脈沖增壓 的英文怎麼說

中文拼音 [màichōngzēng]
脈沖增壓 英文
pulse pressure-charging
  • : 脈名詞1. (動脈和靜脈的統稱) arteries and veins2. (脈搏的簡稱) pulse 3. (像血管的組織; 連貫成系統的東西) vein
  • : 壓構詞成分。
  1. The second, at the high frequency primary coil, when switch turn on with control signal ( the spwm pulse is modulated ), in the positive or negative semi - period of low frequency modulation signal, transformer coil with same direction voltage. the magnetic flux of transformer core will increase step by step. at the end, it leads to magnetic flux saturation

    二、在高頻變器原邊,當開關管接收控制信號列(經調制的spwm波列)導通時,在低頻調制信號的正半周或負半周內,施加在變器繞組上的是同一方向的電,變器磁芯中的磁通可能將級進地逐漸加,導致磁芯飽和,造成磁偏或單向磁化,導致低頻電信號放大失真或由於很大的磁化電流而無法正常工作。
  2. Two stroke engine supercharged on pulse series parallel system

    串並聯系統式二程發動機
  3. Two stroke engine supercharged according to pulse parallel system

    並聯系統式二程發動機
  4. Modular pulse converter supercharging

    模組轉換
  5. A design adding a dc chopper after the triphase rectification was given to reduce the peak of the pulse of voltage, aiming at the characteristics that the magnitude of the rated voltage of permanent magnet synchronous motor ( pmsm ) is far below that of the power supply, also the electric parameters of the devices were given

    針對專用永磁同步電機額定電大大低於電網電這一特點,為降低電機上承受的峰值,設計了在三相整流之後加一級直流斬波器並給出了相應的電氣參數。
  6. All analysis and simulations results indicate several methods improving the insulation recovery of spark gap switch : ( 1 ) using the gas with good thermal conductivity, such as h2 and sf6 ; ( 2 ) using the gas flow ; ( 3 ) utilizing the v / p cure ; ( 4 ) modifying the geometry and size of the electrode ; ( 5 ) using the gas with good electronegativity, such as sf6. some experiments on the multi - pulse operation of high power spark gap switch are carried out. the insulation recoveries of switch without and with gas flow are both investigated

    結合理論分析和模擬結果,提出了氣體火花開關多運行特性可採用如下方法: ( 1 )使用導熱性能好的氣體,如h2 、 sf6等; ( 2 )採用吹氣的方法; ( 3 )大氣,在電極表面加細小結構,構造平穩的v / p曲線; ( 4 )改良開關電極結構和尺寸,採用奶頭-半球結構的電極; ( 5 )使用電負性強的氣體作為開關絕緣氣體,如sf6 。
  7. In this step, first calculate the impulse press with the different triers, find out the influence of triers to the impulse press. then calculate the impulse press with the different pipeline system, hydraulic accumulator, supercharger and oil viscosity. at last, show the result in the forms of chart, also show the main character of the press curve

    最後根據相應的數學模型進行模擬計算,先計算被試件在不同規格參數的條件下的力響應結果,總結出被試件對力波形的影響;再計算管道系統、蓄能器、器和油液的粘度在不同參數的條件下對力波形的影響,以圖形的形式表示,並給出力波形主要特徵的計算結果。
  8. Effects of gas switch on power gain in pulse compressed system

    縮系統中氣體開關對功率益的影響
  9. The shorter the interval between the two pulses of the current wave, the fewer strikes the varistors can endure. at the same time, the dc ljima changes fast - slowly - fast alone with the experiment continuing. microstructual disorder, such as variations in the height of the electrostatic potential at grain boundaries and electrode protrusions into the zinc oxide varistors, causes substantial temperature rise in a microscopic region around the defect and is the source for failure

    雷電的多重閃擊對雷電過電保護器件的影響更加嚴重,本文首次採用不同間歇時間雙電流擊對氧化鋅電阻進行了多次試驗,試驗表明:氧化鋅電阻在雙電流擊下更容易出現老化破壞現象,間歇時間越短,電阻能耐受的擊次數越少;此外,直流u _ ( 1ma )值隨擊次數的加具有快一慢一快的下降過程。
  10. In order to restrain the bad effects of noise and improve the defect detecting ability of pt, image reconstruction methods based on logarithm polynomial regression were carried out here to reconstruct and enhance pt image sequences of carbon fibre reinforced plastic ( cfrp ) laminates

    為了抑制各種噪聲的不良影響,提高熱像檢測的缺陷探測能力,運用基於對數多項式回歸的圖像重建方法對碳纖維強塑料層熱像檢測的熱像序列進行圖像重建與強。
  11. Design high frequency to increase voitage and pulse heat to strike arc, so with fine ability to start arc. so with fine ability to start arc. welding current is sufficient

    採用高頻引弧及熱引弧設計,起弧性能極佳,焊流電流充足,卓越的性能價格比。
  12. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入輝光放電等離子體強pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。
  13. The results show that wavelength locates in gain zone of semiconductor optical amplifier, and have higher peak power and proper time delay between the two pulses for the second order super gauss control pulse in semiconductor optical amplifier. a high quality amplified signal pulse can be achieved. the chirp can be reduced notability by using cascading soa in cross gain modulation based on soa, and the distance and the peak power of conversion optical pulse can be increased notability, and we can let down the demand for wavelength based on xgm in soa and enhance the flexibility of wavelength conversion

    我們應用二階超高斯光與高斯信號同時注入soa和應用soa與非線性光學環鏡( nolm )相結合的方案來對信號進行縮整形,模擬顯示,在調節系統合適參數的情況下,波長位於soa益區的二階超高斯控制光在具有較高的峰值功率和適當時延下輸入soa時,最後可以得到放大的高質量超簡訊號光;在基於soa的交叉益調制( xgm )全光波長轉換中,採用級聯的soa能有效地使反轉光的頻率啁啾得到有效降低,波長向下轉換的距離和反轉光的峰值能量都得到明顯提高,降低了利用交叉益調制( xgm )波長轉換中對波長精度的要求,從而提高了波長轉換的靈和性。
  14. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明, gaasmesfet的擊穿電隨柵極與漏極上所加寬度的大而大,這主要是因為表面態的原因。
  15. The effect of various gain coefficient on soliton - effect picosecond pulse compression in fibers with slowly decreasing dispersion

    色散緩變光纖中益系數的取值對皮秒孤子效應縮的影響
  16. The propagating characteristics of femtosecond pulse in this type of nolm are also investigated. the result shows that the optical switching is valid only under certain condition for femtosecond pulse due to the higher - order dispersions and nonlinear effects, especially the stimulated raman scattering ( srs ). moreover, analysis of the higher - order effects shows that srs enhances the pulse compression in some conditions

    研究結果表明,由於受到高階色散及高階非線性效應的影響,特別是在受激拉曼自散射效應的影響下, nolm的開光特性只在一定條件下存在;並且通過對高階效應的分析比較,發現受激拉曼散射在一定條件下強了飛秒縮。
  17. The method permits the calculation of the three stages of shock wave evolution, and gives the temporal and spatial relationship of peak pressure, velocity, and profile of shock wave

    文中採用流體動力學模型,解析地描述了強激光輻照靶材時,激波的產生及強、維持和衰減規律,給出了激波峰值力、激波速度、激波波形的時空關系。
  18. The common detector output pulse signal scope is several dozens millivolts, but the multichannel pulse analyzer input pulse amplitude request is 1 - 15v, therefore the pulse linear amplifier must have the certain voltage gain, about ten times to several times

    一般探測器輸出信號幅度為幾十毫伏,而多道幅度分析器輸入幅度要求為1 - 10v ,所以線性放大器必須具有一定的電放大益,為數倍到上百倍。
  19. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏輔助射頻等離子體激光沉積( rf - pepld )方法在常溫下( 25 )制備立方氮化硼( c - bn )薄膜,初步研究了薄膜沉積參數:激光能量密度、射頻功率、基底負偏和鍍膜時間對立方氮化硼薄膜生長的影響,並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  20. Pultruded fibre reinforced plastics

    強式纖維塑料
分享友人