脈率與脈律 的英文怎麼說
中文拼音 [màilǜyǔmàilǜ]
脈率與脈律
英文
rate and rhythm of pulse-
1 m 0. 5, the phase - shifted angle 6 is controlled in term of sine law which makes the magnitude of resonant voltage track a reference sine voltage, and the resonant voltage is rectified, filtered, inverted and then the better sine - voltage output is obtained, theoretical analysis and experimental results show that for the resistive load and inductive load, the switches of leading leg of the phase - shift - controlled circuit are always turned on at zvs, and ones of lagging leg are turned on at zvs ( < 0 ) or turned off at zcs ( ( > 0 ), moreover, all switches in the low - frequency inverter are always turned on and off at zvs, the measured circuit efficiency for rated load reaches up to 88 %
從功率單向流動角度出發，提出了一種lcc諧振型恆頻移相單相高頻鏈逆變電路拓撲，在調制系數0 . 1 m 0 . 5情況下，控制移相角按正弦規律變化，使諧振電壓脈沖列的幅值追蹤參考正弦電壓信號，經過整流、濾波、低頻逆變，從而獲得正弦度較好的輸出電壓。理論分析和實驗結果證明對于阻性負載或阻感性負載，移相全橋具有超前橋臂零電壓開通，滯后橋臂或者零電壓開通（ _ 0 ）或者零電流關斷（ _ 0 ）的軟開關特性，而低頻逆變器的各個開關均實現零電壓條件下的開通與關斷。Objective to evaluate the efficacy of intravenous esmolol and diltiazem for controlling rapid atrial arrhythmias
摘要目的觀察並比較靜脈注射艾司洛爾與地爾硫（艸卓）控制快速房性心律失常心室率的有效性。The new requirements for applications in material surface engineering urge a new type of hipib apparatus, for instance, the generation of medium - power - density ion beam, high - stability ion beams and long - lifetime ion source etc. therefore, characterization of high power ion diode - magnetically insulated ion diode ( mid ), the key issue for the technique development, is considered in this dissertation. the investigations of hipib generation and its mechanisms have been carried out in a temp - 6 hipib apparatus, in order to optimize the configuration of ion diode and its ion beam parameters for materials surface treatments
針對強流脈沖離子束（ hipib ）技術研發的關鍵環節?高功率離子二極體（磁絕緣離子二極體）的工作特性，在temp - 6型hipib裝置上開展了hipib產生及其形成機理的實驗研究，確定了優化的離子二極體結構和輻照工藝參數；通過hipib輻照金屬材料燒蝕行為的系統研究，揭示了燒蝕表面形貌的形成規律，為徹底弄清hipib與材料相互作用機理提供了實驗依據。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。They pointed out that modulation wave fronts ( such as those in the front of a light pulse ) in a negative index material are aligned the same way as they are in a positive index material ? anything else would violate basic causality and require parts of the wave to travel with infinite velocity
他們指出在負折射率材料中調制波前（例如光脈沖前端的波前）的方向，與在正折射率材料中相同；若非如此，就會違反基本因果律，且部份波的前進速度將成為無限大。分享友人