絕緣襯底 的英文怎麼說

中文拼音 [juéyuánchènde]
絕緣襯底 英文
insulating substrate
  • 絕 : Ⅰ動詞（斷絕） cut off; sever Ⅱ形容詞1 （完全沒有了; 窮盡; 凈盡） exhausted; used up; finished 2 ...
  • 緣 : Ⅰ名詞1 （緣故） reason 2 （緣分） predestined relationship 3 （邊） edge; fringe; brink Ⅱ動詞（攀...
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 絕緣 : 1 [電學] （隔斷電流） insulation; isolation; insulate; isolate 2 （跟外界不發生接觸） be cut off ...
  1. A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in fig. 32.

    消除這個問題的一個方法是把器件製造在絕緣襯底的硅島上，如圖32所示。
  2. His hat was bearskin, and his shoes, which were insulated with grass, had bearskin soles and goatskin uppers

    他的帽子是熊皮做的，鞋底也是熊皮，鞋幫鞋面用山羊皮，還襯著草，藉以絕緣。
  3. Specification for insulating materials based on mica - specifications for individual materials - glass - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:單項材料規范.第6節:用b級環氧樹脂粘合劑粘結的玻璃纖維織物襯底雲母紙
  4. Specification for insulating materials based on mica - specifications for individual materials - polyester film - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:單項材料規范.第4節:用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙
  5. Specification for insulating materials based on mica ; part 3 : specifications for individual materials ; sheet 6 : glass - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:單項材料規范.第6活頁:用b級環氧樹脂粘合劑粘結的玻璃纖維織物襯底雲母紙
  6. Specification for insulating materials based on mica. part 3 : specifications for individual materials. sheet 6 : glass - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:專用材料規范.活頁6 :用b級環氧樹脂粘合劑粘結的玻璃纖維織物襯底雲母紙
  7. Specification for insulating materials based on mica ; part 3 : specifications for individual materials ; sheet 4 : polyester film - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:單項材料規范.第4活頁:用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙
  8. Specification for insulating materials based on mica. part 3 : specifications for individual materials. sheet 4 : polyester film - backed mica paper with a b - stage epoxy resin binder

    雲母基絕緣材料規范.第3部分:專用材料規范.活頁4 :用b級環氧樹脂粘合劑粘結的聚酯薄膜襯底雲母紙
  9. Field test procedure for determining the mechanical uplift resistance of insulation adhesives over various substrates

    測定各種襯底上方絕緣膠粘劑抗機械提升力的現場試驗過程
  10. Specification for insulating materials based on mica. part 3 : specificatins for individual materials. sheet 5 : glass - backed mica paper with an epoxy resin binder for post - impregnation

    雲母基絕緣材料規范.第3部分:專用材料規范.活頁5 :用環氧樹脂粘合劑粘結的待浸漬處理的玻璃纖維織物襯底雲母紙
  11. Specification for insulating materials based on mica ; part 3 : specifications for individual materials ; sheet 5 : glass - backed mica paper with an epoxy resin binder for post - impregnation

    雲母基絕緣材料規范.第3部分:單項材料規范.第5活頁:用環氧樹脂粘合劑粘結的待浸漬處理的玻璃纖維織物襯底雲母紙
  12. Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits, and it has become one of major materials in information industry

    液封直拉法生產的半絕緣砷化鎵單晶（ lecsi - gaas ）被廣泛用於微波器件和高頻集成電路的襯底材料，成為當代信息產業的重要材料之一。
  13. The formation of high - density uniform silicon nanocrystals on insulator substrate and their surface morphology

    絕緣襯底上高密度均勻納米硅量子點的形成與表面形貌
  14. Microelectronic circuits in which the passive components and their metallic interconnections are formed directly on an insulating substrate and the active semiconductor devices ( usually in wafer form ) are added subsequently

    一種微電子電路器件，其中的無源元件及內部金屬連線直接在絕緣襯底上形成，然後再加上有源半導體器件（通常以大圓片形式給出） 。
  15. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  16. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
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