脈沖底 的英文怎麼說

Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target

本文研究用脈沖激光燒蝕石墨靶方法在單晶硅、 k9玻璃等襯底上生長超硬非晶碳膜。

The background count of the detector is 4～6 counts 1 min.

探測器的本底計數率為46脈沖1分。

The feasibility and some advantages of employment of sil have been discussed. the numerical aperture are calculated when laser pulse is defocusing. in contrast with traditional microscopy objective, the employment of solid immersion lens can effectively increase the numerical aperture of the recording system ; thereby it can increase the volumetric density and decrease the demand of the incident laser power

當脈沖聚焦點相對于固體浸沒透鏡底面離焦時，對系統的有效數值孔徑進行了計算，結果表明採用固體浸沒透鏡離焦的方式進行記錄，系統的有效數值孔徑最低可增大到固體浸沒透鏡插入前的折射率倍，其數值孔徑的理論極限值為存儲介質的折射率。

October 16, 2007 ( chicago ) ? treatment of basal cell carcinoma ( bcc ) with the pulsed dye laser may be an effective alternative to mohs micrographic surgery if the diameter of the lesion is less than 1. 5 cm, according to a study presented at the american society for dermatologic surgery ( asds ) 34th annual meeting

2007年10月17日? ?根據美國皮膚外科學會第34屆年會公布的一個研究結果，當損傷范圍直徑小於1 . 5厘米的時候，利用脈沖機關治療基底細胞癌的方法對于傳統的顯微外科是一個有效的替代選擇。

With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。

The background count of the detector is 4 6 counts 1 min

探測器的本底計數率為4 6脈沖1分。

Low background pulse counting assembly

低本底脈沖計數裝置

When the energy converters and the thickness of the steel plate are settled, the attenuation speed of the repetitious pulse reflected wave from the underside is only related to the reflectivity of the reinforced concrete interface

在鋼板厚度和換能器確定的情況下，多次脈沖底面反射波的衰減速度只與鋼-混凝土界面的反射率有關。

The bst thin film grown on porous silicon substrate has been investigated for the first time. experiment results indicate that the porosity of porous silic

探索碩究了用脈沖檄光沉積的方法在多孔硅襯底上制備bst薄膜。

In the third section, i. e. chapter five, the normal raman spectra of nil2, cul2, pdl2 powder are studied under the excitation of laser with the wavelength of 632. 8nm and aqueous silver colloid is prepared by pulsed laser ablation, from which the surface enhanced raman spectra of the three compounds are obtained. after preliminary assignment, the identical and different features of vibration of the compounds due to the different central metal atoms are analyzed

第三部分，即論文的第五章，我們以632 . 8nln為激發波長研究了nilz 、 culz和pdl :三種新型金屬有機化合物粉末的正常拉曼光譜，並且以脈沖激光刻蝕法制備了水銀膠，以其為襯底研究了三種化合物溶液在其上的表面增強拉曼光譜，通過對其拉曼光譜進行了初步指認，了解由於中心原子的不同，三種金屬有機化合物分子振動的相同和區別。

Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響

The new requirements for applications in material surface engineering urge a new type of hipib apparatus, for instance, the generation of medium - power - density ion beam, high - stability ion beams and long - lifetime ion source etc. therefore, characterization of high power ion diode - magnetically insulated ion diode ( mid ), the key issue for the technique development, is considered in this dissertation. the investigations of hipib generation and its mechanisms have been carried out in a temp - 6 hipib apparatus, in order to optimize the configuration of ion diode and its ion beam parameters for materials surface treatments

針對強流脈沖離子束（ hipib ）技術研發的關鍵環節?高功率離子二極體（磁絕緣離子二極體）的工作特性，在temp - 6型hipib裝置上開展了hipib產生及其形成機理的實驗研究，確定了優化的離子二極體結構和輻照工藝參數；通過hipib輻照金屬材料燒蝕行為的系統研究，揭示了燒蝕表面形貌的形成規律，為徹底弄清hipib與材料相互作用機理提供了實驗依據。

The transient temperature fields generated by a pulsed laser in hollow cylindrical film - substrate system are studied by using the finite element method, after considering the temperature dependence of the thermo - physical parameters of the materials

摘要基於材料的熱物理參數隨溫度的變化，用有限元方法對脈沖激光作用於薄膜基底式雙層管狀材料時產生的溫升進行了數值計算。

Moreover because the detector output pulse signal base is very broad, its scope has a long tail, it can not adapt to request of the multichannel pulse amplitude analyzer

另外由於探測器輸出脈沖信號底部較寬，脫尾嚴重，不能滿足多道脈沖幅度分析器的要求。

The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。

In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。

A uniform state ion chamber with double layers has been developed for distinct measurement in various n + y mixed fields in the fast neutron reactor. the cavity material is 6lif + 7lif. the inner wall material is 6lif and the outer wall material is 7lif

根據let效應因子的測量結果和快中子堆y譜、中子譜等基本資料，以及~ 6lif和~ 7lif對中子響應靈敏度有較大差異這一特點，研製了以~ 6lif + ~ 7lif為空腔、 ~ 6lif為外壁、 ~ 7lif為內壁的具有雙層室壁結構的均勻固體電離室，並將其用於快中子脈沖堆n 、混合場區分測量，徹底剔除了熱中子的干擾。

It is found from the experiment that under the conditions of peak magnetic field of 0. 57t, beam pulse fwhm ( full width of half maximum ) of 44ns, a microwave radiation pulse with fwhm 25ns and whole width of 35ns is produced, when the intensity of the guiding magnetic field rises, the peak microwave power changes little but the width of the pulse reduces. the a - k gap also has obvious influence on the microwave radiation, the stable and higher microwave output is obtained under suitable gap

實驗中還發現，在峰值磁場0 . 57t和束流半高寬44ns情況下，得到了25ns半高寬和35ns底寬的微波脈沖信號，隨著導引磁場增加，微波信號幅值基本不變，但國防科學技術大學研究生院學位論文是微波脈沖寬度會逐步減少;實驗中還發現磁場線圈位置有一定的軸向調節范圍，說明在磁場軸向分佈的一定變化范圍內，器件都可以正常工作，這對以後的永磁場系統導引的微波實驗有利。

The background of neutron is rejected by the technique of pulse shape discrimination

用脈沖形狀甄別技術去除中子本底。

So the application prospects of linbo _ 3 integrated optic intensity modulators are getting better. two - section cascaded ln intensity modulator applied to laser pulse rectification is presented in this thesis. it is constituted with two - section m - z optical waveguide and cpw traveling - wave modulation electrode

本課題旨在研究以linbo _ 3為襯底材料、以兩級串聯m - z干涉型光波導結構為基礎、以cpw行波電極為調制電極、用於核爆模擬領域激光脈沖整形的集成光學強度調制器。