能帶結構 的英文怎麼說

中文拼音 [néngdàijiēgòu]
能帶結構 英文
electric band structure
  • 能 : 能名詞（姓氏） a surname
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. In this thesis, a new finite difference time domain ( fdtd ) method is developed to treat a two - dimensional photonic crystal consisting of nearly - free - electron metals. the method is used to calculate the band structures and investigate defect modes and guide modes in such a photonic crystal

    本論文首先發展了一種基於等離子模型的有限差分計算方法，並應用於二維金屬光子晶體，有效地計算了該類光子晶體的能帶結構。
  2. This key characteristic makes it possible to enhance the photoconductivity properties, and to adjust the spectral response range of devices made by mpc, which leads a bright future for application of phthalocyanines in opto - electronic field

    酞菁金屬配合物的突出特點之一是其能帶結構易於剪裁，可通過不同方法加以改變，從而達到改善器件光電導性能，調整光譜響應范圍等目的。
  3. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  4. In the band structure, one band that is completely filled with electrons is termed valence band

    在能帶結構中，完全填滿電子的帶被稱為價帶。
  5. Analysis on photocatalytic activity and surface energy band structure of ag, nd tio2 nanometer materials

    2納米材料光催化活性及其表面能帶結構分析
  6. In this paper, researches based on one - - dimen - sional photonic cystal and its app1ications are developed. in theory, the finite - - difference time - - domain ( fdtd ) method is re - searched

    在理論工作中，研究了時域有限差分法理論，利用時域有限差分法建立了研究一維光子晶體能帶結構的模型。
  7. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  8. Lastly, we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition, procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature

    最後利用格林函數方法討論了光格子中超冷原子的能帶結構，根據mott相存在能隙的判據我們在平均場近似下重新得到superfluid - mott相變條件，該結論與相關文獻一致。
  9. Due to special crystal structure and energy level structure, tatanlate have high photocatalytic activity for water splitting

    摘要鉭酸鹽光解水催化劑，因其特殊的晶體結構和能帶結構而具有高的光解水活性。
  10. In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet

    本文通過求解自洽薛定諤方程，確定了應變硅mosfet反型層的子能帶結構，在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率，綜合考慮各子能帶上的載流子的濃度分佈，建立了應變硅mosfet載流子遷移率的解析模型。
  11. Influence of strain on subband structure is described by a factor dk, which is the phonon induced band deformation potential extracted from experiment data. in strained si conduction band, the value of dk is 2. 4 times larger than its si counterpart

    在該模型中，應力對子能帶結構的影響通過聲子的形變勢能dk表示， dk為經實驗修正得到的經驗參數，在應變硅導帶中，其值是體硅材料形變勢能的2 . 4倍。
  12. Tio2 film is antibacterial through photocatalysis. the silver doped tio2 film baffle the separate of electron and cavity, change the energy gap ' s framework of tio2, and improve its activity performance of photocatalysis

    二氧化鈦薄膜是光催化抗菌，摻銀二浙江人學幀卜論義氧化鈦薄膜阻止光生電子一光生空穴的分離，改變了tioz的能帶結構，提高了它的光催化活性。
  13. After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate

    運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。
  14. The band structure reveals the form of the impurity levels due to the substitutional impurity in semiconductors

    摻雜模型的能帶結構顯示，由於在半導體母體中進行雜質原子取代而形成了雜質能級。
  15. This structure possesses common spectra gaps with transverse - electric surface waves and transverse - magnetic surface waves, a multiple of in phase frequency regimes to characterize magnetic resonances are also within those spectra gaps, which were detected both by measuring return loss of an antenna near the surface and by fdtd simulations

    實驗和數值模擬顯示這類表面的橫電模式極化和橫磁模式極化的表面波具有多帶隙的豐富能帶結構，同時它還有多個磁性諧振頻率，實驗和理論顯示這些磁性諧振所對應的多個同位相反射區落在兩個表面波帶隙中。
  16. With a broaden and likely direct band gap, porous silicon has a different band structure to that of the bulk silicon. thus the porous silicon can emit at room temperature

    多孔硅改變了體硅的能帶結構，使禁帶展寬，並由間接帶隙向直接帶隙轉變，實現了室溫發光。
  17. The net charge of transition metal atom has decreased as a result of the static effect of lithium ion and effect of energy band of co and ni

    由於鋰離子的靜電作用和鈷、鎳自身能帶結構的影響，過渡金屬的凈電荷減小。
  18. By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism, the structure of the energy band and the crystal potential field

    本文充分利用半導體的能帶理論，從薄膜晶體結構、能帶結構和晶體勢場的角度，分析載流子的遷移、散射以及載流子的產生和晶體結構缺陷對載流子的捕獲。
  19. These interactions varies the band structure of phthalocyanine, accordingly change the absorption spectrum of mpc films

    分子間的相互作用使酞菁能帶結構改變，吸收譜峰產生相應位移。
  20. Topics covered include : crystal lattices, electronic energy band structures, phonon dispersion relatons, effective mass theorem, semiclassical equations of motion, and impurity states in semiconductors, band structure and transport properties of selected semiconductors, and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling

    被覆蓋的論題包括：晶格、電子能帶結構、聲子色散關系、有效質量理論、半經典運動方程和半導體中的非純態、選擇性半導體的帶結構和輸運性質固體量子理論與準費米能級以及用於器件建模的玻爾茲曼輸運理論之間的聯系。
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