結的擊穿 的英文怎麼說

中文拼音 [jiēdejīchuān]
結的擊穿 英文
junction breakdown
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 的 : 4次方是 The fourth power of 2 is direction
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  1. This heating helps to break down weak spots in the dielectric that otherwise might pass through the electrode undetected, only to fail during a later spark or hipot test

    這熱量幫助擊穿電線絕緣較薄的地方?否則線材通過電極而沒有被檢測到?結果在以後的火花測試和高壓絕緣試驗將會失效。
  2. The chemical composition and microstructures of the insulating thin films prepared by different methods were analyzed by x - ray diffraction ( xrd ) and scanning electron micrograph ( sem ) ; other properties such as electric resistance, the breakdown field strength and dielectric properties were evaluated using high resistance meter, voltage resistance meter and precision impedance analyzer respectively

    採用x射線衍射儀（ xrd ）對表面絕緣薄膜的物相組成進行了分析，掃描電子顯微鏡（ sem ）對表面絕緣薄膜的微觀結構進行了研究，並用絕緣電阻測試儀、耐壓測試儀和精密阻抗分析儀分別對絕緣膜進行絕緣電阻率、擊穿場強和介電性能的測試。
  3. Interface charge has a profound influence on the breakdown voltage of flr structure. on severe condition it can make the outer flr far from main junction disfunction

    界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。
  4. In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points

    在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。
  5. A series of multi - pulse experiments are performed at breakdown voltage up to 400kv, peak current up to 30ka with an interval of 5ms, which shows spark gap switch could be obtained good insulation recovery in several milliseconds under the condition of water dielectric pulse power modulator with low load

    在擊穿電壓400kv ，峰值電流30ka ，脈寬40ns的工作參數下，採用吹氣的辦法（氣流速度30m / s ） ，使氣體火花開關多脈沖運行間隔達到5ms ，實驗結果與理論估計相符。
  6. Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical

    通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出：弧根周圍空氣的熱電離導致了電弧的發展，靜電場力對電弧的發展起到了加速作用，電擊穿僅發生在閃絡最終的跳躍階段；通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數，得到了不同階段電弧（電弧起弧階段、電弧發展階段及完全閃絡）的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。
  7. And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown

    而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。
  8. It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

    通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。
  9. The results showed that with the increase of the field strength, the conduction of the films was separately dominated by ohm ' s law, schottcky effect, pool - frenkel effect, and fowler - nordheim tunneling breakdown

    結果顯示，隨著場強的增加，導電機制分別以歐姆定律、肖特基效應、普爾弗蘭凱爾效應，和f - n為主，最後發生f - n擊穿。
  10. The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer

    模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。
  11. Simulation result shows that nearly 100 % breakdown voltage of the plane junction can be realized

    模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100 %達到平行平面結的理想值。
  12. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值
  13. Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole

    熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。
  14. The conclusion that ez is more important during the breakdown of rf ion source is made out by comparing ez and e 6 before breakdown, and then, the breakdown criterion of rf ion source is deduced, and the relation between breakdown voltage and pressure is analyzed too

    通過比較擊穿前高頻電場的軸向和幅向分量，得出了軸向電場在高頻離子源擊穿中起主要作用的結論，並進而推導出了高頻離子源的擊穿判據，得出了氣體擊穿時離子源擊穿電壓和放電管內氣壓的關系。
  15. And then some terminal techniques on pic, devices simulation theory, resurfs effect and medici software are presented. at last three kinds of high voltage power devices have been designed and simulated. based on the analysis of the breakdown voltage and electric field distribution of the high power devices, the key physics and structural parameters effects on the breakdown voltage are found

    本文首先介紹了國內外功率集成電路的發展狀況，然後介紹了高壓集成電路中的幾種終端技術、 resurf效應、器件模擬的基本理論和medici器件模擬軟體，最後對三種型號的高壓功率器件的擊穿特性進行了分析和計算機模擬，指出了影響器件電壓的關鍵的物理和結構參數，並對這三種型號的器件進行模擬，得出的電特性曲線和參數基本上與公司給出的一致。
  16. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。
  17. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  18. A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices

    摘要提出一種二氧化矽多晶矽二氧化矽夾心深槽場限制環新結構來提高晶體管的擊穿電壓。
  19. The results provide a theoretic basis to research the multi - pulse operation of high power spark gap. as the breakdown mechanism is concerned, the influence of rough electrode on the v / p ( switch breakdown voltage / gas pressure ) curve is analyzed originally using breakdown possibility. the requirements of flat v / p curve are presented, which provides a theoretical basis for controlling and utilizing the curve

    對氣體火花開關的擊穿機理，創新的利用擊穿概率分析了粗糙電極對氣體火花開關v / p曲線影響的物理機制，給出了利用細小結構構造平穩v / p （開關擊穿電壓/氣體壓強）曲線的條件，為實驗中控制和利用該曲線提高氣體火花開關的多脈沖運行能力提供了理論基礎。
  20. On the basis of experiments of breakdown and reliability of pcss, the mechanism of carriers propagating is deeply studied, and the breakdown characteristics and degeneration mechanism are analyzed in the theory

    通過對非線性pcss 』 s載流子輸運機制的深入研究，結合開關的擊穿和壽命實驗，對pcss 』 s擊穿機制及性能退化機理在理論上作了分析。
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