缺氧置 的英文怎麼說

中文拼音 [quēyǎngzhì]
缺氧置 英文
oxygen poor stratum
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 置 : 動詞1. （擱; 放） place; put; lay 2. （設立; 布置） set up; establish; arrange; fix up 3. （購置） buy; purchase
  • 缺氧 : anoxia; hypoxia; oxygen deficit; oxygen lack缺氧代謝 anaerobic metabolism; 缺氧環境 oxygen defici...
  1. Role of calcium ion in cerebral hypoxic preconditioning

    在缺氧預處置中鈣離子的作用
  2. Oxygen - deficiency safety device

    缺氧安全裝置
  3. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。
  4. In vitro injury models of brain slice ( ogd and nmda insult ) and primary neuronal cultures ( nmda insult ) oxygen / glucose deprivation ( ogd ) - induced injury of rat hippocampal slice in vitro the rat hippocampal slices prepared were allowed to recover in the normal artificial cerebrospinal fluid ( acsf ) bubbled with gas mixture of 95 % o2 + 5 % co2 for 1 h, then they were thansfered to glucose - free nacsf which was bubbled with gas mixture of 95 % n2 + 5 % co2. after treatment with ogd, the slices were placed into 2 % ttc solution in dark and incubated at 37 * cfor 1h. the slices were weighted and a 50 : 50 mixture of ethanol / dimethyl sulfoxide was then added to extract the formazan in dark for 24 h

    離體腦片損傷模型（ ogd和nmda ）及原代培養神經元nmda損傷大鼠離體海馬腦片缺氧缺糖（ ogd ）損傷大鼠離體海馬腦片制備后，在通氧混合氣的正常腦脊液（ nacsf ）中恢復60min ，然後移入通氮混合氣的無糖腦脊液（吵化sf ）中缺氧缺糖，取出腦片與2 ttc避光37 』 c溫浴60dll ，染色后根據每克濕重加入20ml抽提液（乙醇：二甲亞礬一50 ： 50 ） ，在密閉容器內避光置24h ，測量前搖勻后取200pi至96孔板，在490urn波長，酶標儀測定各孔od值。
  5. The intensity of distinguishable pl peaks increased with the increasing n content in the films, and the central positions of the above two pl bands were influenced by both the content of o and n. it is suggested that these pl were originated from luminescence centers related to si - o and 0 - si - n defects

    分立峰強度隨薄膜中的氮含量增加而升高，熒光帶中心位置受到氧、氮含量的影響，分析表明其熒光起源於si - o和n - si - o等復合缺陷組態能級間的輻射躍遷。
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