脈動發射電流 的英文怎麼說
中文拼音 [màidòngfāshèdiànliú]
脈動發射電流
英文
pulsed emission current- 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
- 發 : 名詞（頭發） hair
- 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
- 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
- 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
- 脈動 : [物理學] [天文學] pulsation; pulsing; pulse; ripple; impulsive motion; pulsating; panting; loping...
- 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
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We found the " forward stimulated raman scattering " will be excited if the pulse length is greater than plasma wave length. the " forward stimulation raman scattering " decreases the phase velocity and the amplitude of the wake wave which will lead to the reduction of maximum kinetic energy of the electrons trapped
結論是：當脈沖長度接近等離子體波長時，稀薄等離子體將發生「前向受激raman散射」 ，它使脈沖后沿拉長，導致尾流場的相速度變小，以至於被尾流場「捕獲」的電子最大動能大大下降。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。The engine is tested on the dynometer using the software that can monitor the ecu ( electronic control unit ) internal dataflow. and the electronic control fuel injection system parameters ( e. g. position of throttle valve, engine speed, air temperature, engine temperature, duration of injection ) are acquired at many different working conditions of engine
本文以hirth3203二沖程汽油發動機為研究對象，利用開發的ecu內部動態數據流監測軟體進行發動機臺架試驗，獲取了在不同的油門開度和轉速下電控燃油噴射系統的一系列工作參數，如節氣門開度、發動機轉速、進氣溫度、氣缸溫度、蓄電池電壓以及噴油脈寬。
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