能隙 的英文怎麼說

中文拼音 [néngxì]
能隙 英文
band gap
  • 能 : 能名詞（姓氏） a surname
  • 隙 : 名詞1 （縫隙; 裂縫） crack; chink; crevice 2 （空閑） gap; interval 3 （漏洞; 機會） loophole; op...
  1. The indirect optical gaps of ce02 - tioa complex films induce the absorption edges wavelengths red shift so that the films have excellent properties of ultraviolet absorbing

    由於混合薄膜間接躍遷的能隙較小，導致了吸收邊向紅外區遷移，使薄膜有很好的紫外線吸收功能。
  2. After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged

    相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后，薄膜的平均透過率和平均反射率都比退火前下降，光學能隙變大。
  3. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  4. Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology

    硅是微電子器件的主要材料，但硅的間接能隙特性嚴重製約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發光材料，就可利用已有成熟的硅集成技術發展硅光電子集成，從而有可能完全改變信息技術的面貌。
  5. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  6. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  7. Lastly, we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition, procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature

    最後利用格林函數方法討論了光格子中超冷原子的能帶結構，根據mott相存在能隙的判據我們在平均場近似下重新得到superfluid - mott相變條件，該結論與相關文獻一致。
  8. Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, aln thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super - large scale integrated circuits, insulating layers or passivation layers for semiconductor

    超薄鋁膜由於其特殊的的光學性質，在光學多層膜上有廣泛應用。氮化鋁薄膜化學穩定性高、熱傳導率高、機械強度高、電絕緣性能佳、高能隙、熱膨脹系數低，光學特性優良，可以用作大功率的紫外光學器件的散熱材料。
  9. Pseudogap effect on the transport in copper oxide materials

    氧化物材料中贗能隙對輸運性質的影響
  10. In photodetectors the wavelength response is not uniform at all wavelengths, but a threshold energy exists, determined by the semiconductor energy gap between bound and free carriers.

    光子探測器對不同波長的分光響應是不同的，但是存在一個由束縛和自由載流子之間的半導體能隙所確定的能閾。
  11. And it is also found that the gap absorption peak and the parameter are independent of the length of the ptcl complex

    同時，考察得出能隙吸收主峰和參數無鏈長依賴性的結論。
  12. In the chapter five, we study the quasi particle excitation energy spectrum and corresponding energy gap in ferromagnetic ( 1 / 2, 1 ) tow - leg heisenberg ladder system

    準一維磁性系統熱力學性質的研究摘要第五章中，我們研究了亞鐵磁雙鏈ow legheisenbergladder ）系統中的元激發譜和能隙。
  13. So, we fit the specific heat of its superconducting state by two - gap model, and get the magnitude and relative proportion of the two gaps

    我們用二能隙模型對mgb2的超導態電子比熱擬合，分別得到了兩個能隙的大小和所佔比例。
  14. Pseudo gap 7

    因此只具有虛能隙
  15. Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x

    採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。
  16. This indicates the existence of the second energy gap

    這預示著第二個超導能隙的出現。
  17. When x 0. 36, the alloy thin films keep the wurtzite structure. and the band gap could be varied from 3. 40 ev to 3. 93 ev. the mg0. 05zn0. 95o and mg0. 15zn0. 85o alloys with wurtzite structure show high thermal stability up to 1000

    研究表明當x的取值小於等於0 . 36時，合金薄膜會保持zno六角形纖鋅礦結構，此時薄膜的能隙寬度可以在3 . 4ev到3 . 93ev之間調節。
  18. We put our emphases on four sections : the opening of the energy gap and its effects on the thermodynamic properties in low temperature, quantum fluctuation and the hidden long - distance order parameters, the magnetization and the specific heat properties under the extern magnetic field of the ferromagnetic chain, and the energy spectrum of the ferromagnetic ladder

    著重研究在一維量子自旋系統中的能隙的打開、以及能隙對系統熱力學性質的影響；量子漲落和系統隱含的序參量；亞鐵磁的在外場下的磁化性質以及比熱性質；和亞鐵磁雙鏈系統中的能譜。
  19. An interesting proposal for using mid - gap levels to improve device performance ( see also the next reference

    一篇使用中能隙能階提升元件性能的有趣方法（亦見下一篇參考論文） 。
  20. The method and some simple and important results are presented. in the second chapter, we study the ground state energy gap and the spin - peierls phase transition in the quasi one - dimensional spin = l / 2 dimerized anti - ferromagnetic single chain

    第二章中，我們研究準一維自旋s = 1 / 2的二聚化反鐵磁單鏈的基態能隙和低溫下的spin - peierls相變。
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