耗盡型溝道 的英文怎麼說

中文拼音 [hàojìnxínggōudào]
耗盡型溝道 英文
depletion channel
  • 耗 : Ⅰ動1 （減損; 消耗） consume; cost 2 [方言] （拖延） waste time; dawdle Ⅱ名詞1 （壞的音信或消息） ...
  • 盡 : 盡Ⅰ副詞1 （盡量） to the greatest extent 2 （用在表示方位的詞前面 跟「最」相同） at the furthest ...
  • 溝 : 名詞1 （挖掘的水道或工事） channel; ditch; gutter; trench 2 （淺槽;似溝的窪處） groove; rut; furr...
  • 道 : Ⅰ名詞（道路） road; way; route; path 2 （水流通過的途徑） channel; course 3 （方向; 方法; 道理） ...
  • 耗盡 : exhaust; use up; deplete; exhaustion; depletion; consumption; burning up; impoverishment
  1. Channel depletion mode junction

    溝道耗盡型結
  2. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  4. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  5. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范
  6. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  7. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范
  8. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  9. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  10. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
  11. The optical effect on the uniformity of mesfet threshold voltage is studied. results show that optical radiation enhances the drain - source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction. optical radiation enhances the uniformity of mesfet threshold voltage

    本文研究了光照對閾值電壓均勻性的影響，觀察到在光照條件下，耗盡型mesfet的溝道電流增加，閾值電壓向負方向增加，光照提高了閾值電壓的均勻性。
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