纖鋅礦結構 的英文怎麼說

中文拼音 [xiānxīnkuàngjiēgòu]
纖鋅礦結構 英文
wurtzite structure
  • 纖 : 纖形容詞（細小） fine; minute
  • 鋅 : 名詞[化學] （金屬元素） zinc （zn）
  • 礦 : 名詞1. （礦床） ore [mineral] deposit 2. （礦石） ore 3. （開采礦物的場所） mine
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. Zinc oxide is a ii - iv wide band - gap ( eg = 3. 37ev ) compound semiconductor with wurtzite crystal structure

    六角纖鋅礦結構的氧化鋅是一種重要的寬帶隙-族半導體材料，室溫下帶隙為3 . 37ev 。
  2. Fe - sem, edx and xrd indicated that the low - dimensional nanomaterials were wurtzite gan

    Fe - sem ， edx和xrd表明三種低維納米結構均為纖維鋅礦gan 。
  3. Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties

    氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶ii - vi族半導體材料，由於其優良的特性，在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。
  4. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  5. The result of the xrd indicated that the production structure was wurtzite, which was mixed with hydrocarbon

    射線衍射結果表明，摻入了碳氫化合物的反應產物的晶須屬六方纖鋅礦結構。
  6. When x 0. 36, the alloy thin films keep the wurtzite structure. and the band gap could be varied from 3. 40 ev to 3. 93 ev. the mg0. 05zn0. 95o and mg0. 15zn0. 85o alloys with wurtzite structure show high thermal stability up to 1000

    研究表明當x的取值小於等於0 . 36時，合金薄膜會保持zno六角形纖鋅礦結構，此時薄膜的能隙寬度可以在3 . 4ev到3 . 93ev之間調節。
  7. Fe - sem, edx, xrd, saed and hrtem indicated that the regular arrays nanorods were wurtzite single crystal gan and the nanorods were tapered from the base to their upper end, which compatible with the theoretical result

    Fe - sem ， edx ， xrd ， saed和hrtem結果表明：規則排列的納米棒是具有六方晶系纖鋅礦結構的gan單晶體，並且從西北工業大學博士學位論文底部到頂部具有塔形形貌，這一現象與理論推導結果一致。
  8. However, when x is 0. 36, phase separation will occur at 800. the intense ultraviolet photoluminescence ( pl ) from mgxzn1 - xo alloy thin film was observed at room temperature. with increasing the contant of mg2 + ion in the film, the peak position is blue - shifted to higher energy side

    從x射線衍射的結果中還可以看到， x = 0 . 36的合金薄膜是一種亞穩態，當熱處理溫度在800以下時它是纖鋅礦結構，而在800以上時就出現了分相。
  9. Zno is a - semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties

    氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶-族半導體材料，由於其優良的物理特性， zno薄膜在太陽能電池、紫外探測器、發光顯示器件、聲表面波器件、氣敏傳感器等方面得到了廣泛的應用。
  10. X - ray diffraction ( xrd ), uv - vis absorption spectroscopy and photoluminescence spectroscopy ( pl ) were employed to study the structural and optical properties of mgxzn1 - xo alloy thin films. the experimental results show that the films were hexagonal wurtzite structure and the band - gap of mgxzn1 - xo alloy thin films gradually increased with increasing mg content. the quality of mgxzn1 - xo alloy thin films can be greatly improved by means of annealing in oxygen ambient

    實驗結果表明，利用溶膠-凝膠法制備的mg _ xzn _ （ 1 - x ） o納米薄膜為六角纖鋅礦結構，粒徑為3 5nm ，隨著mg含量的增加帶隙變寬；通過在氧氣氣氛下退火處理后， mg _ xzn _ （ 1 - x ） o納米薄膜表現出了較好的結構和發光特性，表明熱處理可提高薄膜質量。
  11. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  12. Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices

    利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。
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