緩變折射率 的英文怎麼說
中文拼音 [huǎnbiànzhéshèlǜ]
緩變折射率
英文
graded-index-
The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research
激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構,列陣條寬為4mm ,通過sio _ 2掩膜,歐姆接觸和腔面鍍膜等工藝,實現了閾值電流為2 . 9a ,驅動電流為17 . 5a時輸出功率為20w 。A layer ' s geometric thickness of this kind of photonic crystal is fixed, but another layer ' s thickness is graded
該光子晶體保持其中一折射率層的幾何厚度不變,而另一折射率層的幾何厚度緩慢變化。
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