation growth and rough interface growth was higher than that of two - dimension nucleation growth

    另外，由於羥基磷灰石晶體結構的特點， c面主要以螺旋位錯生長和粗糙面生長兩種機制為主，而a 、 b面則主要以光滑面的二維成核生長為主。
  13. In order to improve the properties of materials, one needs to understand the structural relationship between interface and matrix of the materials, such as interface atomic structure, misfit dislocation, chemical bond structure, stress field distribution, composition segregation etc. there are tremendous research works on the grain boundary and interface structures during last century and the sophisticated theory about grain boundary and interface, i. e. coincidence site lattice and 0 - lattice theories had been developed simultaneously

    眾所周知，材料的宏觀性質是由其微觀結構所決定的，因此，為了改善材料的宏觀性能我們有必要弄清楚材料的界面與基體之間的結構關系，如界面的原子結構、失配位錯、化學鍵合、應力場的分佈等等。在上世紀，人們已對晶界和相界面結構進行了大量的研究，同時，相關的理論如「重位點陣」和「 o -點陣」理論也發展成熟。
  14. The refinement mechanism of grain at room temperature can be described as dislocation tangle and dislocation node form in the initial grain with severe plastic deformation, then the dislocation node form subgrains or grains. subgrains become grains by snipping of the subgrain boundaries under the action of shearing stress

    室溫ecap細化晶粒的機理可描述為：隨著強烈塑性變形的進行，原始晶粒中產生了很多位錯纏結和位錯胞，進而位錯胞崩塌變為亞晶或晶粒，亞晶粒在後續ecap剪應力作用下，通過亞晶界被剪斷而變為晶粒。
  15. Misfit characters effect on the dislocation structure and nucleation mechanism in fcc epitaxial crystals

    失配性質對面心立方外延晶體失配位錯結構及其形核機制的影響
  16. Computer simulation of self - organised dislocation structures during the cyclic deformation in a copper single crystal

    計算機模擬循環形變銅單晶體的自組織位錯結構
  17. Electronic structure of dege dislocation in single crystal nickel - base alloy

    單晶鎳基合金體刃位錯的電子結構
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